Renesas 71V67603S150BGG8

Overview

71V67603S150BGG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports interleaved/linear burst modes via LBO input, features self-timed write with global/byte write controls, and operates across industrial temperature range (–40°C to +85°C). It is used in high-speed networking packet buffers and real-time DSP memory subsystems.

For engineers reviewing the 71V67603S150BGG8 datasheet, 71V67603S150BGG8 pinout, 71V67603S150BGG8 application, or 71V67603S150BGG8 equivalent, key selection criteria include burst mode timing compliance, ZZ sleep current (≤70µA), VDDQ/VDD separation, and 119-ball BGA (BGG) package compatibility with JEDEC MO-207AB footprint.

Technical Context

The 71V67603S150BGG8 implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV=LOW and selects linear or interleaved sequences based on static LBO level-no reconfiguration during operation. Pipelined output registers deliver first data one clock cycle after address latch, enabling sustained 150MHz throughput.

Write operations are fully self-timed: GW or BWE/BWx assertion triggers internal timing logic that completes writes without external wait-state generation. Power management includes asynchronous ZZ-controlled sleep mode (IZZ ≤70µA) and CMOS standby (ISB1 ≤70mA), with separate VDD (core) and VDDQ (I/O) supplies supporting mixed-voltage system interfacing.

Key Specifications

Pinout & Package

71V67603S150BGG8 is packaged in a 119-ball fine-pitch BGA (BGG119) per JEDEC MO-207AB, with exposed thermal pad and 0.8mm ball pitch. Pin functions are defined for 256K×36 configuration; unused pins (e.g., BW3/BW4) are NC in 512K×18 variants but retained as no-connect in this part.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with 71V67603S150BGG8, CY7C1362BV18-167BZI offers higher density at faster speed but lacks configurable burst order and sleep mode, while AS7C33128PFS-15BIN trades density and advanced power features for simpler packaging and lower cost in non-battery-critical applications.

Availability

71V67603S150BGG8 is available at Aetrix Electronics and suitable for networking packet buffers, DSP real-time memory, industrial PLC data logging, and automotive ADAS sensor fusion requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V67603S150BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly IDT) is a global semiconductor leader specializing in microcontrollers, analog, power management, and memory solutions for industrial, automotive, and communications markets.

The 71V67603S150BGG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in real-time networking and signal processing equipment.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67603S150BGG8?

The 71V67603S150BGG8 is rated for 150MHz operation with a guaranteed clock access time of 3.8ns. This specification applies across the full industrial temperature range (–40°C to +85°C) and under worst-case VDD/VDDQ conditions (3.135V to 3.465V). The device also supports 166MHz (3.5ns) and 133MHz (4.2ns) speed grades, but the 'S150' suffix confirms its 150MHz qualification.

Does the 71V67603S150BGG8 support both linear and interleaved burst modes, and how is it configured?

Yes, the 71V67603S150BGG8 supports both linear and interleaved burst modes via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). LBO is a static configuration pin and must remain stable during burst operation-changes mid-burst are undefined and prohibited.

What is the function of the ZZ pin on the 71V67603S150BGG8, and what power savings does it provide?

The ZZ pin on the 71V67603S150BGG8 is an asynchronous sleep mode enable. When asserted HIGH, it gates the internal clock and reduces total supply current to ≤70µA (IZZ) while retaining full data integrity. This enables instantaneous low-power entry without clock-stopping coordination, making it ideal for battery-backed data loggers and energy-aware network edge devices where the 71V67603S150BGG8 maintains state during intermittent operation.

How does the 71V67603S150BGG8 handle byte-level writes, and what control signals are required?

The 71V67603S150BGG8 supports granular byte writes using BWE (Byte Write Enable) and four BWx signals (BW1–BW4), each controlling a 9-bit data segment (I/O0–7+I/OP1, etc.). To execute a byte write, BWE must be LOW on the rising CLK edge, and at least one BWx must be LOW. Global Write (GW) overrides byte controls-if GW is LOW, all 36 bits are written regardless of BWx states-ensuring deterministic behavior in mixed-write scenarios.

What package type and ball count does the 71V67603S150BGG8 use, and is it JEDEC-compliant?

The 71V67603S150BGG8 uses a 119-ball fine-pitch BGA package designated BGG119, conforming to JEDEC MO-207AB mechanical specifications. It features a 0.8mm ball pitch, exposed thermal pad, and standardized footprint-enabling drop-in compatibility with automated BGA assembly lines and thermal vias for industrial-grade reliability. The 'BGG' suffix explicitly denotes this 119-ball variant.