Renesas 71V67603S150BGGI8

Overview

71V67603S150BGGI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports interleaved/linear burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW4), and operates across industrial temperature range (−40°C to +85°C). Used in high-speed networking buffers and cache subsystems requiring deterministic latency.

For engineers reviewing the 71V67603S150BGGI8 datasheet, 71V67603S150BGGI8 pinout, 71V67603S150BGGI8 application, or 71V67603S150BGGI8 equivalent, key selection criteria include burst mode timing compliance, ZZ-controlled sleep current (≤70mA), VDDQ = 3.3V ±5% I/O supply tolerance, and 165-ball fine-pitch BGA (BGG) package compatibility with JEDEC MO-245 standard.

Technical Context

This device implements a synchronous, clock-driven architecture with registered address, data, and control inputs-triggered on the rising edge of CLK. Its internal burst counter generates four consecutive addresses from a single external address, with sequence order determined by the static LBO pin state (linear vs. interleaved).

The memory array is organized as 256K × 36 bits (9Mbit), supporting self-timed write cycles using GW, BWE, and individual BWx signals. Pipelined output registers deliver first data one clock cycle after address latching, enabling sustained 150MHz throughput without wait states in burst-read scenarios.

Key Specifications

Pinout & Package

Packaged in a 165-ball fine-pitch ball grid array (fBGA), JEDEC MO-245 compliant, with 1.0mm ball pitch and 13mm × 13mm body size. Pinout validated per BGG119/BQG165 footprint documentation for 256K × 36 configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-167AXC and AS7C3256A-15TIN, the 71V67603S150BGGI8 uniquely delivers 36-bit width, LBO-selectable burst sequencing, and industrial-grade ZZ sleep mode in a space-efficient 165-ball fBGA-enabling higher density and lower system power in bandwidth-constrained embedded systems.

Availability

71V67603S150BGGI8 is available at Aetrix Electronics and suitable for networking packet buffers, industrial PLC data caches, telecom baseband processor caches, and avionics display frame buffers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V67603S150BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power, and memory solutions for automotive, industrial, and infrastructure markets.

The 71V67603S150BGGI8 belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic latency, burst efficiency, and industrial reliability in mission-critical embedded systems.

FAQ

What is the maximum supported clock frequency for the 71V67603S150BGGI8?

The 71V67603S150BGGI8 is rated for 150MHz operation, corresponding to a 6.7ns clock cycle time. This is confirmed by AC Electrical Characteristics Table 16 in the datasheet, where tCYC min = 6.7ns applies to commercial and industrial grades. The "S150" suffix explicitly denotes this speed grade, and operation beyond 150MHz violates guaranteed timing margins.

Does the 71V67603S150BGGI8 support both linear and interleaved burst modes?

Yes, the 71V67603S150BGGI8 supports both burst modes via the LBO (Linear Burst Order) pin. When LBO = LOW, it executes linear burst sequences (e.g., A0→A1→A2→A3); when LBO = HIGH, it performs interleaved bursts (e.g., A0→A2→A1→A3). This behavior is defined in Tables 14 and 15 of the datasheet and applies to the 256K × 36 configuration.

What package type does the 71V67603S150BGGI8 use, and is it RoHS compliant?

The 71V67603S150BGGI8 uses a 165-ball fine-pitch BGA (fBGA) package designated BGG, per JEDEC MO-245. The "I8" suffix indicates industrial temperature range (−40°C to +85°C) and lead-free/RoHS-compliant construction. Pinout and mechanical dimensions are fully specified in Drawing 5310 tbl 17a for the 256K × 36 variant.

How does the ZZ pin function in the 71V67603S150BGGI8?

The ZZ pin is an asynchronous high-active input that places the 71V67603S150BGGI8 into full sleep mode, reducing supply current to ≤70mA (IZZ). In sleep mode, the internal clock is gated, outputs go high-Z, and data is retained. Recovery requires tZZR ≥ 100ns after ZZ returns LOW, as specified in Table 16.

Can the 71V67603S150BGGI8 operate with separate core and I/O voltage supplies?

Yes, the 71V67603S150BGGI8 requires two independent 3.3V supplies: VDD (core, 3.3V ±5%) and VDDQ (I/O, 3.3V ±5%). These may be derived from the same regulator if ripple and noise are controlled below 50mV p-p, but decoupling must be implemented separately per supply rail as specified in the Recommended Operating Conditions table.