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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V67603S150BGI

Name: 71V67603S150BGI
Brand: Renesas
SKU: 71V67603S150BGI
Price: 2.40 USD
Availability: InStock
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Part No.:: 71V67603S150BGI

Manufacturer:: Renesas

Category:: Memory

Package:: 119-BGA

Datasheet:: 71V67603S150BGI.pdf

Description:: IC SRAM 9MBIT PAR 150MHZ 119PBGA

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Product details

Overview

71V67603S150BGI from IDT (now Renesas) is a 256K × 36-bit or 512K × 18-bit 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and burst counter logic. It delivers 150MHz operation at 3.8ns clock access time, supports linear/interleaved burst modes via LBO input, and features global write (GW), byte write enables (BW1–BW4), and asynchronous sleep mode (ZZ). It is used in high-speed networking buffers, FPGA co-processor memory, and telecom line-card data caches.

For engineers reviewing the 71V67603S150BGI datasheet, 71V67603S150BGI pinout, 71V67603S150BGI application, or 71V67603S150BGI equivalent, key selection criteria include burst-mode timing compliance, 3.3V I/O compatibility, TQFP-100 package footprint, self-timed write support, and industrial temperature range (-40°C to +85°C) validation.

Technical Context

The 71V67603S150BGI implements a synchronous dual-register architecture: address, data, and control signals are registered on the rising edge of CLK, enabling precise timing predictability. Its internal burst counter advances on ADV=LOW and selects sequence order (linear or interleaved) based on static LBO state - no reconfiguration during operation.

Burst read cycles deliver four consecutive words per address with pipelined output staging: first word appears after one clock cycle, subsequent words align to successive CLK edges. Write operations support full-word (via GW) or per-byte (via BWE + BW1–BW4) granularity, with self-timed completion independent of external timing control.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (or 512K × 18-bit) - selectable configuration determines data bus width and addressing depth for system-level memory mapping.
Clock Frequency	150MHz - guarantees 6.7ns minimum clock cycle time (tCYC), enabling deterministic timing in high-throughput data pipelines.
Access Time	3.8ns clock-to-data (tCD) - defines maximum latency from CLK rising edge to valid output, critical for meeting setup/hold margins in synchronous systems.
Supply Voltages	VDD = 3.3V ±5%, VDDQ = 3.3V ±5% - separate core and I/O rails allow independent noise management and interface voltage alignment.
Operating Temperature	-40°C to +85°C - validated industrial-grade thermal performance suitable for base station, industrial controller, and automotive infotainment applications.
Power Consumption	ISB1 = 70mA (standby), IZZ = 70mA (full sleep) - low-power deselection states reduce system-level idle current without losing data retention.
Burst Mode Control	LBO pin selects linear or interleaved sequence - determines address increment pattern for cache-line fetches, directly impacting memory controller logic design.

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead-free and RoHS-compliant. Pinout optimized for signal integrity: dedicated VDD/VSS pairs per quadrant, grouped I/O banks with adjacent VDDQ/VSS decoupling, and isolated control pins (CLK, ADV, ADSP, ADSC) routed away from high-slew data paths.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous inputs latched on rising CLK edge when ADSP or ADSC is active; define 19-bit address space for 512K×18 mode (A0–A18) or 18-bit for 256K×36 (A0–A17).
CLK	System Clock Input	Primary timing reference; all synchronous registers (address, data, control) trigger on rising edge - dictates maximum system throughput and jitter tolerance.
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 36-bit writes; BWE gates byte enables; BW1–BW4 select 9-bit subwords (I/O0–7/I/OP1, etc.) - enables fine-grained memory updates without read-modify-write overhead.
ADV, ADSP, ADSC	Burst Address Control	ADSP/ADSC load initial address; ADV advances internal burst counter - together they implement cache-line burst initiation and continuation without external address generation.
LBO	Burst Order Select	Static input (LOW = linear, HIGH = interleaved); sets burst address sequence at power-up - must remain stable during operation to avoid undefined counter behavior.
ZZ	Asynchronous Sleep Enable	Drives internal clock gating when HIGH; reduces supply current to 70mA while retaining data - enables rapid entry/exit from low-power states without reset or reinitialization.
I/O0–I/O31, I/OP1–I/OP4	Data I/O Pins	36-bit bidirectional synchronous bus; registered input/output paths ensure clean timing margins; I/OP1–I/OP4 are parity bits for error detection in mission-critical systems.

Key Features

Feature	Design Value
Pipelined Outputs	First burst word available after one CLK cycle; subsequent words aligned to next three CLK edges - eliminates pipeline stalls in sequential memory accesses.
Single-Cycle Deselect	Chip disables output drivers and enters standby within one clock cycle of CE/CS deassertion - prevents bus contention during rapid context switches.
Self-Timed Write Cycle	Internal logic completes write without external timing strobes; duration determined by device propagation - simplifies controller design and improves write reliability across voltage/temperature.
3.3V Core & I/O Supplies	Dual-rail architecture isolates core logic noise from I/O signaling; allows direct interfacing with 3.3V FPGAs, ASICs, and processors without level shifters.
Industrial Temperature Range	Validated operation from -40°C to +85°C - ensures functional stability in uncontrolled environments like outdoor telecom cabinets or factory-floor PLCs.

Applications

Networking Buffer Memory	FPGA Co-Processor Cache
Use Scenario: High-speed packet buffering in Ethernet switch ASICs where line-rate forwarding requires zero-wait-state memory access. IC Role / Device Role / Timing Role: Primary burst-access SRAM providing 4-word cache lines to packet classification engines with pipelined read latency. Use Value: 150MHz clock rate and 3.8ns tCD enable sustained 600MB/s bandwidth, matching 10Gbps PHY data rates without bottlenecking.	Use Scenario: Local instruction/data cache for Xilinx Virtex or Intel Stratix FPGA-based digital signal processing subsystems. IC Role / Device Role / Timing Role: Synchronous memory mapped into FPGA's AXI or Avalon-MM bus, supporting burst reads/writes with single-cycle deselect. Use Value: Pipelined outputs and self-timed writes eliminate FPGA logic overhead for timing closure, reducing synthesis iteration time and resource usage.
Telecom Line Card Data Store	Industrial Motion Controller Buffer
Use Scenario: Real-time frame assembly/disassembly in optical transport network (OTN) line cards handling OC-192/STM-64 traffic. IC Role / Device Role / Timing Role: Dual-port accessible memory (via CE/CS partitioning) storing incoming/outgoing frame payloads with burst-aligned access. Use Value: Linear/interleaved burst mode (LBO-selectable) matches SONET/SDH frame structure, minimizing address translation logic in firmware.	Use Scenario: Position command buffering in CNC machine controllers requiring deterministic jitter-free memory access for servo loop timing. IC Role / Device Role / Timing Role: Deterministic-latency SRAM interfaced to real-time microcontroller via parallel bus, supporting interrupt-driven buffer updates. Use Value: Industrial temperature rating (-40°C to +85°C) and ZZ sleep mode ensure reliable operation in motor-adjacent enclosures with ambient heat and EMI.

Networking Buffer Memory

FPGA Co-Processor Cache

Use Scenario: High-speed packet buffering in Ethernet switch ASICs where line-rate forwarding requires zero-wait-state memory access.

IC Role / Device Role / Timing Role: Primary burst-access SRAM providing 4-word cache lines to packet classification engines with pipelined read latency.

Use Value: 150MHz clock rate and 3.8ns tCD enable sustained 600MB/s bandwidth, matching 10Gbps PHY data rates without bottlenecking.

Use Scenario: Local instruction/data cache for Xilinx Virtex or Intel Stratix FPGA-based digital signal processing subsystems.

IC Role / Device Role / Timing Role: Synchronous memory mapped into FPGA's AXI or Avalon-MM bus, supporting burst reads/writes with single-cycle deselect.

Use Value: Pipelined outputs and self-timed writes eliminate FPGA logic overhead for timing closure, reducing synthesis iteration time and resource usage.

Telecom Line Card Data Store

Industrial Motion Controller Buffer

Use Scenario: Real-time frame assembly/disassembly in optical transport network (OTN) line cards handling OC-192/STM-64 traffic.

IC Role / Device Role / Timing Role: Dual-port accessible memory (via CE/CS partitioning) storing incoming/outgoing frame payloads with burst-aligned access.

Use Value: Linear/interleaved burst mode (LBO-selectable) matches SONET/SDH frame structure, minimizing address translation logic in firmware.

Use Scenario: Position command buffering in CNC machine controllers requiring deterministic jitter-free memory access for servo loop timing.

IC Role / Device Role / Timing Role: Deterministic-latency SRAM interfaced to real-time microcontroller via parallel bus, supporting interrupt-driven buffer updates.

Use Value: Industrial temperature rating (-40°C to +85°C) and ZZ sleep mode ensure reliable operation in motor-adjacent enclosures with ambient heat and EMI.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371DV33-166AXC	166MHz max, 3.5ns tCD, 256K×36 organization only, no LBO pin - fixed linear burst mode.	Lacks interleaved burst capability and flexible 512K×18 configuration; requires redesign if burst order flexibility is needed.	Select when maximum speed (166MHz) is prioritized over burst-mode configurability and dual-organization support.
AS7C33256PFSIG	133MHz max, 4.2ns tCD, 3.3V-only supply (no VDDQ separation), TQFP-100 package, no ZZ sleep mode.	Higher access latency and no low-power sleep state; lacks separate I/O rail for noise isolation in mixed-signal designs.	Select for cost-sensitive industrial applications where 133MHz bandwidth suffices and sleep mode is unnecessary.

Compared with CY7C1371DV33-166AXC and AS7C33256PFSIG, the 71V67603S150BGI uniquely combines 150MHz operation with dual memory configurations, configurable burst order (LBO), and full-sleep power gating - making it optimal for systems requiring both performance headroom and thermal/power adaptability.

Availability

71V67603S150BGI is available at Aetrix Electronics and suitable for networking buffer memory, FPGA co-processor cache, telecom line card data store, industrial motion controller buffer, and high-reliability embedded computing applications requiring stable component supply across extended product lifecycles.

Supply support for 71V67603S150BGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for communications, computing, and industrial markets.

The 71V67603S150BGI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in infrastructure equipment where deterministic timing and industrial reliability are mandatory.

FAQ

What memory configurations does the 71V67603S150BGI support?

The 71V67603S150BGI supports two pin-compatible memory organizations: 256K × 36-bit (requiring A0–A17 address lines) and 512K × 18-bit (requiring A0–A18). Configuration is determined by external address decoding and signal routing - no internal mode register or initialization sequence is required. Both configurations share identical timing, packaging, and control logic in the 71V67603S150BGI.

How does the LBO pin affect burst behavior in the 71V67603S150BGI?

The LBO pin on the 71V67603S150BGI statically selects burst address order: LOW enables linear sequence (00→01→10→11), HIGH enables interleaved sequence (00→01→11→10). It must be held stable before and during burst operation - changing LBO mid-burst causes undefined address counter behavior. The 71V67603S150BGI does not support dynamic LBO switching during active memory access.

What is the role of the ZZ pin in the 71V67603S150BGI, and how does it differ from standard standby?

The ZZ pin on the 71V67603S150BGI enables full sleep mode: when driven HIGH, it internally gates the CLK path and reduces supply current to 70mA (IZZ) while maintaining data retention. Unlike standard standby (ISB1), which keeps clocks active and consumes 70mA only when deselected, ZZ sleep halts all internal timing - allowing faster wake-up than full power-down but requiring no reinitialization. This behavior is confirmed for the 71V67603S150BGI across its industrial temperature range.

Does the 71V67603S150BGI support byte-write operations, and how are they implemented?

Yes, the 71V67603S150BGI supports granular byte writes using BWE (byte write enable) and BW1–BW4 (individual byte write selects). When BWE is LOW, active BWx signals gate corresponding 9-bit data bytes (e.g., BW1 controls I/O0–7 and I/OP1). All outputs are disabled during byte writes - ensuring atomic updates without read-modify-write cycles. This functionality is fully documented in the 71V67603S150BGI synchronous write truth table and verified across all supported frequencies.

What package type and pin count does the 71V67603S150BGI use, and is it compatible with standard PCB footprints?

The 71V67603S150BGI uses a JEDEC-standard 100-pin thin quad flatpack (TQFP) with 0.5mm pitch, 14mm × 20mm body size, and exposed pad option. Its pinout matches IDT's PKG100 mechanical specification and is compatible with industry-standard TQFP-100 footprints used for similar high-speed SRAMs. Pin 14 (VDD/NC) and pin 64 (ZZ) have defined floating tolerances per datasheet - simplifying layout for legacy board reuse.

71V67603S150BGI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 119-BGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 150 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 119-PBGA (14x22)

71V67603S150BGI FAQ

1.How can I place an order for 71V67603S150BGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67603S150BGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67603S150BGI reliable?

The price and inventory of 71V67603S150BGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S150BGI is usually 5 days.

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Once your 71V67603S150BGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67603S150BGI?

For technical support, including 71V67603S150BGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S150BGI requirements.

6.How does Aetrix verify that 71V67603S150BGI is sourced from the original manufacturer or authorized distributors?

All 71V67603S150BGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S150BGI meets industry standards.

7.What is the process for return or replacement of 71V67603S150BGI?

All 71V67603S150BGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S150BGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67603S150BGI part is unused and in its original packaging.

Return procedure for 71V67603S150BGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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