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Renesas 71V67603S150BQI8
- Part No.:
- 71V67603S150BQI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67603S150BQI8.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:4,518
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Product details
Overview
71V67603S150BQI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports interleaved/linear burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW4), and operates across industrial temperature range (−40°C to +85°C). Used in high-speed networking buffers and cache subsystems requiring deterministic latency.
For engineers reviewing the 71V67603S150BQI8 datasheet, 71V67603S150BQI8 pinout, 71V67603S150BQI8 application, or 71V67603S150BQI8 equivalent, key selection criteria include burst mode timing compliance, ZZ-controlled sleep current (≤70mA), VDD/VDDQ decoupling requirements, and TQFP-100 pin compatibility for legacy board reuse.
Technical Context
This SRAM implements a synchronous interface with registered address, data, and control paths triggered on the rising edge of CLK. Its internal burst counter generates four consecutive addresses from a single external address, with sequence order determined by the static LBO pin state (linear vs. interleaved).
Write operations are self-timed and support multiple configurations: global write (GW active), byte-selectable writes (BWE + BW1–BW4), or asynchronous output enable (OE) for tri-state control. Power management includes active standby (ISB1 ≤70mA), clock-running standby (ISB2 ≤175mA), and full sleep mode (IZZ ≤70mA) activated by ZZ high.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit configuration via address mapping |
| Max Clock Frequency | 150MHz - enables 6.7ns minimum clock cycle for deterministic burst read/write timing |
| Access Time | 3.8ns - clock-to-valid-data delay at 150MHz; critical for meeting setup/hold margins in high-speed bus designs |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); requires separate decoupling for noise isolation |
| Operating Temperature | −40°C to +85°C - qualified for industrial environments without derating |
| Power Consumption | IDD = 325mA max (150MHz, industrial); IZZ = 70mA max in full sleep - enables low-power idle states |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence - determines cache line addressing behavior |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pinout validated for 256K × 36 configuration per IDT documentation (PKG100 drawing 5301 drw 02).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous inputs latched on rising CLK edge with ADSP/ADSC; A0–A17 used for 256K × 36 addressing |
| CLK | System Clock Input | Primary timing reference; all registers (address, data, control) synchronized to rising edge |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates byte enables; BW1–BW4 select 9-bit I/O groups (I/O0–7/I/OP1, etc.) |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O Terminals | 36-bit bidirectional synchronous bus; registered input/output paths ensure timing predictability |
| OE | Asynchronous Output Enable | Tri-states outputs independently of CLK - allows dynamic bus sharing without clock domain constraints |
| ZZ | Asynchronous Sleep Mode | High-Z output and deep power-down when driven HIGH; retains data with IZZ ≤70mA |
| LBO | Burst Order Select | Static input defining burst address sequence: LOW = linear, HIGH = interleaved - must not toggle during operation |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | First output data available one clock cycle after address latch - reduces read latency in burst sequences |
| Single-Cycle Deselect | Chip deactivation completes within one CLK cycle - eliminates bus contention windows during chip switching |
| Self-Timed Write Cycle | Internal timing logic eliminates external write pulse generation - simplifies controller design and improves reliability |
| Byte-Write Granularity | Four independent 9-bit write lanes (BW1–BW4) enable partial-word updates without read-modify-write overhead |
| Industrial Temp Support | Full AC/DC specifications guaranteed from −40°C to +85°C - suitable for base station, industrial PLC, and transportation systems |
Applications
| Network Packet Buffer | Cache Memory Subsystem |
|---|---|
|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly to MAC controllers via synchronous burst reads/writes. Use Value: 150MHz operation and pipelined outputs sustain 5.4 Gbps sustained throughput (36-bit × 150MHz), matching 10GbE line rates. |
Use Scenario: Secondary cache for RISC-V or ARM-based SoCs in industrial gateways. IC Role / Device Role / Timing Role: Off-chip instruction/data cache with deterministic 3.8ns access enabling tight loop execution timing. Use Value: Single-cycle deselect and burst mode reduce average memory access time by >40% versus non-burst SRAMs in cache line fills. |
| Telecom Line Card Buffer | Real-Time Signal Processing FIFO |
|
Use Scenario: Jitter buffering in TDM-over-Packet (TDMoIP) gateways handling E1/T1 streams. IC Role / Device Role / Timing Role: Synchronous FIFO staging point between framer IC and packet processor with precise clock domain crossing. Use Value: ZZ sleep mode cuts standby power to 70mA, enabling hot-swap line cards with thermal budget constraints. |
Use Scenario: Input/output buffering for multi-channel ADC/DAC in radar signal conditioning modules. IC Role / Device Role / Timing Role: Deterministic-latency data staging between sampling engine and DSP core using burst-aligned transfers. Use Value: Linear/interleaved burst selection (LBO) matches FFT twiddle factor addressing patterns, eliminating software address calculation overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-167AXC | 256K × 36, 167MHz max, 3.3V, 100-pin TQFP - faster clock but higher IDD (380mA) | Higher performance margin for future-proofing; less suitable where thermal/power envelope is constrained | Select when system clock exceeds 150MHz and board layout accommodates higher power dissipation |
| AS7C3256A-15JCIN | 256K × 36, 150MHz, 3.3V, 100-pin TQFP - no burst mode, no LBO, simpler control logic | Eliminates burst sequencing complexity; requires external address generation for multi-word transfers | Select for cost-sensitive designs where burst functionality is unused and controller handles address incrementing |
Compared with CY7C1371BV33-167AXC and AS7C3256A-15JCIN, the 71V67603S150BQI8 uniquely balances industrial-grade reliability, integrated burst addressing, and low sleep current - making it optimal for thermally constrained telecom and embedded systems requiring deterministic latency.
Availability
71V67603S150BQI8 is available at Aetrix Electronics and suitable for network packet buffering, cache memory subsystems, telecom line card buffering, and real-time signal processing FIFOs requiring stable component supply across extended product lifecycles.
Supply support for 71V67603S150BQI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, and RF solutions for communications and computing infrastructure.
The 71V67603S150BQI8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for bandwidth-intensive applications in networking equipment, base stations, and industrial controllers demanding sub-4ns access and robust burst operation.
FAQ
What is the maximum operating frequency and corresponding access time for the 71V67603S150BQI8?
The 71V67603S150BQI8 is rated for 150MHz operation with a guaranteed clock-to-valid-data access time of 3.8ns under industrial conditions (−40°C to +85°C). This specification is measured with VDD and VDDQ at 3.3V ±5%, and applies to both 256K × 36 and 512K × 18 configurations. The device also supports 166MHz (3.5ns) and 133MHz (4.2ns) speed grades, but the 'S150' suffix confirms the 150MHz qualification for the 71V67603S150BQI8.
How does the LBO pin affect burst addressing behavior in the 71V67603S150BQI8?
The LBO (Linear Burst Order) pin on the 71V67603S150BQI8 statically configures the internal burst counter sequence: when LBO is LOW, the device uses linear burst order (00→01→10→11); when HIGH, it uses interleaved order (00→01→11→10). This selection determines how successive burst words map to physical addresses and must remain stable during operation. The 71V67603S150BQI8 datasheet defines both sequences in Tables 14 and 15, and LBO has no effect on non-burst (single-cycle) accesses.
What power-saving modes does the 71V67603S150BQI8 support, and what are their current draw specifications?
The 71V67603S150BQI8 supports three low-power states: CMOS Standby (ISB1 ≤70mA), Clock-Running Standby (ISB2 ≤175mA), and Full Sleep Mode (IZZ ≤70mA). Full Sleep is activated by driving the ZZ pin HIGH, which gates the internal clock and reduces current while retaining data. All values are specified at VDD = 3.465V, VDDQ = 3.465V, and industrial temperature. The 71V67603S150BQI8 does not require power supply sequencing, but VDD and VDDQ must ramp monotonically.
Can the 71V67603S150BQI8 be used in both 256K × 36 and 512K × 18 configurations, and how is this selected?
Yes, the 71V67603S150BQI8 supports both 256K × 36 and 512K × 18 organizations through address pin mapping - no hardware configuration is required. In 256K × 36 mode, A0–A17 address the 256K depth with 36-bit width; in 512K × 18 mode, A0–A18 address the 512K depth with 18-bit width (using only half the I/O pins). Pin configurations differ between modes (e.g., BW3/BW4 are unused in 512K × 18), as shown in IDT drawings 5310 drw 03 and 5301 drw 02. The 71V67603S150BQI8 functions identically in either mode once the system addresses accordingly.
What are the key timing parameters that define the 71V67603S150BQI8's pipelined read cycle?
The 71V67603S150BQI8 pipelined read cycle is defined by tCD (clock-to-valid-data ≤3.8ns), tCLZ (clock-to-output-active = 0ns), and tCHZ (clock-to-high-Z ≤3.8ns). First data appears one clock cycle after address latch (pipelined), and subsequent burst words follow on consecutive CLK edges. Critical setup/hold times include tSA (address setup ≥1.5ns), tSS (ADSP/ADSC setup ≥1.5ns), and tOE (output enable access ≤3.8ns). These parameters are fully characterized across voltage and temperature for the 71V67603S150BQI8 industrial grade.
71V67603S150BQI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67603S150BQI8 FAQ
1.How can I place an order for 71V67603S150BQI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67603S150BQI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67603S150BQI8 reliable?
The price and inventory of 71V67603S150BQI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S150BQI8 is usually 5 days.
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4.How is shipping managed for 71V67603S150BQI8?
71V67603S150BQI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67603S150BQI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67603S150BQI8?
For technical support, including 71V67603S150BQI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S150BQI8 requirements.
6.How does Aetrix verify that 71V67603S150BQI8 is sourced from the original manufacturer or authorized distributors?
All 71V67603S150BQI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S150BQI8 meets industry standards.
7.What is the process for return or replacement of 71V67603S150BQI8?
All 71V67603S150BQI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S150BQI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67603S150BQI8 part is unused and in its original packaging.
Return procedure for 71V67603S150BQI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67603S150BQI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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