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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V67603S133PFGI

Name: 71V67603S133PFGI
Brand: Renesas
SKU: 71V67603S133PFGI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67603S133PFGI

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V67603S133PFGI.pdf

Description:: IC SRAM 9MBIT PARALLEL 100TQFP

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Product details

Overview

71V67603S133PFGI from IDT (now Renesas) is a 256K × 36-bit or 512K × 18-bit 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and burst-mode operation. It supports 133MHz clock frequency (4.2ns access), features self-timed write with global/byte write control, and operates across industrial temperature range (–40°C to +85°C). It serves as high-speed buffer/cache memory in network packet processors and telecom line cards.

For engineers reviewing the 71V67603S133PFGI datasheet, 71V67603S133PFGI pinout, 71V67603S133PFGI application, or 71V67603S133PFGI equivalent, key selection criteria include burst mode configuration (LBO), pipelined read timing (tCD = 4.2ns), ZZ sleep mode current (IZZ = 70mA max), and TQFP-100 package compatibility with JEDEC-standard footprint.

Technical Context

This SRAM implements a synchronous interface with dual chip-select logic (CS0 active-HIGH, CS1 active-LOW), pipelined output registers triggered on CLK rising edge, and burst address counter controlled by ADV and LBO inputs. The internal architecture includes separate address, data input, and output registers, enabling single-cycle deselect and overlapping read/write cycles.

It supports two burst orders-linear or interleaved-selected via static LBO pin, and provides four-byte-wide write capability using GW, BWE, and BW1–BW4 signals. Power management includes asynchronous ZZ sleep mode (IZZ ≤ 70mA) and CMOS standby (ISB1 ≤ 70mA), both requiring no clock gating during entry/exit.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (or 512K × 18-bit); enables flexible data bus width matching for 32-bit or 16-bit systems with parity support via I/OPx pins.
Clock Frequency	133MHz (tCYC = 7.5ns); guarantees deterministic timing for high-throughput packet buffering in telecom ASIC interfaces.
Access Time	tCD = 4.2ns (clock-to-valid-data); ensures first burst word meets setup timing without additional wait states in 133MHz systems.
Supply Voltages	VDD = 3.3V ±5%, VDDQ = 3.3V ±5%; decoupled core/I/O rails reduce noise coupling and support mixed-voltage board designs.
Operating Temperature	–40°C to +85°C (industrial grade); validated for deployment in uncontrolled ambient environments like base station cabinets.
Power Consumption	IDDACT = 280mA max at 133MHz; ISB1 = 70mA max in standby; enables thermal-aware power budgeting for dense memory subsystems.
Burst Mode	Linear or interleaved (LBO-controlled); matches CPU cache line ordering requirements for seamless integration with MIPS or PowerPC-based controllers.

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pinout optimized for signal integrity: dedicated VDD/VSS pairs per quadrant, grouped I/O banks (I/O0–I/O31 + I/OP1–I/OP4), and separated control/address clusters.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous address latching on ADSP/ADSC low + CE low; A0/A1 define burst sequence start within 4-word block.
CLK	System Clock Input	Rising-edge-triggered register control; all timing referenced to this signal; requires clean, low-jitter source for tCD compliance.
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE gates byte enables; BW1–BW4 select 9-bit subwords (e.g., BW1 → I/O0–I/O7 + I/OP1).
ADV, ADSP, ADSC	Burst & Address Status	ADSP (processor) or ADSC (cache controller) loads address register; ADV advances burst counter; both synchronous to CLK.
LBO	Burst Order Select	Asynchronous static input: LBO = LOW → linear burst; LBO = HIGH → interleaved burst; must be stable during operation.
ZZ	Asynchronous Sleep Enable	ZZ = HIGH disables internal clock and reduces current to 70mA max; no sequencing required; retains data during sleep.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional bus; registered input/output paths; I/OPx are parity bits for error detection in mission-critical buffers.

Key Features

Feature	Design Value
Pipelined Outputs	First data word available one clock cycle after address load; enables continuous burst reads at full 133MHz without pipeline stalls.
Single-Cycle Deselect	Chip deactivation completes within one CLK cycle; eliminates bus contention during rapid context switching in multi-SRAM systems.
Self-Timed Write Cycle	Internal write timing determined by GW/BWE/BWx sampling at CLK edge; removes external write-pulse generation logic.
Configurable Burst Order	LBO pin selects linear (sequential) or interleaved (cache-friendly) addressing; matches host processor's memory access pattern.
Industrial Temperature Range	Rated –40°C to +85°C with full AC/DC specs guaranteed; eliminates derating calculations for outdoor or industrial control applications.
Low-Power Sleep Mode	IZZ ≤ 70mA at VDD = 3.465V; supports dynamic power gating in always-on network infrastructure without data loss.

Applications

Network Packet Buffer	Telecom Line Card Cache
Use Scenario: Storing incoming/outgoing Ethernet frames in a Layer 2 switch ASIC before forwarding decision. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as frame buffer; accepts burst writes from MAC and burst reads to PHY. Use Value: 133MHz pipelined reads deliver 4×36-bit words per cycle (192 Mbps per port), meeting 1Gbps line-rate buffering requirements.	Use Scenario: Holding protocol stack state and packet headers in a DSLAM or OLT line card. IC Role / Device Role / Timing Role: Synchronous cache memory interfacing with RISC processor; uses ADSP/ADSC handshake for precise address capture. Use Value: Single-cycle deselect allows rapid switching between multiple protocol contexts, reducing average latency by >30% vs. asynchronous SRAM.
Baseband Processor Memory	Industrial PLC Data Log
Use Scenario: Temporary storage of FFT coefficients and channel estimation results in LTE femtocell baseband processing. IC Role / Device Role / Timing Role: Burst-access scratchpad memory co-located with DSP core; LBO set to interleaved to match cache line stride. Use Value: 4.2ns tCD ensures coefficient writes complete before next pipeline stage, eliminating interlock penalties in real-time signal chains.	Use Scenario: Logging sensor readings and machine status events in an industrial programmable logic controller operating in harsh environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing nonvolatile-like reliability via ZZ sleep mode during idle periods. Use Value: –40°C to +85°C rating and 70mA sleep current enable 24/7 operation in unheated factory enclosures with minimal cooling overhead.

Network Packet Buffer

Telecom Line Card Cache

Use Scenario: Storing incoming/outgoing Ethernet frames in a Layer 2 switch ASIC before forwarding decision.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as frame buffer; accepts burst writes from MAC and burst reads to PHY.

Use Value: 133MHz pipelined reads deliver 4×36-bit words per cycle (192 Mbps per port), meeting 1Gbps line-rate buffering requirements.

Use Scenario: Holding protocol stack state and packet headers in a DSLAM or OLT line card.

IC Role / Device Role / Timing Role: Synchronous cache memory interfacing with RISC processor; uses ADSP/ADSC handshake for precise address capture.

Use Value: Single-cycle deselect allows rapid switching between multiple protocol contexts, reducing average latency by >30% vs. asynchronous SRAM.

Baseband Processor Memory

Industrial PLC Data Log

Use Scenario: Temporary storage of FFT coefficients and channel estimation results in LTE femtocell baseband processing.

IC Role / Device Role / Timing Role: Burst-access scratchpad memory co-located with DSP core; LBO set to interleaved to match cache line stride.

Use Value: 4.2ns tCD ensures coefficient writes complete before next pipeline stage, eliminating interlock penalties in real-time signal chains.

Use Scenario: Logging sensor readings and machine status events in an industrial programmable logic controller operating in harsh environments.

IC Role / Device Role / Timing Role: Industrial-grade SRAM providing nonvolatile-like reliability via ZZ sleep mode during idle periods.

Use Value: –40°C to +85°C rating and 70mA sleep current enable 24/7 operation in unheated factory enclosures with minimal cooling overhead.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV33-133AXC	Same 256K × 36 organization, 133MHz, TQFP-100; but uses single VDD (3.3V) for core/I/O; no separate VDDQ rail.	Lacks VDDQ decoupling - higher I/O noise sensitivity in mixed-signal systems; no I/OP parity pins.	Select when board layout simplicity outweighs need for I/O noise isolation or parity protection.
AS7C3256B-133JCIN	256K × 36, 133MHz, but only commercial temp (0°C to +70°C); no ZZ sleep mode; uses different burst control (no ADV/ADSC).	Not qualified for industrial environments; lacks burst suspend/resume capability via ADV high; limited power management.	Acceptable only for cost-sensitive, temperature-controlled indoor applications with fixed burst length.

Compared with CY7C1362BV33-133AXC and AS7C3256B-133JCIN, the 71V67603S133PFGI offers superior noise immunity via VDDQ separation, full industrial temperature support, and advanced burst control (ADV/ADSC/LBO) essential for telecom and embedded real-time systems.

Availability

71V67603S133PFGI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and industrial PLC data logging requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V67603S133PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V67603S133PFGI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking and telecom infrastructure equipment.

FAQ

What is the maximum clock frequency supported by the 71V67603S133PFGI?

The 71V67603S133PFGI is rated for 133MHz operation, with guaranteed tCYC = 7.5ns and tCD = 4.2ns under industrial conditions (–40°C to +85°C, VDD = 3.3V ±5%). This frequency is validated across all 256K × 36 and 512K × 18 configurations in the TQFP-100 package. Higher speeds (150/166MHz) apply only to commercial-grade variants.

Does the 71V67603S133PFGI support both linear and interleaved burst modes?

Yes, the 71V67603S133PFGI supports both burst orders via the LBO (Linear Burst Order) pin: LBO = LOW selects linear mode (00→01→10→11), while LBO = HIGH selects interleaved mode (00→01→11→10). The LBO input is asynchronous and static - it must remain stable during device operation to prevent burst sequence corruption.

How does the ZZ pin function in the 71V67603S133PFGI?

The ZZ pin places the 71V67603S133PFGI into full sleep mode when driven HIGH, reducing supply current to ≤70mA (IZZ) while retaining memory contents. ZZ is asynchronous, requires no clock, and has internal pull-down; it can be left unconnected if sleep mode is unused. Recovery time (tZZR) is 100ns minimum after ZZ returns LOW.

What is the role of the ADV, ADSP, and ADSC pins in the 71V67603S133PFGI?

In the 71V67603S133PFGI, ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) are synchronous inputs that latch the address register on their falling edge when CE is active. ADV (Burst Address Advance) controls the internal burst counter - ADV = LOW increments the counter for sequential burst access, while ADV = HIGH suspends burst progression for partial transfers.

Can the 71V67603S133PFGI operate with different memory configurations on the same device?

Yes, the 71V67603S133PFGI is configurable as either 256K × 36-bit or 512K × 18-bit via address pin mapping (A17/A18 usage differs between modes), but the configuration is fixed at power-up and cannot be dynamically switched. The device does not auto-detect mode; system design must route address lines accordingly for the chosen organization.

71V67603S133PFGI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tray

Product Status:: Active

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 133 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 4.2 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V67603S133PFGI FAQ

1.How can I place an order for 71V67603S133PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67603S133PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67603S133PFGI reliable?

The price and inventory of 71V67603S133PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S133PFGI is usually 5 days.

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Once your 71V67603S133PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67603S133PFGI?

For technical support, including 71V67603S133PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S133PFGI requirements.

6.How does Aetrix verify that 71V67603S133PFGI is sourced from the original manufacturer or authorized distributors?

All 71V67603S133PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S133PFGI meets industry standards.

7.What is the process for return or replacement of 71V67603S133PFGI?

All 71V67603S133PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S133PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67603S133PFGI part is unused and in its original packaging.

Return procedure for 71V67603S133PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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