Renesas 71V67603S150BQG8

Overview

71V67603S150BQG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports interleaved/linear burst modes via LBO input, features self-timed write with global and byte-level write control, and targets high-bandwidth cache and buffer applications in telecom and networking equipment.

For engineers reviewing the 71V67603S150BQG8 datasheet, 71V67603S150BQG8 pinout, 71V67603S150BQG8 application, or 71V67603S150BQG8 equivalent, key selection considerations include its 100-pin TQFP package, 3.3V core/I/O supply, burst counter architecture, ZZ sleep mode support, and compatibility with high-speed processor/cache controller interfaces requiring pipelined read timing and single-cycle deselection.

Technical Context

The 71V67603S150BQG8 implements a synchronous, clock-driven interface with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst logic uses a binary counter to generate four consecutive addresses from a single input, with sequence order determined by the static LBO pin state-linear when LBO = LOW, interleaved when LBO = HIGH.

Write operations are self-timed and configurable: global write (GW) enables full 36-bit writes, while BWE and BW1–BW4 allow selective 9-bit byte writes. Pipelined output registers deliver first data one clock cycle after address assertion, enabling sustained 150MHz throughput without wait states in burst mode.

Key Specifications

Pinout & Package

71V67603S150BQG8 is packaged in a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm body size, with 0.5mm lead pitch. Pin 1 is marked by a dot or beveled corner per standard orientation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV18-167BZXI and AS7C3256A-15JIN, the 71V67603S150BQG8 uniquely delivers 256K×36 organization in a 100-pin TQFP with full burst control, pipelined outputs, and hardware sleep - making it irreplaceable for space-constrained, high-throughput synchronous buffer designs requiring pin-compatible upgrade paths.

Availability

71V67603S150BQG8 is available at Aetrix Electronics and suitable for network packet buffering, processor cache tag storage, and telecom line card FIFO applications requiring stable component supply across extended product lifecycles.

Supply support for 71V67603S150BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics Corporation (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance analog, mixed-signal, and memory solutions for communications, computing, and industrial markets.

The 71V67603S150BQG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-oriented buffer and cache applications in telecom infrastructure and high-end embedded systems.

FAQ

What is the maximum operating frequency of the 71V67603S150BQG8?

The 71V67603S150BQG8 is rated for 150MHz operation, corresponding to a 6.7ns clock cycle time and 3.8ns clock-to-data (tCD) access time. This rating applies across the commercial temperature range (0°C to +70°C); industrial-grade variants support 133MHz at –40°C to +85°C. The 'S150' suffix explicitly denotes the 150MHz speed grade.

Does the 71V67603S150BQG8 support both linear and interleaved burst modes?

Yes, the 71V67603S150BQG8 supports both burst modes via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst addressing (00→01→10→11); when LBO is HIGH, it performs interleaved burst (00→01→11→10). LBO is an asynchronous static input and must remain stable during active operation.

What is the function of the ZZ pin on the 71V67603S150BQG8?

The ZZ pin on the 71V67603S150BQG8 enables full sleep mode. When ZZ is driven HIGH, the internal clock is gated and core logic enters ultra-low-power state, reducing supply current to 50mA (IZZ) while maintaining data retention. ZZ is asynchronous and requires no setup/hold timing relative to CLK.

How many data bits does the 71V67603S150BQG8 provide, and what is the role of I/OP1–I/OP4?

The 71V67603S150BQG8 provides 36 data bits: I/O0–I/O31 (32 bits) plus I/OP1–I/OP4 (4 parity bits). These parity bits support error detection in mission-critical buffer applications. In 512K×18 configurations (e.g., 71V67803), I/OP1–I/OP4 are unused and may be left unconnected.

Is the 71V67603S150BQG8 pin-compatible with other devices in the 71V676xx/71V678xx family?

Yes, the 71V67603S150BQG8 shares identical pinout and package (100-pin TQFP) with 71V67803 variants and other speed grades (e.g., 71V67603S166BQG8). Memory organization (256K×36 vs. 512K×18) is configured via address pin usage (A18), not pin count - enabling drop-in replacement within the same package footprint and signal routing.