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Renesas 71V67603S150BQ

Name: 71V67603S150BQ
Brand: Renesas
SKU: 71V67603S150BQ
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67603S150BQ

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V67603S150BQ.pdf

Description:: IC SRAM 9MBIT PAR 165CABGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

71V67603S150BQ from IDT (now Renesas) is a 256K × 36-bit or 512K × 18-bit 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and burst-mode operation. It delivers 150MHz clock speed with 3.8ns clock access time, supports linear/interleaved burst via LBO pin, and features global write (GW), byte write enable (BWE), and sleep mode (ZZ). It is used in high-speed networking buffers, cache memory subsystems, and FPGA co-processor data staging.

For engineers reviewing the 71V67603S150BQ datasheet, 71V67603S150BQ pinout, 71V67603S150BQ application, or 71V67603S150BQ equivalent, key selection criteria include burst address counter behavior, pipelined read timing (tCD = 3.8ns), self-timed write control, 3.3V core/I/O supply separation (VDD/VDDQ), and TQFP-100 package compatibility with industrial temperature range (–40°C to +85°C).

Technical Context

The 71V67603S150BQ implements a synchronous dual-register architecture: address, data, and control signals are registered on the rising edge of CLK, enabling precise timing control. Its internal burst address counter advances on ADV=LOW and selects sequence order (linear vs. interleaved) based on static LBO input state.

It supports three distinct operational modes: pipelined read (with tCLZ = 0ns output activation), self-timed write (gated by GW/BWE/BWx), and full sleep (ZZ HIGH, IZZ ≤ 70mA). Deselect is completed in one clock cycle, and OE is asynchronous-enabling fast output disable independent of clock phase.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit or 512K × 18-bit - selectable configuration defines data bus width and address depth for system-level memory mapping.
Clock Frequency / Access Time	150MHz / 3.8ns - guarantees deterministic read latency aligned to system clock; enables tight timing closure in 6.7ns cycle-time designs.
VDD / VDDQ Supply	3.3V ±5% core (VDD) and 3.3V ±5% I/O (VDDQ) - decoupled power domains reduce switching noise coupling between logic and data I/O paths.
Burst Mode Control	LBO pin selects linear or interleaved 4-word burst sequence - determines address progression pattern for cache-line or DMA-aligned transfers.
Power-Down Current	IZZ ≤ 70mA (industrial temp) - ultra-low sleep current preserves data integrity while minimizing standby power in always-on systems.
Pipelined Output Delay	tCLZ = 0ns - output registers align data to next clock edge, eliminating combinatorial delay uncertainty in high-speed interfaces.
Single-Cycle Deselect	Chip deactivation completes within one CLK period - eliminates bus contention windows during rapid chip-select switching.

Pinout & Package

71V67603S150BQ is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pinout is validated for the 256K × 36 configuration per PKG100 drawing (Rev. 6.42, p.5).

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous inputs latched on rising CLK edge when ADSP/ADSC active; define 19-bit address space for 512K×18 mode.
CLK	System Clock Input	Primary timing reference; all synchronous operations (read/write/burst advance) are edge-triggered on rising edge.
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE gates byte writes; BW1–BW4 select individual 9-bit bytes (I/O0–7/I/OP1, etc.).
ADV, ADSP, ADSC	Burst & Address Status	ADV advances internal burst counter; ADSP (processor) and ADSC (cache controller) load address register synchronously.
OE	Asynchronous Output Enable	Directly controls I/O drivers; LOW enables outputs regardless of CLK state - critical for glitch-free bus sharing.
ZZ	Asynchronous Sleep Mode	HIGH disables internal clock and reduces current to IZZ ≤ 70mA; retains data without external refresh.
I/O0–I/O31, I/OP1–I/OP4	Data I/O (36-bit)	Registered bidirectional bus; 32 data bits + 4 parity bits; driven only when CE/CS0/CS1 selected and OE LOW.
VDD, VDDQ, VSS	Power & Ground	VDD (core logic), VDDQ (I/O drivers), and VSS (common ground) require separate decoupling per JEDEC layout guidelines.

Key Features

Feature	Design Value
Pipelined Outputs	Output data registered on CLK rising edge with tCLZ = 0ns - eliminates hold-time violations in multi-chip parallel buses.
Self-Timed Write Cycle	Internal write timing determined by GW/BWE/BWx sampling at CLK edge - removes external write-pulse generation logic.
Single-Cycle Deselect	Deactivation completes in one CLK period - enables rapid bank switching in multi-SRAM memory controllers.
Linear/Interleaved Burst Selection	LBO pin statically configures burst address sequence - matches CPU cache line ordering or DSP memory access patterns.
3.3V Core + 3.3V I/O Separation	Dual-supply architecture (VDD/VDDQ) isolates core logic noise from I/O switching transients - improves signal integrity at 150MHz.
Industrial Temperature Range	–40°C to +85°C operation - qualified for base station RF modules, industrial PLCs, and transportation control units.

Applications

Networking Packet Buffer	FPGA Co-Processor Cache
Use Scenario: Storing ingress/egress packet headers and metadata in 10G Ethernet line cards before classification or forwarding. IC Role / Device Role: High-bandwidth, low-latency buffer interfacing directly to MAC-layer logic and traffic manager ASICs. Use Value: 150MHz burst reads deliver four 36-bit words per address cycle, matching 600MB/s line-rate throughput requirements.	Use Scenario: Providing scratchpad memory for Xilinx Kintex or Intel Stratix FPGA-based digital signal processing pipelines. IC Role / Device Role: Off-chip data staging memory synchronized to FPGA fabric clock domain via registered interface. Use Value: Pipelined outputs eliminate external latch logic; single-cycle deselect enables dynamic memory partitioning across multiple compute engines.
Industrial Motion Controller	Avionics Data Acquisition Buffer
Use Scenario: Capturing real-time encoder position and servo feedback data in CNC machine controllers with deterministic jitter budget. IC Role / Device Role: Deterministic-access FIFO buffer between analog-to-digital converters and real-time motion algorithm cores. Use Value: tCD = 3.8ns and tOHZ = 3.8ns guarantee sub-4ns output validity window - meets <10ns total jitter requirement.	Use Scenario: Buffering sensor telemetry (pressure, temperature, acceleration) from ARINC 429 or MIL-STD-1553 interfaces in flight control computers. IC Role / Device Role: Radiation-tolerant-qualified SRAM (via packaging and screening) serving as mission-critical data staging memory. Use Value: ZZ sleep mode (IZZ ≤ 70mA) enables power-gating during non-acquisition intervals without data loss - extends battery runtime.

Networking Packet Buffer

FPGA Co-Processor Cache

Use Scenario: Storing ingress/egress packet headers and metadata in 10G Ethernet line cards before classification or forwarding.

IC Role / Device Role: High-bandwidth, low-latency buffer interfacing directly to MAC-layer logic and traffic manager ASICs.

Use Value: 150MHz burst reads deliver four 36-bit words per address cycle, matching 600MB/s line-rate throughput requirements.

Use Scenario: Providing scratchpad memory for Xilinx Kintex or Intel Stratix FPGA-based digital signal processing pipelines.

IC Role / Device Role: Off-chip data staging memory synchronized to FPGA fabric clock domain via registered interface.

Use Value: Pipelined outputs eliminate external latch logic; single-cycle deselect enables dynamic memory partitioning across multiple compute engines.

Industrial Motion Controller

Avionics Data Acquisition Buffer

Use Scenario: Capturing real-time encoder position and servo feedback data in CNC machine controllers with deterministic jitter budget.

IC Role / Device Role: Deterministic-access FIFO buffer between analog-to-digital converters and real-time motion algorithm cores.

Use Value: tCD = 3.8ns and tOHZ = 3.8ns guarantee sub-4ns output validity window - meets <10ns total jitter requirement.

Use Scenario: Buffering sensor telemetry (pressure, temperature, acceleration) from ARINC 429 or MIL-STD-1553 interfaces in flight control computers.

IC Role / Device Role: Radiation-tolerant-qualified SRAM (via packaging and screening) serving as mission-critical data staging memory.

Use Value: ZZ sleep mode (IZZ ≤ 70mA) enables power-gating during non-acquisition intervals without data loss - extends battery runtime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371BV33-167AXC	167MHz max frequency; 256K × 32 organization (no parity pins); uses different burst control (MODE pin instead of LBO).	Lacks I/OP parity bits and linear/interleaved burst flexibility; requires PCB redesign for pinout and timing margin adjustments.	Select when higher clock rate is prioritized over burst configurability and parity support.
AS7C3256A-15JC	15ns async access; no pipelining, burst, or clocked interface; 32K × 8 organization - fundamentally asynchronous architecture.	Cannot replace 71V67603S150BQ in clock-synchronous systems; suitable only for legacy glue logic or simple microcontroller interfaces.	Consider only for cost-sensitive, non-burst, low-speed control-plane memory where timing determinism is not required.

Compared with CY7C1371BV33-167AXC and AS7C3256A-15JC, the 71V67603S150BQ uniquely combines 36-bit width with parity, programmable burst sequencing, and true pipelined output timing - making it irreplaceable in high-reliability, high-throughput synchronous memory subsystems requiring deterministic latency and data integrity.

Availability

71V67603S150BQ is available at Aetrix Electronics and suitable for networking packet buffering, FPGA co-processor caching, and industrial motion control applications requiring stable component supply, long-term lifecycle assurance, and industrial-grade temperature qualification.

Supply support for 71V67603S150BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for infrastructure and industrial markets.

The 71V67603S150BQ belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic latency, burst efficiency, and robust operation in telecom, aerospace, and automation systems demanding >100MHz sustained bandwidth.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67603S150BQ?

The 71V67603S150BQ is rated for 150MHz operation with a guaranteed clock access time of 3.8ns. This specification applies across the full industrial temperature range (–40°C to +85°C) under VDD/VDDQ = 3.3V ±5%. The device also supports 166MHz (3.5ns) and 133MHz (4.2ns) speed grades, but the 'S150' suffix confirms the 150MHz/3.8ns binning.

Does the 71V67603S150BQ support both 256K × 36 and 512K × 18 configurations on the same die?

Yes, the 71V67603S150BQ is a dual-configuration device: it operates as either 256K × 36-bit or 512K × 18-bit depending on address pin usage and system initialization. The 256K × 36 mode uses A0–A17 for addressing and provides 36-bit data (I/O0–I/O31 + I/OP1–I/OP4); the 512K × 18 mode uses A0–A18 and maps to 18 data bits, with unused pins configured as NC per the PKG100 pinout diagram.

How does the LBO pin affect burst address sequencing in the 71V67603S150BQ?

The LBO (Linear Burst Order) pin is an asynchronous static input that selects between two burst address sequences: when LBO = LOW, the device uses linear burst (00→01→10→11); when LBO = HIGH, it uses interleaved burst (00→01→11→10). This setting must remain stable during operation and is sampled at power-up or configuration time - it directly determines how the internal 2-bit burst counter increments for four-word bursts.

What is the function of the ZZ pin, and what power savings does it provide in sleep mode?

The ZZ pin is an asynchronous input that places the 71V67603S150BQ into full sleep mode when driven HIGH. In this state, internal clocks are gated, dynamic power drops sharply, and supply current is reduced to IZZ ≤ 70mA (industrial grade). Data retention is guaranteed, and recovery time (tZZR) is 100ns - enabling rapid wake-up for burst-intensive workloads without data loss.

Can the 71V67603S150BQ be used with a 2.5V or 1.8V I/O interface?

No, the 71V67603S150BQ requires VDDQ = 3.3V ±5% for I/O operation and is not compatible with 2.5V or 1.8V signaling. Its VIH and VIL thresholds are defined relative to VDDQ (VIH ≥ 2.0V, VIL ≤ 0.8V), and driving inputs below 2.0V may result in undefined logic states. Level-shifting circuitry is required for interfacing with lower-voltage FPGAs or processors.

71V67603S150BQ Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 150 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V67603S150BQ FAQ

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Please submit a Request for Quotation (RFQ) for 71V67603S150BQ on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of 71V67603S150BQ are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S150BQ is usually 5 days.

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5.How can I obtain technical support or documentation for 71V67603S150BQ?

For technical support, including 71V67603S150BQ datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S150BQ requirements.

6.How does Aetrix verify that 71V67603S150BQ is sourced from the original manufacturer or authorized distributors?

All 71V67603S150BQ products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S150BQ meets industry standards.

7.What is the process for return or replacement of 71V67603S150BQ?

All 71V67603S150BQ units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S150BQ, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67603S150BQ part is unused and in its original packaging.

Return procedure for 71V67603S150BQ:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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