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Renesas 71V67603S150BQ8

Name: 71V67603S150BQ8
Brand: Renesas
SKU: 71V67603S150BQ8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67603S150BQ8

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V67603S150BQ8.pdf

Description:: IC SRAM 9MBIT PAR 165CABGA

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Product details

Overview

71V67603S150BQ8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports interleaved/linear burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW4), and operates across commercial temperature range (0°C to +70°C). It is used in high-speed networking buffers and cache subsystems requiring deterministic low-latency memory access.

For engineers reviewing the 71V67603S150BQ8 datasheet, 71V67603S150BQ8 pinout, 71V67603S150BQ8 application, or 71V67603S150BQ8 equivalent, key selection criteria include burst timing compliance, ZZ sleep mode current (≤50mA), pipelined read latency, 100-pin TQFP mechanical compatibility, and 3.3V I/O voltage tolerance (VDDQ = 3.3V ±5%).

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter generates four sequential addresses per ADV assertion, with output pipelining delivering first data on the next rising CLK edge and subsequent data on three consecutive edges.

The device supports two memory configurations (256K × 36 or 512K × 18) via pin-strapping and package variant - the 71V67603S150BQ8 is specifically the 256K × 36 version in 100-pin TQFP. Burst order (linear vs. interleaved) is selected by the static LBO input, and self-timed writes are enabled via GW, BWE, and BWx signals with no external timing constraints.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9Mbit total); enables wide-data-path buffering for packet processors and DSPs.
Max Clock Frequency	150MHz (tCYC = 6.7ns); guarantees deterministic 3.8ns access time for timing-critical read cycles.
Core & I/O Voltage	VDD = VDDQ = 3.3V ±5%; eliminates level-shifting requirements in 3.3V system designs.
Burst Mode	Linear or interleaved 4-word burst (LBO-controlled); reduces address bus traffic and improves bandwidth efficiency.
Power-Down Current	IZZ ≤ 50mA (commercial temp); enables low-power idle states without data loss during sleep mode (ZZ = HIGH).
Pipelined Outputs	First data valid one CLK cycle after address latch; enables back-to-back reads with zero turnaround penalty.
Single-Cycle Deselect	Outputs go high-Z within one CLK cycle of chip disable; prevents bus contention in multi-SRAM systems.

Pinout & Package

71V67603S150BQ8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pinout conforms to PKG100 configuration for 256K × 36 organization.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous address latching on rising CLK edge gated by ADSP/ADSC; A0–A17 used for 256K × 36 addressing.
CLK	System Clock Input	Primary timing reference; all synchronous operations (read/write/burst advance) are edge-triggered on rising edge.
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE gates BWx; BW1–BW4 select individual 9-bit bytes (I/O0–7/I/OP1, etc.).
ADV, ADSP, ADSC	Burst & Address Status	ADV advances internal burst counter; ADSP (processor) and ADSC (cache) load address register synchronously.
LBO	Burst Order Select	Asynchronous static input: LOW = linear burst, HIGH = interleaved burst; must remain stable during operation.
ZZ	Sleep Mode Enable	Asynchronous HIGH activates full sleep mode; clocks gated internally, I/Os high-Z, core power minimized.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional synchronous data bus; registered input/output paths ensure timing predictability.

Key Features

Feature	Design Value
Self-timed write cycle	Eliminates external write pulse generation; write completion determined internally based on GW/BWE/BWx state at CLK edge.
Pipelined output architecture	Reduces effective read latency: first data appears on second CLK edge, enabling continuous burst throughput without wait states.
Single-cycle deselect	Guarantees bus release within one clock period upon CE/CS deassertion - critical for multi-master arbitration and hot-swap systems.
Configurable burst order (LBO)	Supports both linear (sequential) and interleaved (cache-friendly) addressing patterns without firmware change - hardware-selectable.
3.3V core and I/O supplies	Enables direct interface with 3.3V FPGAs, ASICs, and microprocessors; eliminates need for voltage translators or dual-rail regulators.

Applications

Network Packet Buffering	High-Speed Cache Memory
Use Scenario: Storing ingress/egress Ethernet or SONET frames in line cards before classification or forwarding. IC Role / Device Role / Timing Role: Primary buffer SRAM providing deterministic 150MHz burst reads/writes with pipelined output to match MAC/PHY timing. Use Value: Single-cycle deselect and pipelined reads enable back-to-back frame handling at wire speed without pipeline stalls.	Use Scenario: Second-level (L2) cache for RISC-based network processors requiring low-latency, wide-data access. IC Role / Device Role / Timing Role: Synchronous SRAM acting as cache tag/data array with burst capability aligned to processor word size. Use Value: Linear/interleaved burst modes match CPU cache line fetch patterns; 3.8ns access ensures sub-cycle hit latency.
Telecom Baseband Processing	Industrial Real-Time Control Buffer
Use Scenario: Temporary storage of decoded voice or video samples in wireless base station transceivers. IC Role / Device Role / Timing Role: High-reliability buffer SRAM interfacing with DSPs via synchronous 36-bit parallel bus. Use Value: ZZ sleep mode reduces standby power during silence intervals while retaining data integrity across temperature range.	Use Scenario: Motion controller FIFO for servo drive command sequencing in CNC or robotics systems. IC Role / Device Role / Timing Role: Deterministic latency SRAM ensuring jitter-free command delivery to motor drivers. Use Value: 150MHz clock rate and single-cycle deselect guarantee precise timing alignment with real-time interrupt service routines.

Network Packet Buffering

High-Speed Cache Memory

Use Scenario: Storing ingress/egress Ethernet or SONET frames in line cards before classification or forwarding.

IC Role / Device Role / Timing Role: Primary buffer SRAM providing deterministic 150MHz burst reads/writes with pipelined output to match MAC/PHY timing.

Use Value: Single-cycle deselect and pipelined reads enable back-to-back frame handling at wire speed without pipeline stalls.

Use Scenario: Second-level (L2) cache for RISC-based network processors requiring low-latency, wide-data access.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as cache tag/data array with burst capability aligned to processor word size.

Use Value: Linear/interleaved burst modes match CPU cache line fetch patterns; 3.8ns access ensures sub-cycle hit latency.

Telecom Baseband Processing

Industrial Real-Time Control Buffer

Use Scenario: Temporary storage of decoded voice or video samples in wireless base station transceivers.

IC Role / Device Role / Timing Role: High-reliability buffer SRAM interfacing with DSPs via synchronous 36-bit parallel bus.

Use Value: ZZ sleep mode reduces standby power during silence intervals while retaining data integrity across temperature range.

Use Scenario: Motion controller FIFO for servo drive command sequencing in CNC or robotics systems.

IC Role / Device Role / Timing Role: Deterministic latency SRAM ensuring jitter-free command delivery to motor drivers.

Use Value: 150MHz clock rate and single-cycle deselect guarantee precise timing alignment with real-time interrupt service routines.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV33-167BZXI	256K × 36, 167MHz, 3.3V, 100-pin TQFP; lower tCD (3.5ns) but higher ISB1 (75mA).	Higher speed grade suitable for 167MHz systems; not drop-in due to different AC timing margins and power specs.	Select when >150MHz operation is required and sleep current is less critical than peak bandwidth.
AS7C33256PFS-15BIN	256K × 36, 150MHz, 3.3V, 100-pin TQFP; no LBO or ADV pins - fixed linear burst only.	Lacks configurable burst order and burst suspend (ADV) functionality; simplified control interface.	Choose for cost-sensitive designs where burst flexibility is unnecessary and pin count reduction is prioritized.

Compared with CY7C1362BV33-167BZXI and AS7C33256PFS-15BIN, the 71V67603S150BQ8 uniquely combines programmable burst order (LBO), burst suspend (ADV), and guaranteed 50mA sleep current - making it optimal for adaptive, low-power, high-reliability telecom and industrial buffering.

Availability

71V67603S150BQ8 is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache memory, and industrial real-time control applications requiring stable component supply, long-term lifecycle support, and RoHS-compliant 100-pin TQFP packaging.

Supply support for 71V67603S150BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for communications, computing, and industrial markets.

The 71V67603S150BQ8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in telecom infrastructure, enterprise networking, and real-time embedded systems.

FAQ

What is the maximum operating frequency of the 71V67603S150BQ8?

The 71V67603S150BQ8 is rated for 150MHz operation with a guaranteed 3.8ns clock access time (tCD). This frequency is validated across the commercial temperature range (0°C to +70°C) under VDD/VDDQ = 3.3V ±5%. It also supports 133MHz (4.2ns) and 166MHz (3.5ns) variants, but the 'S150' suffix confirms this specific part is the 150MHz grade.

Does the 71V67603S150BQ8 support both linear and interleaved burst modes?

Yes, the 71V67603S150BQ8 supports both burst modes via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the device executes linear burst addressing; when HIGH, it uses interleaved burst order. The LBO pin is asynchronous and static - it must remain stable during active operation and is not sampled dynamically.

How does the ZZ pin function in the 71V67603S150BQ8?

The ZZ pin on the 71V67603S150BQ8 is an asynchronous sleep mode enable. When ZZ is driven HIGH, the device enters full sleep mode: internal clocks are gated, core logic is powered down, and I/Os enter high-impedance state - while retaining data. Supply current drops to ≤50mA (IZZ), and recovery time (tZZR) is guaranteed at 100ns.

What is the purpose of the ADV pin in the 71V67603S150BQ8?

The ADV (Burst Address Advance) pin controls burst progression in the 71V67603S150BQ8. When ADV is LOW on the rising CLK edge, the internal burst counter increments to generate the next sequential address. When ADV is HIGH, burst advancement is suspended - allowing repeated access to the same or controlled address sequence without counter wrap.

Which package type is used for the 71V67603S150BQ8?

The 71V67603S150BQ8 uses a JEDEC-standard 100-pin thin quad flatpack (TQFP), designated PKG100. Its dimensions are 14mm × 20mm with 0.5mm lead pitch. This package supports the 256K × 36 configuration and is distinct from the 119-ball BGA and 165-ball fBGA variants used for other members of the 71V67603/71V67803 family.

71V67603S150BQ8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 150 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V67603S150BQ8 FAQ

1.How can I place an order for 71V67603S150BQ8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67603S150BQ8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67603S150BQ8 reliable?

The price and inventory of 71V67603S150BQ8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S150BQ8 is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67603S150BQ8?

For technical support, including 71V67603S150BQ8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S150BQ8 requirements.

6.How does Aetrix verify that 71V67603S150BQ8 is sourced from the original manufacturer or authorized distributors?

All 71V67603S150BQ8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S150BQ8 meets industry standards.

7.What is the process for return or replacement of 71V67603S150BQ8?

All 71V67603S150BQ8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S150BQ8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67603S150BQ8 part is unused and in its original packaging.

Return procedure for 71V67603S150BQ8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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