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Renesas 71V67603S133BQI
- Part No.:
- 71V67603S133BQI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67603S133BQI.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 165CABGA
- Quantity:
- Payment:
- Shipping:
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Product details
Overview
71V67603S133BQI from IDT (Integrated Device Technology) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports interleaved/linear burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW4), and operates across industrial temperature range (−40°C to +85°C). It is used in high-speed networking buffers and cache subsystems requiring deterministic timing.
For engineers reviewing the 71V67603S133BQI datasheet, 71V67603S133BQI pinout, 71V67603S133BQI application, or 71V67603S133BQI equivalent, this page delivers verified memory architecture details, burst timing behavior, power-down sequencing, JEDEC-standard TQFP-100 package mapping, and real-world substitution guidance for synchronous SRAM selection in embedded telecom and datacom systems.
Technical Context
The 71V67603S133BQI implements a synchronous, clock-driven interface with registered address, data, and control inputs-all sampled on the rising edge of CLK. Its internal burst counter generates four consecutive addresses from a single external address, with sequence order determined by the static LBO pin state (linear vs. interleaved).
Burst reads deliver pipelined output data: first word appears after one clock cycle; subsequent words align to successive rising edges. Write operations support self-timed execution using GW (global) or BWx (byte-select) enables, with asynchronous ZZ input enabling full sleep mode (IZZ ≤ 70 µA) and asynchronous OE controlling output drivers.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit configuration via address remapping |
| Clock Frequency / Access Time | 133MHz max; 4.2ns clock-to-data (tCD) - defines minimum system clock period for guaranteed read timing |
| Supply Voltages | VDD = 3.3V ±5% (core); VDDQ = 3.3V ±5% (I/O) - requires separate low-noise regulation for signal integrity |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence - determines cache line traversal pattern in processor interfaces |
| Power-Down Capability | ZZ input asserts full sleep mode (IZZ ≤ 70 µA at +85°C); retains data without external refresh |
| Timing Interface | Pipelined outputs with single-cycle deselect - eliminates bus turnaround delay during rapid chip enable toggling |
| Operating Temperature | −40°C to +85°C (industrial grade) - validated for base station, router, and industrial controller environments |
Pinout & Package
71V67603S133BQI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pin 1 marked via corner notch; pin 14 (VDD/NC) may be tied to VDD or left unconnected; pin 64 (ZZ) must be actively driven HIGH for sleep mode or pulled to VSS for active operation.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous inputs latched on rising CLK edge when ADSP or ADSC is asserted; A0/A1 define burst word offset |
| CLK | System Clock Input | Primary timing reference; all synchronous operations (read/write/burst advance) are edge-triggered on rising edge |
| ADSP / ADSC | Address Status Inputs | ADSP (processor) and ADSC (cache controller) load address register; ADSP gated by CE, ADSC independent |
| ADV | Burst Address Advance | Active-LOW signal that increments internal burst counter; held HIGH to suspend burst sequence |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE enables byte-write logic; BW1–BW4 select individual 9-bit bytes (I/O0–7/I/OP1, etc.) |
| OE | Output Enable | Asynchronous control of I/O drivers; LOW enables outputs, HIGH places pins in high-Z - critical for bus sharing |
| LBO | Burst Order Select | Static input defining burst sequence: LOW = linear (00→01→10→11), HIGH = interleaved (00→01→11→10) |
| ZZ | Sleep Mode Input | Asynchronous HIGH activates full sleep mode; internally pulled to VSS if floating - must be externally driven |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered input/output paths ensure setup/hold compliance at 133MHz |
| VDD / VDDQ / VSS | Power Supplies | VDD (core), VDDQ (I/O), and VSS (ground) require local decoupling; VDDQ separation prevents I/O noise coupling into core logic |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Burst Outputs | Delivers four consecutive data words over four clock cycles with 1-cycle pipeline latency - eliminates wait states in high-throughput data paths |
| Single-Cycle Deselect | Chip deactivation completes within one CLK cycle - enables rapid bank switching and multi-SRAM arbitration without bus contention |
| Self-Timed Write Cycle | Internal timing logic resolves write completion without external strobes - simplifies controller design and improves timing margin |
| Byte-Write Granularity | Four independent 9-bit write enables (BW1–BW4) allow partial writes without read-modify-write - essential for protocol header updates |
| Configurable Burst Order | LBO pin selects linear or interleaved addressing - matches CPU/cache controller burst patterns without firmware reconfiguration |
| Low-Power Sleep Mode | Full retention at IZZ ≤ 70 µA (industrial temp); ZZ input bypasses clock tree and disables all I/O drivers - ideal for power-gated subsystems |
Applications
| Network Packet Buffer | Processor Cache Tag RAM |
|---|---|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer supporting 133MHz burst reads aligned to packet arrival rate. Use Value: Pipelined outputs deliver four header words per burst without inter-cycle gaps, increasing effective throughput by 30% vs. non-pipelined SRAM. |
Use Scenario: Holding cache tag entries and status bits for L1/L2 instruction/data caches in RISC-based controllers. IC Role / Device Role / Timing Role: Synchronous tag RAM interfaced directly to cache controller with single-cycle deselect for rapid tag lookup and replacement. Use Value: 4.2ns tCD and single-cycle deselect reduce cache miss penalty by up to 2.5ns per access versus comparable async SRAMs. |
| Industrial PLC Data Log Buffer | Baseband Modem Symbol FIFO |
Use Scenario: Temporarily storing sensor acquisition timestamps and values in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Industrial-grade SRAM retaining data during brownouts; ZZ-controlled sleep preserves logs during standby. Use Value: −40°C to +85°C rating and 70µA sleep current ensure reliable logging in uncontrolled cabinet environments over 10+ years. |
Use Scenario: Acting as symbol-level FIFO between digital front-end and modulation engine in LTE/5G small cell baseband processors. IC Role / Device Role / Timing Role: Synchronous FIFO with burst write capability accepting 4-symbol chunks from channel estimator. Use Value: Byte-write enables (BW1–BW4) allow partial symbol updates without corrupting adjacent symbols - critical for adaptive modulation schemes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-133BZXI | Same 256K×36 organization, 133MHz, TQFP-100; but uses different burst counter logic and lacks ADSC input | Requires redesign of cache controller interface due to missing ADSC pin; not drop-in for IDT71V67603S133BQI-based designs | Select only when ADSC functionality is unused and layout allows pinout adaptation |
| AS7C3256B-133JCIN | 256K×32 organization (32-bit bus); no byte-write enables (BWx), no LBO, and no ADSP/ADSC dual-address-status support | Cannot support 36-bit data path or processor/cache dual-interface topology; limited to simpler controller architectures | Consider only for cost-sensitive, non-burst, 32-bit-only applications where feature reduction is acceptable |
Compared with CY7C1362BV33-133BZXI and AS7C3256B-133JCIN, the 71V67603S133BQI uniquely integrates dual-address-status inputs (ADSP/ADSC), configurable burst order (LBO), and granular byte-write control - making it irreplaceable in high-performance cache and packet-processing subsystems requiring precise timing and flexible interface mapping.
Availability
71V67603S133BQI is available at Aetrix Electronics and suitable for network packet buffering, processor cache tag storage, industrial data logging, and baseband symbol FIFO applications requiring stable component supply and long-term industrial temperature support.
Supply support for 71V67603S133BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) was a fabless semiconductor company specializing in high-performance timing, memory, and interface ICs, acquired by Renesas Electronics in 2019. Its legacy SRAM portfolio remains widely deployed in infrastructure equipment.
The 71V67603S133BQI belongs to IDT's 71V67xx family of pipelined synchronous SRAMs, designed specifically for cache, buffer, and FIFO applications in telecom, networking, and industrial control systems demanding deterministic 133MHz+ timing and low-power sleep modes.
FAQ
What is the maximum operating frequency and corresponding access time for the 71V67603S133BQI?
The 71V67603S133BQI is rated for 133MHz operation with a clock-to-data access time (tCD) of 4.2ns. This specification is guaranteed across the full industrial temperature range (−40°C to +85°C) and under worst-case voltage conditions (VDD = 3.135V). The device also supports lower-speed 150MHz (3.8ns) and 166MHz (3.5ns) variants, but the 'S133' suffix confirms this unit is optimized and tested for 133MHz timing.
Does the 71V67603S133BQI support both linear and interleaved burst modes, and how is the mode selected?
Yes, the 71V67603S133BQI supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the device executes linear burst order (00→01→10→11); when driven HIGH, it executes interleaved order (00→01→11→10). LBO is a static input and must remain stable during burst operation - changing it mid-burst causes undefined address sequencing.
How does the 71V67603S133BQI handle power-down and data retention?
The 71V67603S133BQI enters full sleep mode when the ZZ pin is driven HIGH, reducing supply current to ≤70 µA at +85°C while retaining all stored data. In this state, the internal clock tree is gated, and all I/O drivers enter high-Z. Data retention is guaranteed across the full industrial temperature range without external refresh. Upon ZZ return to LOW, the device resumes normal operation after tZZR (100ns recovery time).
What are the key differences between the 71V67603S133BQI and the 71V67803 variant?
The 71V67603S133BQI is configured as 256K × 36-bit, while the 71V67803 is 512K × 18-bit - same density, different bus width. Critically, BW3 and BW4 are not applicable on the 71V67803 (per datasheet note), and its pinout differs in address and I/O allocation. The 71V67603S133BQI supports full 36-bit byte-write granularity; the 71V67803 supports only two 9-bit bytes (BW1/BW2), making them functionally distinct and not interchangeable without hardware redesign.
Can the 71V67603S133BQI be used in a 512K × 18-bit configuration, and what changes are required?
Yes, the 71V67603S133BQI supports 512K × 18-bit operation via internal address remapping - A18 becomes the MSB, and the 36-bit data bus is split into two 18-bit halves. However, this requires external address decoding to route A18 appropriately and software/firmware awareness of the narrower data path. Pin configurations differ between modes (e.g., some pins become NC in 512K×18 mode), so PCB layout must accommodate both or be dedicated to one configuration.
71V67603S133BQI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 133 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 4.2 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67603S133BQI FAQ
1.How can I place an order for 71V67603S133BQI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67603S133BQI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67603S133BQI reliable?
The price and inventory of 71V67603S133BQI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S133BQI is usually 5 days.
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5.How can I obtain technical support or documentation for 71V67603S133BQI?
For technical support, including 71V67603S133BQI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S133BQI requirements.
6.How does Aetrix verify that 71V67603S133BQI is sourced from the original manufacturer or authorized distributors?
All 71V67603S133BQI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S133BQI meets industry standards.
7.What is the process for return or replacement of 71V67603S133BQI?
All 71V67603S133BQI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S133BQI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67603S133BQI part is unused and in its original packaging.
Return procedure for 71V67603S133BQI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67603S133BQI Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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