Renesas 71V67603S150BGGI

Overview

71V67603S150BGGI from IDT (now Renesas) is a 256K × 36-bit or 512K × 18-bit synchronous SRAM with pipelined outputs, single-cycle deselect, and 3.3V core/I/O supply. It delivers 150MHz operation with 3.8ns clock access time, supports linear/interleaved burst modes via LBO input, and features self-timed write with global/byte-level write control. It is used in high-speed networking buffers and cache subsystems requiring deterministic latency.

For engineers reviewing the 71V67603S150BGGI datasheet, 71V67603S150BGGI pinout, 71V67603S150BGGI application, or 71V67603S150BGGI equivalent, key selection criteria include burst mode timing compliance, ZZ sleep current (≤70µA), pipelined read latency, byte-write enable granularity, and compatibility with 100-pin TQFP or 119-ball BGA footprints.

Technical Context

This SRAM implements a synchronous interface with dual chip-select architecture (CS0 active-high, CS1 active-low), pipelined output registers triggered on CLK rising edge, and an internal 2-bit burst counter that advances on ADV low. Address latching is controlled by ADSP (processor status) or ADSC (cache controller status), both synchronous active-low inputs.

Write operations support four configurations: global write (GW low), byte writes (BWE low + BW1–BW4), or combinations thereof. The LBO pin statically selects linear vs. interleaved burst order, and ZZ enables full-sleep mode with gated clock and ≤70µA supply current at industrial temperature.

Key Specifications

Pinout & Package

71V67603S150BGGI is packaged in a JEDEC-standard 119-ball fine-pitch BGA (BGG119), 1.0mm ball pitch, 14mm × 14mm body size. Pinout conforms to IDT's BG119 footprint for 256K × 36 configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-166AXC and AS7C33256P-15JIN, the 71V67603S150BGGI uniquely combines BGA packaging, ZZ sleep mode, and hardware-managed burst sequencing-enabling lower system power, smaller PCB area, and reduced FPGA logic overhead in new designs.

Availability

71V67603S150BGGI is available at Aetrix Electronics and suitable for high-speed networking equipment, 5G baseband processors, industrial PLCs, and radar signal processing systems requiring stable component supply across extended product lifecycles.

Supply support for 71V67603S150BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power management, and high-performance memory solutions for industrial, automotive, and communications markets.

The 71V67603S150BGGI belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic latency, burst efficiency, and low-power sleep in infrastructure-class real-time systems.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67603S150BGGI?

The 71V67603S150BGGI operates up to 150MHz with a guaranteed clock-to-data access time (tCD) of 3.8ns. This specification applies across the full industrial temperature range (-40°C to +85°C) and 3.3V ±5% supply conditions, ensuring timing predictability in thermally demanding environments like base station radios.

Does the 71V67603S150BGGI support both linear and interleaved burst modes, and how is this selected?

Yes, the 71V67603S150BGGI supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven low, the device executes linear bursts (00→01→10→11); when high, it uses interleaved order (00→01→11→10). LBO is a static input and must remain stable during burst operation.

What is the function of the ZZ pin on the 71V67603S150BGGI, and what power savings does it provide?

The ZZ pin on the 71V67603S150BGGI enables full-sleep mode when driven high. In this state, the internal clock is gated and supply current drops to ≤70µA (industrial grade), preserving data while minimizing system power. Recovery time (tZZR) is 100ns, allowing rapid wake-up without initialization overhead.

How many byte-write enable signals does the 71V67603S150BGGI support, and what is their granularity?

The 71V67603S150BGGI supports four individual byte-write enables (BW1–BW4), each controlling a 9-bit segment of the 36-bit data bus: BW1 → I/O0–I/O7 + I/OP1, BW2 → I/O8–I/O15 + I/OP2, BW3 → I/O16–I/O23 + I/OP3, BW4 → I/O24–I/O31 + I/OP4. This enables precise partial-word updates without read-modify-write cycles.

Which package types are supported by the 71V67603S150BGGI, and what does the 'BGGI' suffix indicate?

The 71V67603S150BGGI is offered exclusively in the 119-ball fine-pitch BGA (BGG119) package, 14mm × 14mm, 1.0mm ball pitch. The 'BGGI' suffix denotes this specific industrial-grade BGA variant-distinct from TQFP (e.g., 71V67603S150BG) or fBGA variants-with guaranteed operation from -40°C to +85°C.