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Renesas 71V67603S133PFGI8

Name: 71V67603S133PFGI8
Brand: Renesas
SKU: 71V67603S133PFGI8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67603S133PFGI8

Manufacturer:: Renesas

Category:: Memory

Package:: 100-LQFP

Datasheet:: 71V67603S133PFGI8.pdf

Description:: IC SRAM 9MBIT PARALLEL 100TQFP

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Product details

Overview

71V67603S133PFGI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 133MHz operation (4.2ns clock access time). It supports linear/interleaved burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW4), and operates across industrial temperature range (−40°C to +85°C). It is used in high-speed networking buffers and cache subsystems requiring deterministic timing.

For engineers reviewing the 71V67603S133PFGI8 datasheet, 71V67603S133PFGI8 pinout, 71V67603S133PFGI8 application, or 71V67603S133PFGI8 equivalent, key selection criteria include burst mode configurability (LBO), 3.3V I/O compatibility (VDDQ), pipelined read latency, self-timed write cycle support, and TQFP-100 packaging for legacy board compatibility.

Technical Context

The 71V67603S133PFGI8 implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter-gated by ADV and configured by LBO-enables four-word burst sequences from a single address, with pipelined output staging delivering first data on the second clock edge.

Write operations are fully synchronous and support multiple granularities: global write (GW), byte write enable (BWE), and individual byte writes (BW1–BW4). Power management includes asynchronous ZZ-controlled sleep mode (IZZ ≤ 70mA) and CMOS standby (ISB1 ≤ 70mA), both maintaining data retention.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9Mbit); supports 512K × 18-bit via address mapping - enables flexible bus-width adaptation in 32-bit+ systems.
Clock Frequency / Access Time	133MHz max, 4.2ns clock access time - guarantees deterministic read latency for real-time packet buffering.
Supply Voltages	VDD = 3.3V ±5%, VDDQ = 3.3V ±5% - decoupled core/I/O rails reduce noise coupling in mixed-signal environments.
Burst Mode Control	LBO pin selects linear or interleaved burst sequence - critical for cache line alignment with x86 or PowerPC processors.
Power-Down Current	IZZ ≤ 70mA (industrial temp) - enables low-power idle states in telecom line cards without data loss.
Package	JEDEC-standard 100-pin TQFP (14mm × 20mm) - compatible with legacy PCB footprints and reflow profiles.
Operating Temperature	−40°C to +85°C - qualified for industrial and telecom infrastructure deployments.

Pinout & Package

71V67603S133PFGI8 is packaged in a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm body, with 0.5mm pitch. Pin 1 marked by dot; top-side marking includes "71V67603", date code, and manufacturer logo.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous address latching on rising CLK edge gated by ADSP/ADSC - supports 256K×36 (A0–A17) or 512K×18 (A0–A18) addressing.
CLK	System Clock Input	Primary timing reference; all registers (address, data, control) sample on rising edge - defines maximum system throughput.
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte - enables ECC byte repair or partial-line updates.
I/O0–I/O31, I/OP1–I/OP4	Data I/O (36-bit)	Synchronous bidirectional data path with registered input/output - ensures setup/hold compliance at 133MHz.
ZZ	Asynchronous Sleep Enable	High-active signal that gates internal CLK and reduces current to IZZ - enables instant low-power entry without clock-stopping coordination.
LBO	Burst Order Select	Static input defining burst address sequence (linear vs. interleaved) - must be stable during operation; no dynamic switching allowed.

Key Features

Feature	Design Value
Pipelined Outputs	First read data available on second CLK edge - eliminates wait states in CPU/cache interfaces.
Single-Cycle Deselect	Chip deactivation completes within one clock cycle - enables rapid context switching between memory banks.
Self-Timed Write Cycle	Internal timing logic eliminates external write pulse generation - simplifies FPGA/CPLD control logic.
Byte-Write Granularity	Four independent 9-bit write enables (BW1–BW4) - supports 8-bit peripheral register access over 32-bit bus.
3.3V Core + I/O Separation	Dedicated VDD (core) and VDDQ (I/O) supplies - isolates switching noise from sensitive analog sections in mixed-signal SoCs.

Applications

Network Packet Buffering	Processor Cache Interface
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with burst reads aligned to 64-byte cache lines. Use Value: 133MHz clock rate and pipelined outputs sustain ≥1.0 Gbps sustained throughput with zero wait states.	Use Scenario: Secondary cache (L2) for MIPS or PowerPC-based baseband processors in wireless infrastructure. IC Role / Device Role / Timing Role: Synchronous SRAM acting as tag/data array with deterministic 4.2ns access for hit detection. Use Value: Single-cycle deselect allows rapid bank switching between instruction and data caches without pipeline stalls.
Industrial PLC Data Logging	Medical Imaging Frame Store
Use Scenario: Cyclic acquisition of sensor data (ADC streams, motion feedback) with timestamped storage. IC Role / Device Role / Timing Role: Burst-write-capable buffer accepting 4-word blocks from DMA controller. Use Value: Byte-write enables (BW1–BW4) allow selective update of status flags or metadata without disturbing payload data.	Use Scenario: Real-time buffering of 1080p video frames from ultrasound or MRI front-end ADCs. IC Role / Device Role / Timing Role: Low-jitter, jitter-immune frame memory synchronized to pixel clock domain. Use Value: Industrial temperature rating (−40°C to +85°C) and 70mA sleep current ensure reliability in fanless enclosures.

Network Packet Buffering

Processor Cache Interface

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with burst reads aligned to 64-byte cache lines.

Use Value: 133MHz clock rate and pipelined outputs sustain ≥1.0 Gbps sustained throughput with zero wait states.

Use Scenario: Secondary cache (L2) for MIPS or PowerPC-based baseband processors in wireless infrastructure.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as tag/data array with deterministic 4.2ns access for hit detection.

Use Value: Single-cycle deselect allows rapid bank switching between instruction and data caches without pipeline stalls.

Industrial PLC Data Logging

Medical Imaging Frame Store

Use Scenario: Cyclic acquisition of sensor data (ADC streams, motion feedback) with timestamped storage.

IC Role / Device Role / Timing Role: Burst-write-capable buffer accepting 4-word blocks from DMA controller.

Use Value: Byte-write enables (BW1–BW4) allow selective update of status flags or metadata without disturbing payload data.

Use Scenario: Real-time buffering of 1080p video frames from ultrasound or MRI front-end ADCs.

IC Role / Device Role / Timing Role: Low-jitter, jitter-immune frame memory synchronized to pixel clock domain.

Use Value: Industrial temperature rating (−40°C to +85°C) and 70mA sleep current ensure reliability in fanless enclosures.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371DV33-133AXC	256K × 36, 133MHz, 3.3V, 100-pin TQFP - identical organization and speed, but uses different burst control (MODE pin instead of LBO) and lacks ZZ sleep mode.	No hardware sleep mode; requires external power gating for low-idle power - unsuitable for always-on medical devices.	Select when LBO configuration flexibility is unnecessary and legacy Cypress toolchain support is required.
AS7C3256A-133JCIN	256K × 36, 133MHz, 3.3V, 100-pin TQFP - supports same burst modes and ZZ sleep, but has higher ISB1 (100mA vs. 70mA) and no BGA variants.	Higher standby current limits use in thermally constrained telecom modules; no 119-ball BGA option for space-constrained designs.	Select when footprint compatibility is critical and BGA migration is not planned; verify thermal derating in sealed enclosures.

Compared with CY7C1371DV33-133AXC and AS7C3256A-133JCIN, the 71V67603S133PFGI8 uniquely combines LBO-configurable burst sequencing, guaranteed 70mA sleep current, and multi-package availability (TQFP/BGA/fBGA), making it optimal for upgrade paths in industrial and telecom platforms requiring long-term supply stability.

Availability

71V67603S133PFGI8 is available at Aetrix Electronics and suitable for network packet buffering, processor cache interface, and industrial PLC data logging requiring stable component supply across extended product lifecycles.

Supply support for 71V67603S133PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing markets.

The 71V67603S133PFGI8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for deterministic, low-latency data buffering in networking, storage, and real-time embedded systems.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67603S133PFGI8?

The 71V67603S133PFGI8 is rated for 133MHz operation with a guaranteed clock access time of 4.2ns. This specification applies across the full industrial temperature range (−40°C to +85°C) and under worst-case voltage conditions (VDD = 3.135V). The device also supports lower-speed grades (150MHz/3.8ns and 166MHz/3.5ns), but the 'S133' suffix confirms this unit is the 133MHz variant.

Does the 71V67603S133PFGI8 support both linear and interleaved burst modes, and how is this selected?

Yes, the 71V67603S133PFGI8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, linear burst order is selected; when HIGH, interleaved burst order is selected. LBO is a static input and must remain stable during device operation - dynamic switching is not permitted per datasheet specifications.

What power-saving features does the 71V67603S133PFGI8 offer, and what are their current draw values?

The 71V67603S133PFGI8 offers three power states: active (IDD ≤ 280mA), CMOS standby (ISB1 ≤ 70mA), and full sleep mode (IZZ ≤ 70mA). Sleep mode is activated asynchronously via the ZZ pin and maintains full data retention. All values are specified at VDD = 3.465V and −40°C to +85°C, ensuring robust low-power operation in industrial environments.

How many byte-write enable signals does the 71V67603S133PFGI8 provide, and what is their function?

The 71V67603S133PFGI8 provides four dedicated byte-write enable signals: BW1, BW2, BW3, and BW4. Each controls one 9-bit byte of the 36-bit data bus (BW1 → I/O0–7 + I/OP1; BW2 → I/O8–15 + I/OP2; etc.). When asserted with BWE active, they allow partial writes without affecting other bytes - essential for register-mapped peripherals and ECC correction.

Is the 71V67603S133PFGI8 pin-compatible with other members of the 71V67603/71V67803 family, such as the 71V67803S133PFGI8?

No, the 71V67603S133PFGI8 is not pin-compatible with the 71V67803S133PFGI8. While both share the same 100-pin TQFP package and core pinout, the 71V67803 omits BW3 and BW4 pins (replaced with NC), and its address mapping differs (512K × 18 vs. 256K × 36). Direct substitution requires PCB layout revision and firmware address remapping.

71V67603S133PFGI8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 100-LQFP

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 133 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 4.2 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 100-TQFP (14x14)

71V67603S133PFGI8 FAQ

1.How can I place an order for 71V67603S133PFGI8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67603S133PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67603S133PFGI8 reliable?

The price and inventory of 71V67603S133PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S133PFGI8 is usually 5 days.

3.What payment methods are accepted for 71V67603S133PFGI8?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67603S133PFGI8 transactions.

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4.How is shipping managed for 71V67603S133PFGI8?

71V67603S133PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67603S133PFGI8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67603S133PFGI8?

For technical support, including 71V67603S133PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S133PFGI8 requirements.

6.How does Aetrix verify that 71V67603S133PFGI8 is sourced from the original manufacturer or authorized distributors?

All 71V67603S133PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S133PFGI8 meets industry standards.

7.What is the process for return or replacement of 71V67603S133PFGI8?

All 71V67603S133PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S133PFGI8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67603S133PFGI8 part is unused and in its original packaging.

Return procedure for 71V67603S133PFGI8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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