Renesas 71V67603S133BQI8

Overview

71V67603S133BQI8 from IDT (Integrated Device Technology) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports interleaved/linear burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW4), and operates across industrial temperature range (−40°C to +85°C). It is used in high-speed networking line cards requiring low-latency, burst-capable memory buffering.

For engineers reviewing the 71V67603S133BQI8 datasheet, 71V67603S133BQI8 pinout, 71V67603S133BQI8 application, or 71V67603S133BQI8 equivalent, key selection criteria include burst timing compliance at 133MHz, TQFP-100 package compatibility, 3.3V core/I/O supply requirements, and support for pipelined read/write cycles with ZZ sleep mode.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter-gated by ADV and configured by LBO-generates four consecutive addresses per initial access, enabling efficient cache-line transfers in processor or ASIC interfaces.

The device integrates self-timed write logic triggered by GW or BWE/BWx, with asynchronous OE and ZZ controls. Pipelined output registers deliver first data on the second clock edge after address assertion, while single-cycle deselect ensures rapid bus release without pipeline stalls.

Key Specifications

Pinout & Package

71V67603S133BQI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pinout matches PKG100 configuration for 256K × 36 organization as documented in IDT datasheet revision 6.42.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C33256P-133JCIN, the 71V67603S133BQI8 uniquely combines industrial temperature rating, integrated 4-bit parity (I/OP1–I/OP4), and dual-burst-mode flexibility - making it the only option qualified for carrier-grade networking hardware requiring both robustness and data integrity.

Availability

71V67603S133BQI8 is available at Aetrix Electronics and suitable for high-speed packet buffering, network processor interface, telecom baseband processing, and industrial PLC data logging requiring stable component supply and long-term lifecycle assurance.

Supply support for 71V67603S133BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V67603S133BQI8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking, telecom, and industrial control applications.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67603S133BQI8?

The 71V67603S133BQI8 is rated for 133MHz operation with a guaranteed clock-to-data access time (tCD) of 4.2ns. This specification applies across the full industrial temperature range (−40°C to +85°C) and under worst-case VDD/VDDQ conditions (3.135V to 3.465V). The device also supports 150MHz (3.8ns) and 166MHz (3.5ns) variants, but the 71V67603S133BQI8 is specifically characterized and screened for 133MHz performance.

Does the 71V67603S133BQI8 support both linear and interleaved burst modes, and how is this selected?

Yes, the 71V67603S133BQI8 supports both linear and interleaved burst modes via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the device uses linear burst ordering; when driven HIGH, it uses interleaved burst ordering. LBO is a static input and must remain stable during operation - it is sampled at power-up and during reset, and changing it mid-operation may cause undefined burst behavior.

What are the power supply requirements for the 71V67603S133BQI8, and are VDD and VDDQ independent?

The 71V67603S133BQI8 requires two independent 3.3V supplies: VDD (core logic, 3.3V ±5%) and VDDQ (I/O drivers, 3.3V ±5%). They may be supplied from the same regulator but must be decoupled separately per datasheet recommendations. VDD powers internal registers and control logic; VDDQ powers the output buffers and input receivers - allowing I/O voltage domain isolation in mixed-voltage systems.

How does the ZZ (Sleep Mode) input function, and what is its effect on data retention?

The ZZ input places the 71V67603S133BQI8 into full sleep mode when driven HIGH. In this state, internal clocks are gated, dynamic power drops to ≤70mA (IZZ), and all outputs go high-impedance. Data retention is guaranteed across the full industrial temperature range without external refresh - verified for minimum 24 hours under worst-case conditions, and typically extends to years with proper decoupling and stable VDD.

What is the pin configuration for the 71V67603S133BQI8, and which package does the 'BQI8' suffix indicate?

The 71V67603S133BQI8 uses the PKG100 (100-pin TQFP) footprint with 256K × 36 organization. The 'BQI8' suffix denotes the industrial-grade, 100-pin thin quad flatpack package (JEDEC MO-140AA), 14mm × 20mm body, with lead finish matte tin and RoHS-compliant construction. Pin 14 may be tied to VDD or left unconnected; pin 64 (ZZ) must be actively driven or pulled externally - internal pull-down is not guaranteed.