Renesas 71V67603S150BG8

Overview

71V67603S150BG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports interleaved/linear burst modes via LBO input, features self-timed write with global and byte-level write control, and operates across industrial temperature range (–40°C to +85°C). It is used in high-speed networking buffers and cache subsystems requiring deterministic latency.

For engineers reviewing the 71V67603S150BG8 datasheet, 71V67603S150BG8 pinout, 71V67603S150BG8 application, or 71V67603S150BG8 equivalent, key selection criteria include burst mode timing compliance, ZZ sleep current (≤70mA), VDDQ I/O supply tolerance (±5%), and TQFP-100 package compatibility with JEDEC MO-140 standard layout.

Technical Context

This SRAM implements a synchronous interface with dual address status inputs (ADSP/ADSC), pipelined read outputs (tCD = 3.8ns at 150MHz), and a 4-word burst counter driven by ADV and LBO. Its internal architecture includes separate address, data, and control registers, enabling self-timed writes without external delay logic.

The device supports both global write (GW) and fine-grained byte writes (BW1–BW4), with BWE gating byte enables and CE/CS0/CS1 enabling hierarchical chip selection. Power management includes active standby (ISB1 = 70mA), clock-running standby (ISB2 = 175mA), and full sleep mode (IZZ = 70mA) activated by asynchronous ZZ input.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pin 1 marked by corner notch; pin 14 may be tied to VDD or left unconnected; pin 64 (ZZ) must be actively driven HIGH for sleep mode.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV18-167AXC and AS7C33128PFSIG, the 71V67603S150BG8 uniquely delivers 36-bit width with programmable burst order and pipelined timing at 150MHz - essential for high-throughput packet buffering where address sequence control and sub-4ns latency are mandatory.

Availability

71V67603S150BG8 is available at Aetrix Electronics and suitable for networking packet buffers, industrial PLC data loggers, telecom baseband processing, and high-speed cache controllers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V67603S150BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) designs high-performance memory and timing solutions for communications, computing, and industrial markets.

The 71V67603S150BG8 belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for deterministic-latency applications in networking infrastructure and real-time embedded systems.

FAQ

What is the maximum supported clock frequency for 71V67603S150BG8?

The 71V67603S150BG8 is rated for 150MHz operation with 3.8ns clock-to-data (tCD) timing. It also supports 166MHz (3.5ns) and 133MHz (4.2ns) configurations, but the 'S150' suffix confirms this specific variant is characterized and guaranteed at 150MHz across the industrial temperature range (–40°C to +85°C). Exceeding 150MHz may violate setup/hold margins.

Does 71V67603S150BG8 support both 256K × 36 and 512K × 18 configurations?

Yes, the 71V67603S150BG8 supports both organizations. The memory array is physically 256K × 36, but pin-strapping (e.g., tying A18 HIGH or using CS0/CS1 combinations) reconfigures it as 512K × 18. This is confirmed in the functional description and pin configuration diagrams for PKG100, where NC pins differ between the two modes.

How does the LBO pin affect burst addressing in 71V67603S150BG8?

The LBO pin selects burst order: LOW enables linear addressing (00→01→10→11), HIGH enables interleaved (00→01→11→10). This is defined in the Interleaved and Linear Burst Sequence Tables. LBO is static - changing it mid-burst violates timing and may corrupt data; it must be set before burst initiation and held constant during operation.

What is the role of the ZZ pin in 71V67603S150BG8 power management?

The ZZ pin provides asynchronous entry into full sleep mode: driving ZZ HIGH gates the internal clock and reduces supply current to IZZ ≤ 70mA (industrial grade) while retaining all stored data. Unlike standby modes, ZZ sleep requires no clock activity and is recoverable within tZZR ≤ 100ns after ZZ returns LOW - critical for rapid wake-up in power-gated systems.

Can 71V67603S150BG8 perform byte-level writes without affecting other bytes?

Yes. With BWE LOW and any combination of BW1–BW4 asserted, only the corresponding 9-bit byte(s) are written; all others retain their prior values. The truth table confirms that "Write Byte 1" (BW1 LOW, others HIGH) modifies only I/O0–I/O7 and I/OP1. This eliminates need for read-modify-write cycles in partial-word update scenarios.