Renesas 71V67603S133PFG

Overview

71V67603S133PFG from IDT (Integrated Device Technology) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports interleaved/linear burst modes via LBO input, features self-timed write with global and byte-level write control, and operates across commercial temperature range (0°C to +70°C). It is used in high-speed networking buffers and cache subsystems requiring deterministic timing.

For engineers reviewing the 71V67603S133PFG datasheet, 71V67603S133PFG pinout, 71V67603S133PFG application, or 71V67603S133PFG equivalent, key selection criteria include burst mode flexibility (LBO-controlled), 3.3V I/O compatibility, pipelined read latency, ZZ sleep mode power management, and TQFP-100 packaging for board-level signal integrity.

Technical Context

This SRAM implements a synchronous interface with dual address status inputs (ADSP/ADSC) for processor/cache controller coordination, enabling precise burst address generation. Its internal 2-bit binary burst counter advances on ADV=LOW and selects sequence order based on static LBO level - linear (LBO=LOW) or interleaved (LBO=HIGH).

The device integrates separate write registers per 9-bit byte (BW1–BW4), gated by BWE and overridden by GW, allowing granular data masking without affecting other bytes. Pipelined output staging delivers first valid data one clock cycle after CLK rising edge, with subsequent burst words aligned to successive edges.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pinout validated for 256K × 36 configuration (PKG100).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-133AXC and AS7C3256A-133JCIN, the 71V67603S133PFG uniquely combines LBO-selectable burst order, ZZ-driven deep sleep, and identical 4.2ns tCD performance - making it optimal for systems requiring both timing determinism and dynamic power scaling.

Availability

71V67603S133PFG is available at Aetrix Electronics and suitable for high-speed networking packet buffers, industrial PLC memory modules, and test equipment pattern memory requiring stable component supply and long-term lifecycle support.

Supply support for 71V67603S133PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions, acquired by Renesas Electronics in 2019.

The 71V67603S133PFG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for deterministic-latency applications in networking, computing, and industrial control where pipelined burst access and low-power sleep modes are critical.

FAQ

What is the maximum operating frequency of the 71V67603S133PFG?

The 71V67603S133PFG is rated for 133MHz operation, corresponding to a 7.5ns clock cycle time and 4.2ns clock-to-data (tCD) access time. This specification is guaranteed over the commercial temperature range (0°C to +70°C) with VDD and VDDQ at 3.3V ±5%. Higher frequencies (150MHz/166MHz) apply only to other speed grades (e.g., 71V67603S150/166), not the S133 variant.

Does the 71V67603S133PFG support both 256K × 36 and 512K × 18 configurations?

Yes, the 71V67603S133PFG supports both memory organizations. In 256K × 36 mode, all 36 data bits (I/O0–I/O31 + I/OP1–I/OP4) are active. In 512K × 18 mode, the device maps to 18-bit data width using I/O0–I/O15 + I/OP1–I/OP2, with address lines A17–A18 repurposed for row extension. Pin configurations differ between modes, as shown in the 100-pin TQFP diagrams.

How does the LBO pin affect burst behavior in the 71V67603S133PFG?

The LBO (Linear Burst Order) pin is an asynchronous static input that determines burst address sequencing: when LBO = LOW, the internal counter follows linear order (00→01→10→11); when LBO = HIGH, it follows interleaved order (00→01→11→10). The selected mode persists until LBO changes - and must remain stable during operation to avoid undefined burst behavior.

What is the function of the ZZ pin on the 71V67603S133PFG?

The ZZ pin enables full sleep mode: when driven HIGH, it gates the internal clock and reduces supply current to 50mA (IZZ) while retaining memory contents. ZZ is asynchronous and requires no timing coordination with CLK. Data retention is guaranteed across the commercial temperature range, and the device resumes normal operation within tZZR = 100ns after ZZ returns LOW.

Can the 71V67603S133PFG perform byte-level writes without affecting other data bytes?

Yes. The 71V67603S133PFG supports true byte-selectable writes via BW1–BW4 inputs, each controlling a 9-bit segment (e.g., BW1 → I/O0–I/O7 + I/OP1). When BWE = LOW, active BWx signals mask corresponding bytes during a write cycle; inactive bytes retain prior data. Global Write (GW = LOW) overrides all BWx and writes all 36 bits simultaneously.