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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V67603S150BG

Name: 71V67603S150BG
Brand: Renesas
SKU: 71V67603S150BG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67603S150BG

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V67603S150BG.pdf

Description:: IC SRAM 9MBIT PAR 150MHZ 119PBGA

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Product details

Overview

71V67603S150BG from IDT (Integrated Device Technology) is a 256K × 36-bit or 512K × 18-bit synchronous SRAM with pipelined outputs, single-cycle deselect, and 3.3V core/I/O supplies. It supports 150MHz operation with 3.8ns clock access time, burst addressing via ADV/ADSP/ADSC, and self-timed write with global or byte-level control. It is used in high-speed networking buffers, cache memory subsystems, and FPGA co-processor interfaces requiring deterministic latency.

For engineers reviewing the 71V67603S150BG datasheet, 71V67603S150BG pinout, 71V67603S150BG application, or 71V67603S150BG equivalent, key selection criteria include burst mode configuration (LBO), pipelined read timing (tCD = 3.8ns), ZZ-controlled sleep mode (IZZ ≤ 70mA), and JEDEC-standard 100-pin TQFP packaging with VDDQ-separated I/O supply.

Technical Context

The 71V67603S150BG implements a synchronous dual-register architecture: address, data input, and output registers are all clocked on the rising edge of CLK. Burst sequencing is managed by an internal binary counter synchronized to ADV, with LBO selecting linear or interleaved address order. ADSP and ADSC provide processor- or cache-controller-initiated address latching, enabling tightly coupled memory access in multi-master systems.

Write operations support four modes: global write (GW), byte write enable (BWE) with individual BW1–BW4 controls, and combinations thereof - all self-timed and completed within one clock cycle. Power management includes active standby (ISB1 ≤ 70mA), clock-running standby (ISB2 ≤ 175mA), and full sleep (IZZ ≤ 70mA) activated asynchronously via ZZ.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit or 512K × 18-bit - selectable via pin-strapping or system configuration; enables flexible data bus width matching.
Clock Frequency / Access Time	150MHz / 3.8ns - guarantees deterministic read latency for real-time packet buffering and cache line fills.
Burst Mode	Four-word pipelined burst per address - reduces address bus traffic and improves sustained bandwidth in sequential access patterns.
Supply Voltages	VDD = 3.3V ±5%, VDDQ = 3.3V ±5% - separate core and I/O rails minimize switching noise coupling into sensitive analog sections.
Operating Temperature	–40°C to +85°C (Industrial grade) - validated for deployment in base station equipment and industrial controllers.
Power-Down Control	Asynchronous ZZ input - enables sub-70mA sleep current without clock gating or software coordination.
Output Drive	Pipelined, registered outputs - eliminates hold-time violations when interfacing with high-speed FPGAs or ASICs.

Pinout & Package

71V67603S150BG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pin 1 marked via corner cut; top-side marking includes "71V67603S150BG" and date code.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous inputs latched on rising CLK edge with ADSP/ADSC; A0–A17 used for 256K×36, A0–A18 for 512K×18.
CLK	System Clock Input	Single-ended CMOS input; all register transfers and timing referenced to its rising edge.
ADSP / ADSC	Address Status Inputs	ADSP (processor) and ADSC (cache controller) trigger address register load; both synchronous, active-low.
ADV	Burst Address Advance	Active-low synchronous signal that increments internal burst counter; held HIGH to suspend burst sequence.
GW / BWE / BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7/I/OP1, etc.).
OE	Output Enable	Asynchronous, active-low control of output drivers - allows dynamic bus sharing without clock synchronization.
ZZ	Sleep Mode Input	Asynchronous, active-high input that disables internal clock distribution and reduces supply current to ≤70mA.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional synchronous bus; registered input/output paths ensure setup/hold compliance at 150MHz.
VDD / VDDQ / VSS	Power Supplies	VDD (3.3V core), VDDQ (3.3V I/O), and VSS (ground) - require local decoupling per JEDEC TQFP layout guidelines.

Key Features

Feature	Design Value
Single-cycle deselect	Enables immediate bus release after read/write completion - critical for multi-device arbitration in shared-memory architectures.
Pipelined output registers	Delivers first burst word one clock cycle after address latch - eliminates wait states in high-throughput streaming applications.
Configurable burst order (LBO)	LBO pin selects linear or interleaved address sequence - matches CPU cache line mapping or DMA engine expectations.
Self-timed write cycle	Internal timing logic completes writes without external strobe extension - simplifies timing closure in mixed-signal SoC designs.
Separate VDDQ supply	Isolates I/O switching noise from core logic - maintains signal integrity for adjacent analog or RF circuitry on same PCB.

Applications

Network Packet Buffering	FPGA Co-Processor Cache
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before classification or forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with burst reads aligned to 64-byte cache lines. Use Value: 150MHz clock rate and pipelined outputs sustain >4.8 Gbps throughput; single-cycle deselect prevents pipeline stalls during context switches.	Use Scenario: Offloading compute-intensive tasks (e.g., encryption, FFT) from host CPU using FPGA-accelerated pipelines. IC Role / Device Role / Timing Role: Local instruction/data scratchpad with deterministic 3.8ns access for tight-loop execution. Use Value: Synchronous interface eliminates handshake overhead; ZZ sleep mode cuts idle power by >80% during FPGA reconfiguration.
Industrial PLC Memory Expansion	Baseband Signal Processing Buffer
Use Scenario: Extending program memory and I/O mapping space in programmable logic controllers operating in harsh environments. IC Role / Device Role / Timing Role: Industrial-grade SRAM providing reliable storage for ladder logic state tables and sensor history logs. Use Value: –40°C to +85°C rating ensures operation in uncontrolled cabinets; separate VDDQ minimizes EMI impact on analog sensor front-ends.	Use Scenario: Holding intermediate results in LTE/5G baseband processing chains (e.g., channel estimation, MIMO matrix inversion). IC Role / Device Role / Timing Role: Low-jitter, burst-capable memory supporting parallel MAC units with strict timing deadlines. Use Value: Linear burst mode (LBO = LOW) aligns with 128-bit SIMD data widths; tCD = 3.8ns meets sub-7ns latency budgets for real-time PHY layers.

Network Packet Buffering

FPGA Co-Processor Cache

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before classification or forwarding decisions.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer with burst reads aligned to 64-byte cache lines.

Use Value: 150MHz clock rate and pipelined outputs sustain >4.8 Gbps throughput; single-cycle deselect prevents pipeline stalls during context switches.

Use Scenario: Offloading compute-intensive tasks (e.g., encryption, FFT) from host CPU using FPGA-accelerated pipelines.

IC Role / Device Role / Timing Role: Local instruction/data scratchpad with deterministic 3.8ns access for tight-loop execution.

Use Value: Synchronous interface eliminates handshake overhead; ZZ sleep mode cuts idle power by >80% during FPGA reconfiguration.

Industrial PLC Memory Expansion

Baseband Signal Processing Buffer

Use Scenario: Extending program memory and I/O mapping space in programmable logic controllers operating in harsh environments.

IC Role / Device Role / Timing Role: Industrial-grade SRAM providing reliable storage for ladder logic state tables and sensor history logs.

Use Value: –40°C to +85°C rating ensures operation in uncontrolled cabinets; separate VDDQ minimizes EMI impact on analog sensor front-ends.

Use Scenario: Holding intermediate results in LTE/5G baseband processing chains (e.g., channel estimation, MIMO matrix inversion).

IC Role / Device Role / Timing Role: Low-jitter, burst-capable memory supporting parallel MAC units with strict timing deadlines.

Use Value: Linear burst mode (LBO = LOW) aligns with 128-bit SIMD data widths; tCD = 3.8ns meets sub-7ns latency budgets for real-time PHY layers.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371BV33-167AXC	167MHz max, 133-ball BGA only, no LBO pin - fixed linear burst; higher IDD (360mA @ 167MHz).	Requires PCB redesign for BGA footprint; lacks interleaved burst option needed for certain cache controllers.	Select when maximum speed (167MHz) is required and burst order is fixed; verify thermal dissipation in compact enclosures.
AS7C33256P-15TIN	15ns async access, no pipelining or burst; 32Mbit × 8 organization; 100-pin TQFP compatible pinout but different function mapping.	Cannot replace 71V67603S150BG in burst-driven systems; suitable only for legacy non-pipelined controllers.	Consider only for cost-sensitive, non-real-time applications where deterministic latency and burst efficiency are not required.

Compared with CY7C1371BV33-167AXC and AS7C33256P-15TIN, the 71V67603S150BG uniquely delivers configurable burst order, pipelined outputs, and single-cycle deselect in a drop-in 100-pin TQFP package - enabling direct upgrade paths in existing high-speed memory subsystems without layout changes.

Availability

71V67603S150BG is available at Aetrix Electronics and suitable for network infrastructure, industrial automation, and wireless baseband applications requiring stable component supply across extended product lifecycles.

Supply support for 71V67603S150BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V67603S150BG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-oriented memory subsystems in networking and signal processing equipment.

FAQ

What is the maximum supported clock frequency for the 71V67603S150BG?

The 71V67603S150BG is rated for 150MHz operation with guaranteed 3.8ns clock-to-data access time under industrial temperature conditions (–40°C to +85°C). Its design supports stable operation at this frequency with proper PCB layout, power decoupling, and signal integrity practices - no derating required for nominal VDD/VDDQ (3.3V ±5%).

Does the 71V67603S150BG support both 256K × 36 and 512K × 18 configurations on the same device?

Yes, the 71V67603S150BG supports both organizations via pin-strapping and address decoding: 256K × 36 uses A0–A17 (18 address bits), while 512K × 18 uses A0–A18 (19 address bits). The internal memory array is physically configured to accommodate either mapping, and mode selection is determined by system address bus width and control logic.

How does the LBO pin affect burst behavior in the 71V67603S150BG?

The LBO (Linear Burst Order) pin selects between linear (LBO = LOW) and interleaved (LBO = HIGH) burst sequences. In linear mode, burst addresses increment sequentially (e.g., Ax, Ax+1, Ax+2, Ax+3); in interleaved mode, they follow a bit-swizzled pattern optimized for cache line alignment. LBO is static - it must be set before burst initiation and held stable during operation.

Can the 71V67603S150BG operate with different voltages on VDD and VDDQ?

No - the 71V67603S150BG requires matched 3.3V ±5% supplies on both VDD (core) and VDDQ (I/O). The datasheet specifies identical min/max tolerances (3.135V–3.465V) and prohibits voltage differential between them. Deviation risks timing violation, data corruption, or accelerated wear-out.

What is the role of the ZZ pin during power-up and sleep recovery in the 71V67603S150BG?

The ZZ pin provides asynchronous entry into full sleep mode (IZZ ≤ 70mA), but the device must be deselected (CE/CS0/CS1 inactive) before asserting ZZ HIGH. Upon exit, tZZR = 100ns minimum recovery time is required before issuing the first valid command - during which CLK must remain stable and all control inputs must meet setup/hold requirements.

71V67603S150BG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 150 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V67603S150BG FAQ

1.How can I place an order for 71V67603S150BG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67603S150BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67603S150BG reliable?

The price and inventory of 71V67603S150BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S150BG is usually 5 days.

3.What payment methods are accepted for 71V67603S150BG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67603S150BG transactions.

Note: Certain payment methods may incur a processing fee.

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71V67603S150BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67603S150BG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67603S150BG?

For technical support, including 71V67603S150BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S150BG requirements.

6.How does Aetrix verify that 71V67603S150BG is sourced from the original manufacturer or authorized distributors?

All 71V67603S150BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S150BG meets industry standards.

7.What is the process for return or replacement of 71V67603S150BG?

All 71V67603S150BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S150BG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67603S150BG part is unused and in its original packaging.

Return procedure for 71V67603S150BG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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