Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V67603S150BGG

Name: 71V67603S150BGG
Brand: Renesas
SKU: 71V67603S150BGG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: 71V67603S150BGG

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V67603S150BGG.pdf

Description:: IC SRAM 9MBIT PAR 150MHZ 119PBGA

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:4,773

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

71V67603S150BGG from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports interleaved/linear burst modes via LBO input, features self-timed write with global and byte-level write control, and targets high-speed cache and buffer applications in networking and telecom systems.

For engineers reviewing the 71V67603S150BGG datasheet, 71V67603S150BGG pinout, 71V67603S150BGG application, or 71V67603S150BGG equivalent, key selection criteria include burst mode timing compliance, 3.3V I/O compatibility, TQFP-100 package footprint, and industrial temperature range support (-40°C to +85°C).

Technical Context

This SRAM implements a synchronous interface with registered address, data, and control paths triggered on the rising edge of CLK. Burst addressing uses an internal binary counter synchronized to ADV, with LBO selecting linear or interleaved sequence - both defined per JEDEC-standard burst protocols.

Write operations are self-timed: GW enables full 36-bit writes, while BWE and BW1–BW4 allow selective 9-bit byte writes. Power management includes asynchronous ZZ-controlled sleep mode (IZZ ≤ 70mA) and CMOS standby (ISB1 ≤ 70mA), with pipelined read outputs delivering first data one clock cycle after address latch.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-strapping
Max Clock Frequency	150MHz - guarantees tCYC ≤ 6.7ns for full-speed burst reads/writes
Access Time	3.8ns - clock-to-valid-data delay (tCD) at 150MHz, enabling tight system timing budgets
Supply Voltages	VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O) - requires dual 3.3V rails with independent decoupling
Operating Temperature	-40°C to +85°C - qualified for industrial-grade embedded systems
Burst Mode	Linear or interleaved 4-word burst (LBO-selectable) - eliminates external address sequencing logic
Power-Down Current	IZZ ≤ 70mA - reduces active power by >80% during sleep mode

Pinout & Package

Packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pinout validated for 256K × 36 configuration per PKG100 drawing (Rev. 6.42, p.5).

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous inputs latched on rising CLK edge with ADSP/ADSC; A0–A17 used for 256K×36 addressing
CLK	System Clock	Rising-edge-triggered master timing reference for all registers and burst counter
GW, BWE, BW1–BW4	Write Control	GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each enable one 9-bit byte (I/O0–7/I/OP1, etc.)
ADV, ADSP, ADSC	Burst Address Control	ADV advances internal burst counter; ADSP (processor) and ADSC (cache) load address register synchronously
LBO	Burst Order Select	Asynchronous static input: LOW = linear burst, HIGH = interleaved burst (per JEDEC)
ZZ	Sleep Mode Enable	Asynchronous HIGH disables internal clock and reduces current to IZZ ≤ 70mA
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional bus; registered input/output paths; all pins driven only when OE = LOW and chip selected
OE	Output Enable	Asynchronous control: LOW enables output drivers; HIGH forces high-impedance state regardless of clock

Key Features

Feature	Design Value
Pipelined Outputs	First read data appears on next CLK rising edge - eliminates wait states in CPU/cache interfaces
Single-Cycle Deselect	Chip deactivation completes within one clock cycle - enables rapid bank switching in multi-SRAM systems
Self-Timed Write Cycle	Internal timing logic eliminates need for external write pulse generation - simplifies controller design
Byte-Write Capability	Four independent 9-bit write enables (BW1–BW4) allow partial-word updates without read-modify-write overhead
Industrial Temperature Range	Rated -40°C to +85°C - suitable for base station, router, and industrial automation environments

Applications

High-Speed Cache Buffer	Network Packet Buffer
Use Scenario: L2/L3 cache between processor and DRAM in telecom line cards. IC Role / Device Role / Timing Role: Synchronous SRAM providing low-latency, burst-mode data storage with pipelined read outputs. Use Value: 150MHz operation and 3.8ns tCD reduce memory access latency by >30% vs. asynchronous SRAMs in same footprint.	Use Scenario: Temporary storage for packet headers and payloads in Ethernet switches. IC Role / Device Role / Timing Role: Burst-capable buffer interfacing with MAC controllers using ADV/ADSP handshaking. Use Value: Linear/interleaved burst modes align with IEEE 802.3 frame structures, minimizing bus turnaround overhead.
Baseband Processor Memory	Industrial PLC Data Buffer
Use Scenario: Real-time data exchange between DSP cores and FPGA accelerators in wireless infrastructure. IC Role / Device Role / Timing Role: High-reliability SRAM with ZZ sleep mode for power-gated subsystems. Use Value: IZZ ≤ 70mA in sleep mode extends uptime in fanless, thermally constrained enclosures.	Use Scenario: Deterministic I/O data staging in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Industrial-temp SRAM supporting single-cycle deselect for precise timing-critical I/O updates. Use Value: Guaranteed -40°C to +85°C operation ensures stable timing margins across factory floor thermal swings.

High-Speed Cache Buffer

Network Packet Buffer

Use Scenario: L2/L3 cache between processor and DRAM in telecom line cards.

IC Role / Device Role / Timing Role: Synchronous SRAM providing low-latency, burst-mode data storage with pipelined read outputs.

Use Value: 150MHz operation and 3.8ns tCD reduce memory access latency by >30% vs. asynchronous SRAMs in same footprint.

Use Scenario: Temporary storage for packet headers and payloads in Ethernet switches.

IC Role / Device Role / Timing Role: Burst-capable buffer interfacing with MAC controllers using ADV/ADSP handshaking.

Use Value: Linear/interleaved burst modes align with IEEE 802.3 frame structures, minimizing bus turnaround overhead.

Baseband Processor Memory

Industrial PLC Data Buffer

Use Scenario: Real-time data exchange between DSP cores and FPGA accelerators in wireless infrastructure.

IC Role / Device Role / Timing Role: High-reliability SRAM with ZZ sleep mode for power-gated subsystems.

Use Value: IZZ ≤ 70mA in sleep mode extends uptime in fanless, thermally constrained enclosures.

Use Scenario: Deterministic I/O data staging in programmable logic controllers with deterministic scan cycles.

IC Role / Device Role / Timing Role: Industrial-temp SRAM supporting single-cycle deselect for precise timing-critical I/O updates.

Use Value: Guaranteed -40°C to +85°C operation ensures stable timing margins across factory floor thermal swings.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV18	512K × 18-bit organization; 166MHz max; different pinout (119-ball BGA only)	Requires PCB redesign; lacks TQFP option and LBO-configurable burst order	Select when higher density and maximum speed are prioritized over package compatibility
AS7C3256B	256K × 32-bit; 150MHz; 3.3V core/I/O; no burst mode or pipelined outputs	Supports basic SRAM interface only; no ADV/ADSP/BWx control logic	Select for cost-sensitive designs where burst performance is not required

Compared with CY7C1362BV18 and AS7C3256B, the 71V67603S150BGG uniquely delivers 256K × 36-bit density in TQFP-100 with JEDEC-compliant burst modes, pipelined outputs, and industrial temperature rating - making it optimal for space-constrained, high-throughput embedded buffers requiring minimal controller overhead.

Availability

71V67603S150BGG is available at Aetrix Electronics and suitable for high-speed cache buffers, network packet buffers, and industrial PLC data staging requiring stable component supply across extended temperature ranges.

Supply support for 71V67603S150BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions.

The 71V67603S150BGG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-oriented buffering in networking, telecom, and industrial real-time systems.

FAQ

What is the memory organization supported by the 71V67603S150BGG?

The 71V67603S150BGG is organized as 256K × 36 bits (9Mbit) in its default configuration. It also supports 512K × 18-bit operation through pin-strapping and address mapping - verified in the functional block diagram and PKG100 pin configurations for both memory modes.

Does the 71V67603S150BGG support burst mode, and how is it configured?

Yes, the 71V67603S150BGG supports 4-word burst mode with selectable linear or interleaved sequences. Configuration is controlled by the LBO pin: LOW selects linear burst, HIGH selects interleaved burst. This is explicitly defined in the Interleaved and Linear Burst Sequence Tables and validated in AC timing waveforms.

What package type and pin count does the 71V67603S150BGG use?

The 71V67603S150BGG uses a JEDEC-standard 100-pin thin quad flatpack (TQFP) with 14mm × 20mm body and 0.5mm lead pitch. Pinout is fully documented for the 256K × 36 configuration in Figure 510 drw 02 (Rev. 6.42, p.5).

How does the 71V67603S150BGG handle power management?

The 71V67603S150BGG implements three power states: active (IDD ≤ 325mA at 150MHz), CMOS standby (ISB1 ≤ 70mA), and full sleep mode (IZZ ≤ 70mA) activated by the asynchronous ZZ input. Sleep mode retains data while minimizing current draw - confirmed in DC Electrical Characteristics Table 09.

What are the key timing parameters for read operations at 150MHz?

At 150MHz, the 71V67603S150BGG guarantees tCD ≤ 3.8ns (clock-to-valid-data), tOE ≤ 3.8ns (output enable access), and tCHZ ≤ 3.8ns (clock-high-to-output-high-Z). These values are specified in AC Electrical Characteristics Table 16 and validated in Pipelined Read Cycle waveform (Figure 5310 drw 08).

71V67603S150BGG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 150 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V67603S150BGG FAQ

1.How can I place an order for 71V67603S150BGG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67603S150BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67603S150BGG reliable?

The price and inventory of 71V67603S150BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S150BGG is usually 5 days.

3.What payment methods are accepted for 71V67603S150BGG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67603S150BGG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V67603S150BGG?

71V67603S150BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67603S150BGG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67603S150BGG?

For technical support, including 71V67603S150BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S150BGG requirements.

6.How does Aetrix verify that 71V67603S150BGG is sourced from the original manufacturer or authorized distributors?

All 71V67603S150BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S150BGG meets industry standards.

7.What is the process for return or replacement of 71V67603S150BGG?

All 71V67603S150BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S150BGG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67603S150BGG part is unused and in its original packaging.

Return procedure for 71V67603S150BGG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

2026-08-21 What Is an LED Driver? Types, Circuits, Dimming, and Selection

An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…