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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V67603S150BQI

Name: 71V67603S150BQI
Brand: Renesas
SKU: 71V67603S150BQI
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67603S150BQI

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V67603S150BQI.pdf

Description:: IC SRAM 9MBIT PAR 165CABGA

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Product details

Overview

71V67603S150BQI from IDT (now Renesas) is a 256K × 36-bit or 512K × 18-bit 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and burst-mode operation. It supports 150MHz clock frequency with 3.8ns clock access time, features self-timed write with global/byte write control, and operates across industrial temperature range (–40°C to +85°C). It is used in high-speed networking line cards and packet buffer applications requiring deterministic latency and burst data throughput.

For engineers reviewing the 71V67603S150BQI datasheet, 71V67603S150BQI pinout, 71V67603S150BQI application, or 71V67603S150BQI equivalent, key selection criteria include burst mode configuration (LBO), pipelined read timing (tCD = 3.8ns @150MHz), ZZ-controlled sleep current (IZZ = 70µA), and TQFP-100 package compatibility with JEDEC-standard layout.

Technical Context

The 71V67603S150BQI implements a synchronous dual-register architecture: address and control signals are latched on the rising edge of CLK, while data input/output paths are fully registered for pipelined operation. Its internal burst counter supports linear or interleaved sequences based on LBO pin state, enabling four-word bursts per address cycle.

Burst initiation is controlled by ADSP/ADSC status inputs and ADV signal; write cycles support global (GW) or byte-level (BW1–BW4) enable with BWE gating. Power management includes asynchronous ZZ sleep mode (IZZ ≤ 70µA) and CMOS standby (ISB1 ≤ 70µA), both validated over industrial temperature range.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit or 512K × 18-bit - selectable via pin-strapping; enables flexible data bus width matching in 32-bit or 64-bit systems.
Clock Frequency	150MHz - guarantees tCYC ≤ 6.7ns; supports sustained burst reads/writes without wait states in high-throughput packet buffers.
Access Time	3.8ns clock-to-data (tCD) - defines minimum pipeline latency for first valid output after clock edge; critical for real-time buffering.
Supply Voltages	VDD = 3.3V ±5%, VDDQ = 3.3V ±5% - separate core/I/O rails allow independent noise isolation and signal integrity optimization.
Operating Temperature	–40°C to +85°C - qualified for industrial-grade embedded systems including telecom infrastructure and industrial controllers.
Sleep Current	IZZ ≤ 70µA - enables low-power idle states during traffic lulls without losing memory contents; reduces thermal load in dense PCB layouts.
Burst Mode	Linear or interleaved (LBO-selectable) - determines address sequence order for cache-line-aligned or sequential DMA transfers.

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pinout validated for 256K × 36 configuration per PKG100 drawing (Rev. 6.42, p.5).

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous address latching; A0–A17 used for 256K×36 mode; A18 selects upper/lower half in 512K×18 mode.
CLK	Clock Input	Rising-edge-triggered master timing reference; all registers (address, data, control) synchronized to this signal.
GW, BWE, BW1–BW4	Write Control Inputs	GW enables full 36-bit writes; BWE gates byte enables; BW1–BW4 select 9-bit I/O groups (I/O0–7/I/OP1, etc.).
ADV, ADSP, ADSC	Burst Address Control	ADSP/ADSC load initial address; ADV advances internal burst counter; ADV HIGH suspends burst sequence.
LBO	Burst Order Select	Asynchronous static input: LOW = linear burst (00→01→10→11), HIGH = interleaved burst (00→01→11→10).
ZZ	Sleep Mode Enable	Asynchronous HIGH activates full sleep mode; gates internal clock and reduces supply current to ≤70µA.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional synchronous data bus; I/OP1–I/OP4 are parity bits for ECC-capable systems.
VDD, VDDQ, VSS	Power/Ground	VDD (core), VDDQ (I/O), and VSS (common ground) require separate decoupling; VDDQ must track VDD within ±5%.

Key Features

Feature	Design Value
Pipelined Outputs	First data word appears one clock cycle after address latch; enables continuous burst reads at full clock rate without inter-cycle gaps.
Single-Cycle Deselect	Chip deactivation completes within one CLK period; eliminates bus contention windows and simplifies arbitration logic.
Self-Timed Write Cycle	Internal timing logic eliminates external write-pulse generation; supports variable-latency writes without external delay circuits.
Byte-Write Capability	Four independent 9-bit write enables (BW1–BW4) allow partial-word updates without read-modify-write overhead.
Industrial Temperature Range	Validated operation from –40°C to +85°C with full AC/DC specs; suitable for uncontrolled-environment base stations and routers.

Applications

Network Packet Buffer	Telecom Line Card Cache
Use Scenario: Storing ingress/egress Ethernet frames in multi-gigabit switch ASICs before classification and forwarding. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly with MAC-layer logic via synchronous burst interface. Use Value: 150MHz burst reads deliver 5.4 Gbps (36-bit × 150MHz) sustained throughput; pipelined outputs eliminate FIFO staging.	Use Scenario: Holding ATM cell headers and payload fragments in OC-48/STM-16 line interface units. IC Role / Device Role / Timing Role: Synchronous SRAM acting as descriptor cache for DMA engines managing SAR segmentation/reassembly. Use Value: Linear burst mode (LBO = LOW) matches sequential cell header access patterns; single-cycle deselect prevents DMA stall during context switches.
Industrial PLC Data Log	Test Equipment Pattern Memory
Use Scenario: Capturing sensor timestamped samples at 100kSPS in programmable logic controllers with deterministic jitter budgets. IC Role / Device Role / Timing Role: Deterministic-latency memory for cyclic data acquisition buffers synchronized to real-time OS tick. Use Value: Guaranteed tCD = 3.8ns and industrial temp rating ensure consistent timing margins across operating environments.	Use Scenario: Storing stimulus/response vectors in automated test equipment generating 150MHz digital patterns. IC Role / Device Role / Timing Role: High-speed pattern RAM accessed by vector generator logic with precise setup/hold compliance. Use Value: Separate VDD/VDDQ rails isolate core logic noise from I/O switching transients; 7pF I/O capacitance supports clean signal edges.

Network Packet Buffer

Telecom Line Card Cache

Use Scenario: Storing ingress/egress Ethernet frames in multi-gigabit switch ASICs before classification and forwarding.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly with MAC-layer logic via synchronous burst interface.

Use Value: 150MHz burst reads deliver 5.4 Gbps (36-bit × 150MHz) sustained throughput; pipelined outputs eliminate FIFO staging.

Use Scenario: Holding ATM cell headers and payload fragments in OC-48/STM-16 line interface units.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as descriptor cache for DMA engines managing SAR segmentation/reassembly.

Use Value: Linear burst mode (LBO = LOW) matches sequential cell header access patterns; single-cycle deselect prevents DMA stall during context switches.

Industrial PLC Data Log

Test Equipment Pattern Memory

Use Scenario: Capturing sensor timestamped samples at 100kSPS in programmable logic controllers with deterministic jitter budgets.

IC Role / Device Role / Timing Role: Deterministic-latency memory for cyclic data acquisition buffers synchronized to real-time OS tick.

Use Value: Guaranteed tCD = 3.8ns and industrial temp rating ensure consistent timing margins across operating environments.

Use Scenario: Storing stimulus/response vectors in automated test equipment generating 150MHz digital patterns.

IC Role / Device Role / Timing Role: High-speed pattern RAM accessed by vector generator logic with precise setup/hold compliance.

Use Value: Separate VDD/VDDQ rails isolate core logic noise from I/O switching transients; 7pF I/O capacitance supports clean signal edges.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV33-167AXC	256K × 36, 167MHz max, 3.3V, 100-pin TQFP; no LBO pin - fixed linear burst only.	Lacks interleaved burst mode; requires redesign of burst-address sequencing logic in cache-coherent systems.	Select when maximum speed (167MHz) is prioritized over burst flexibility and industrial temp support is not required.
AS7C3256A-15JC	256K × 36, 150MHz, 3.3V, 100-pin TQFP; no pipelined outputs - asynchronous output enable timing.	Higher tOE (4.5ns vs 3.8ns) increases read latency; lacks single-cycle deselect - longer bus release time.	Choose for cost-sensitive designs where deterministic pipeline timing is not critical and legacy interface compatibility is needed.

Compared with CY7C1362BV33-167AXC and AS7C3256A-15JC, the 71V67603S150BQI uniquely combines industrial temperature qualification, configurable burst ordering (LBO), and pipelined output timing - making it optimal for telecom and industrial real-time buffering where latency predictability and environmental robustness are non-negotiable.

Availability

71V67603S150BQI is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and industrial PLC data logging requiring stable component supply across extended lifecycle programs.

Supply support for 71V67603S150BQI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface ICs for communications and computing infrastructure.

The 71V67603S150BQI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for deterministic-latency buffering in packet-switched networks and real-time industrial control systems.

FAQ

What is the maximum supported clock frequency for the 71V67603S150BQI?

The 71V67603S150BQI is rated for 150MHz operation with guaranteed tCYC ≤ 6.7ns and tCD ≤ 3.8ns under industrial conditions (–40°C to +85°C, VDD = 3.3V ±5%). While the 71V67603 family includes 166MHz variants, the 'S150' suffix explicitly denotes the 150MHz speed grade. Exceeding this frequency risks timing violations in setup/hold and output validity windows.

Does the 71V67603S150BQI support both 256K × 36 and 512K × 18 configurations simultaneously?

No. The 71V67603S150BQI is hard-configured at manufacture for either 256K × 36 or 512K × 18 organization - determined by internal metal option and not user-selectable. The '71V67603' part number denotes the 256K × 36 variant; the 512K × 18 version is the 71V67803. Pinouts differ between configurations, especially for address lines and NC placements.

How does the LBO pin affect burst addressing in the 71V67603S150BQI?

The LBO pin selects burst order: LOW enables linear sequence (00→01→10→11), HIGH enables interleaved (00→01→11→10). This is critical for cache-line alignment - linear mode suits sequential DMA transfers, while interleaved matches certain CPU cache architectures. LBO is sampled asynchronously at power-up and must remain static during operation to prevent burst corruption.

What is the power consumption of the 71V67603S150BQI in sleep mode?

In full sleep mode (ZZ = HIGH), the 71V67603S150BQI draws ≤70µA (industrial grade) as specified in Table 9 of the datasheet. This is distinct from CMOS standby (ISB1 ≤ 70µA), which requires device deselection but keeps ZZ = LOW. Sleep mode gates the internal clock and retains data without refresh - essential for low-power system suspend states.

Can the 71V67603S150BQI be used with a 2.5V I/O supply?

No. The 71V67603S150BQI requires VDDQ = 3.3V ±5% as specified in Table 5; VIH for I/O pins is defined relative to VDDQ (min 2.0V, max VDDQ +0.3V). Applying 2.5V to VDDQ violates the absolute maximum rating (VTERM = –0.5V to VDDQ +0.5V) and risks unreliable output levels and increased leakage. It is not 2.5V-tolerant.

71V67603S150BQI Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tray

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 150 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.8 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: -40°C ~ 85°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V67603S150BQI FAQ

1.How can I place an order for 71V67603S150BQI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67603S150BQI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67603S150BQI reliable?

The price and inventory of 71V67603S150BQI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S150BQI is usually 5 days.

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For technical support, including 71V67603S150BQI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S150BQI requirements.

6.How does Aetrix verify that 71V67603S150BQI is sourced from the original manufacturer or authorized distributors?

All 71V67603S150BQI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S150BQI meets industry standards.

7.What is the process for return or replacement of 71V67603S150BQI?

All 71V67603S150BQI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S150BQI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67603S150BQI part is unused and in its original packaging.

Return procedure for 71V67603S150BQI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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