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Renesas 71V67603S150BQG

Name: 71V67603S150BQG
Brand: Renesas
SKU: 71V67603S150BQG
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67603S150BQG

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V67603S150BQG.pdf

Description:: IC SRAM 9MBIT PAR 165CABGA

Quantity:: RFQ Add To RFQ list

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Product details

Overview

71V67603S150BQG from IDT (now Renesas) is a 256K × 36-bit or 512K × 18-bit 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and burst-mode operation. It delivers 150MHz clock speed with 3.8ns access time, supports interleaved/linear burst via LBO pin, and features global write (GW), byte write enables (BW1–BW4), and asynchronous sleep mode (ZZ). It is used in high-speed networking buffers and cache subsystems requiring deterministic latency.

For engineers reviewing the 71V67603S150BQG datasheet, 71V67603S150BQG pinout, 71V67603S150BQG application, or 71V67603S150BQG equivalent, key selection considerations include burst address sequencing (LBO-controlled), self-timed write cycle timing, 3.3V core/I/O supply separation (VDD/VDDQ), TQFP-100 package compatibility, and industrial temperature support (−40°C to +85°C).

Technical Context

The 71V67603S150BQG implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter generates four sequential addresses per ADV assertion, with output pipelining delivering first data on the second clock edge after address load.

Burst order is selected by the static LBO input (LOW = linear, HIGH = interleaved), and write operations are controlled synchronously via GW, BWE, and BW1–BW4 - enabling full-word or individual 9-bit byte writes. Sleep mode is entered asynchronously via ZZ HIGH, reducing supply current to ≤70mA (industrial grade).

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (or 512K × 18-bit); dual-configurable density for flexible bus-width matching.
Clock Frequency	150MHz maximum; enables 6.7ns clock cycle time for predictable system timing budgeting.
Access Time	3.8ns clock-to-data (tCD); guarantees pipelined output validity within one clock cycle after CLK rise.
Supply Voltages	VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); independent rails allow I/O voltage domain isolation.
Operating Temperature	−40°C to +85°C (industrial grade); validated for embedded telecom and industrial control environments.
Power Consumption	ISB2 = 175mA (industrial, 150MHz clock running, deselected); quantifies active-standby power during burst-idle cycles.
Output Drive	Pipelined, registered outputs with tCLZ = 0ns (clock-high to output active); eliminates combinatorial delay uncertainty.

Pinout & Package

71V67603S150BQG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead-free and RoHS-compliant. Pin 1 identifier is marked with a dot; pin 14 may be tied to VDD or left unconnected; pin 64 (ZZ) must be actively driven or pulled externally - internal pull-down ensures active mode if floating.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous address latching on rising CLK edge gated by ADSP/ADSC; supports 19-bit addressing for 512K×18 mode.
CLK	System Clock Input	Primary timing reference; all synchronous registers (address, data, control) sample on rising edge.
GW / BWE / BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each enable one 9-bit byte (I/O0–7/IOP1, etc.).
ADV / ADSP / ADSC	Burst Address Control	ADV advances internal burst counter; ADSP (processor) and ADSC (cache) load initial address register synchronously.
LBO	Burst Order Select	Asynchronous static input: LOW = linear sequence (00→01→10→11), HIGH = interleaved (00→01→11→10).
ZZ	Sleep Mode Enable	Asynchronous HIGH forces internal clock gating and reduces IDD to ≤70mA; retains data in sleep.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional synchronous bus; registered input/output paths ensure setup/hold compliance at 150MHz.

Key Features

Feature	Design Value
Pipelined Outputs	First read data appears on second CLK edge after address load - eliminates wait states in high-frequency pipelines.
Single-Cycle Deselect	Chip deactivation completes within one clock cycle; enables rapid context switching between memory banks.
Self-Timed Write Cycle	Internal timing logic finalizes write duration without external strobe; simplifies controller design and improves margin.
Configurable Burst Mode	LBO pin selects linear or interleaved 4-word burst order - matches CPU/cache line fetch patterns without firmware change.
Independent VDD/VDDQ Supplies	Separate 3.3V core and I/O rails allow noise isolation and compatibility with mixed-voltage SoC interfaces.

Applications

Networking Packet Buffer	Industrial PLC Data Cache
Use Scenario: Storing incoming Ethernet frames in a switch ASIC before classification and forwarding. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly to MAC-layer logic via synchronous 36-bit bus. Use Value: 150MHz burst reads deliver 600MB/s sustained throughput; pipelined outputs align with pipeline stages to eliminate interlock stalls.	Use Scenario: Holding real-time I/O status and control algorithm variables in a modular programmable logic controller. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for cyclic executive tasks operating at 1ms scan intervals. Use Value: Single-cycle deselect and guaranteed 3.8ns access enable sub-microsecond response to fieldbus interrupts; industrial temp rating ensures reliability in cabinet environments.
Telecom Baseband Processor Cache	Test Equipment Pattern Memory
Use Scenario: Serving as L2 cache for a multi-core DSP in a 4G/LTE baseband unit handling channel estimation and FFT processing. IC Role / Device Role / Timing Role: Synchronous SRAM providing zero-wait-state access to frequently reused coefficient tables and intermediate results. Use Value: Linear burst mode (LBO=LOW) matches sequential FFT memory access; 36-bit width accommodates complex 16-bit IQ sample pairs.	Use Scenario: Storing high-speed digital stimulus/response vectors in automated test equipment for semiconductor validation. IC Role / Device Role / Timing Role: High-reliability pattern memory synchronized to ATE timing generator clocks up to 150MHz. Use Value: Byte-write capability (BW1–BW4) allows partial vector updates without full reload; ZZ sleep mode reduces power between test sequences.

Networking Packet Buffer

Industrial PLC Data Cache

Use Scenario: Storing incoming Ethernet frames in a switch ASIC before classification and forwarding.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly to MAC-layer logic via synchronous 36-bit bus.

Use Value: 150MHz burst reads deliver 600MB/s sustained throughput; pipelined outputs align with pipeline stages to eliminate interlock stalls.

Use Scenario: Holding real-time I/O status and control algorithm variables in a modular programmable logic controller.

IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for cyclic executive tasks operating at 1ms scan intervals.

Use Value: Single-cycle deselect and guaranteed 3.8ns access enable sub-microsecond response to fieldbus interrupts; industrial temp rating ensures reliability in cabinet environments.

Telecom Baseband Processor Cache

Test Equipment Pattern Memory

Use Scenario: Serving as L2 cache for a multi-core DSP in a 4G/LTE baseband unit handling channel estimation and FFT processing.

IC Role / Device Role / Timing Role: Synchronous SRAM providing zero-wait-state access to frequently reused coefficient tables and intermediate results.

Use Value: Linear burst mode (LBO=LOW) matches sequential FFT memory access; 36-bit width accommodates complex 16-bit IQ sample pairs.

Use Scenario: Storing high-speed digital stimulus/response vectors in automated test equipment for semiconductor validation.

IC Role / Device Role / Timing Role: High-reliability pattern memory synchronized to ATE timing generator clocks up to 150MHz.

Use Value: Byte-write capability (BW1–BW4) allows partial vector updates without full reload; ZZ sleep mode reduces power between test sequences.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1371DV33-166AXC	256K × 36-bit, 166MHz, 3.3V; uses different burst control (MODE pin instead of LBO) and lacks single-cycle deselect.	Requires modified controller logic for burst initiation; not drop-in for LBO-dependent systems.	Select when higher 166MHz speed is required and burst sequencing flexibility is secondary.
AS7C33128PFSI-15	256K × 36-bit, 150MHz, 3.3V; no pipelined outputs - outputs valid after tAA (5.5ns), not tCD.	Introduces 1.7ns longer read latency vs. 71V67603S150BQG; impacts tight-pipeline designs.	Choose for cost-sensitive applications where pipelining is unnecessary and layout reuse of non-pipelined SRAM is preferred.

Compared with CY7C1371DV33-166AXC and AS7C33128PFSI-15, the 71V67603S150BQG uniquely combines pipelined output timing, LBO-selectable burst order, and single-cycle deselect - making it optimal for latency-critical, burst-intensive embedded systems where controller compatibility and deterministic timing are mandatory.

Availability

71V67603S150BQG is available at Aetrix Electronics and suitable for networking packet buffers, industrial PLC data caches, and telecom baseband processor caches requiring stable component supply across extended product lifecycles.

Supply support for 71V67603S150BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory interface, and RF solutions for communications and computing infrastructure.

The 71V67603S150BQG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable memory subsystems in networking, telecom, and industrial real-time control applications.

FAQ

What is the maximum supported clock frequency for the 71V67603S150BQG?

The 71V67603S150BQG is rated for 150MHz operation with guaranteed 3.8ns clock-to-data (tCD) access time under industrial conditions (−40°C to +85°C). While the 71V67603 family includes a 166MHz variant (71V67603S166), the S150BQG suffix confirms its 150MHz speed grade and associated timing specifications.

Does the 71V67603S150BQG support both 256K × 36 and 512K × 18 configurations?

Yes, the 71V67603S150BQG is functionally configurable as either 256K × 36-bit or 512K × 18-bit through address pin usage - A0–A17 define the 256K × 36 mode, while A0–A18 enable the 512K × 18 mode. The device automatically adapts based on address decoding and control signal timing per the datasheet truth tables.

How does the LBO pin affect burst behavior in the 71V67603S150BQG?

The LBO (Linear Burst Order) pin selects burst sequence: LOW configures linear order (00→01→10→11), HIGH selects interleaved (00→01→11→10). This setting is sampled asynchronously and must remain static during burst operation. The 71V67603S150BQG implements this at the hardware level using an internal binary counter gated by LBO state.

What is the role of the ZZ pin in the 71V67603S150BQG, and how does it impact power consumption?

The ZZ pin enables asynchronous sleep mode: when driven HIGH, it gates the internal clock and reduces supply current to ≤70mA (industrial grade). Data retention is guaranteed during sleep. The 71V67603S150BQG requires no reinitialization upon wake - normal operation resumes after tZZR (100ns recovery time) following ZZ LOW assertion.

Can the 71V67603S150BQG perform byte-level writes, and how are they enabled?

Yes, the 71V67603S150BQG supports four independent 9-bit byte writes via BW1–BW4. Each BWx enables one byte group (e.g., BW1 → I/O0–7 and I/OP1). Byte writes require BWE = LOW and GW = HIGH; activation of any BWx disables all outputs during the write cycle, ensuring bus integrity.

71V67603S150BQG Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 150 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V67603S150BQG FAQ

1.How can I place an order for 71V67603S150BQG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67603S150BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67603S150BQG reliable?

The price and inventory of 71V67603S150BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S150BQG is usually 5 days.

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Once your 71V67603S150BQG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67603S150BQG?

For technical support, including 71V67603S150BQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S150BQG requirements.

6.How does Aetrix verify that 71V67603S150BQG is sourced from the original manufacturer or authorized distributors?

All 71V67603S150BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S150BQG meets industry standards.

7.What is the process for return or replacement of 71V67603S150BQG?

All 71V67603S150BQG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S150BQG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67603S150BQG part is unused and in its original packaging.

Return procedure for 71V67603S150BQG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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