Renesas 71V67603S150BGI8

Overview

71V67603S150BGI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports interleaved/linear burst modes via LBO input, features self-timed write with global and byte-level write control, and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking buffers and cache subsystems requiring deterministic latency.

For engineers reviewing the 71V67603S150BGI8 datasheet, 71V67603S150BGI8 pinout, 71V67603S150BGI8 application, or 71V67603S150BGI8 equivalent, key selection criteria include burst mode timing compliance, ZZ sleep current (≤70µA), VDDQ/VDD separation, TQFP-100 package compatibility, and 36-bit data width support for legacy bus architectures.

Technical Context

This SRAM implements a synchronous interface with dual chip-select logic (CS0 active-high, CS1 active-low), pipelined read outputs synchronized to CLK rising edge, and burst address generation driven by ADV and LBO. The internal 4-word burst counter advances on ADV low and wraps per linear or interleaved sequence defined at power-up.

Write operations are controlled synchronously via GW (global), BWE (byte enable gate), and BW1–BW4 (per-byte selects), with OE asynchronous for output tri-state control. Power management includes ZZ-driven full-sleep mode (IZZ ≤70µA) and CMOS standby (ISB1 ≤70µA), both requiring no external sequencing.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pin 1 marked via corner cutout; top-side marking includes "71V67603S150BGI8" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-167AXC and AS7C3256A-15TIN, the 71V67603S150BGI8 uniquely delivers industrial-temperature-rated burst-mode performance in a rework-friendly TQFP package with ultra-low sleep current - making it optimal for field-deployable telecom and industrial hardware.

Availability

71V67603S150BGI8 is available at Aetrix Electronics and suitable for network packet buffering, baseband processor caching, and industrial PLC backplane applications requiring stable component supply across extended product lifecycles.

Supply support for 71V67603S150BGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V67603S150BGI8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for deterministic-latency applications in networking equipment, wireless base stations, and industrial control systems.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67603S150BGI8?

The 71V67603S150BGI8 is rated for 150MHz operation with a guaranteed clock-to-data access time (tCD) of 3.8ns. This specification applies across the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions. The device also supports 166MHz (3.5ns) and 133MHz (4.2ns) speed grades, but the 'S150' suffix confirms its 150MHz qualification. All timing parameters are measured with pipelined output architecture.

How does the burst mode function work on the 71V67603S150BGI8, and what controls the sequence order?

The 71V67603S150BGI8 implements a 4-word synchronous burst mode initiated by ADV low. The sequence order-linear (00→01→10→11) or interleaved (00→01→11→10)-is selected by the LBO pin: LBO = VSS selects linear, LBO = VDD selects interleaved. LBO is a static input and must not change during operation. Burst addressing is fully internal; only the first address is presented externally, reducing bus traffic by 75% per burst transaction.

What are the power management capabilities of the 71V67603S150BGI8, and how is sleep mode activated?

The 71V67603S150BGI8 supports three low-power states: CMOS standby (ISB1 ≤70µA), clock-running standby (ISB2 ≤175µA), and full sleep mode (IZZ ≤70µA). Sleep mode is activated asynchronously by driving the ZZ pin high; this internally gates the clock and reduces core current without requiring external reset or configuration. Recovery time (tZZR) is 100ns, enabling rapid wake-up for burst-oriented traffic patterns.

Can the 71V67603S150BGI8 be used in both 256K × 36 and 512K × 18 configurations, and how is this selected?

Yes, the 71V67603S150BGI8 supports both 256K × 36 and 512K × 18 organizations. Configuration is determined by pin strapping during power-up: for 256K × 36, A18 is used as an address bit; for 512K × 18, A18 is unused and tied appropriately. The pinout differs slightly between configurations - e.g., BW3/BW4 are active in 256K × 36 mode but NC in 512K × 18 mode - requiring careful schematic review per target density.

What is the significance of separate VDD and VDDQ supplies on the 71V67603S150BGI8, and are they required to be equal?

VDD powers the core logic (address registers, burst counter, control logic), while VDDQ powers the I/O buffers only. Both are specified at 3.3V ±5%, and must be within 0.15V of each other during operation per datasheet absolute maximum ratings. Separation allows independent decoupling and noise isolation - critical in mixed-signal systems where digital switching noise could corrupt analog-adjacent I/O. They are not interchangeable; connecting VDDQ to VDD violates the 0.15V differential limit.