My Inquiry
My Account
Renesas 71V67603S150PFG
- Part No.:
- 71V67603S150PFG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V67603S150PFG.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:2,000
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V67603S150PFG from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports interleaved/linear burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW4), and operates across commercial temperature range (0°C to +70°C). Used in high-speed networking buffers and cache subsystems requiring deterministic latency.
For engineers reviewing the 71V67603S150PFG datasheet, 71V67603S150PFG pinout, 71V67603S150PFG application, or 71V67603S150PFG equivalent, key selection criteria include burst mode timing compliance, ZZ sleep current (≤70mA), VDDQ = 3.3V ±5% I/O supply tolerance, and TQFP-100 package compatibility with JEDEC MO-140 standard footprint.
Technical Context
This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs-triggered on CLK rising edge. Its internal burst counter generates four sequential addresses per initial address, with output pipelining delivering first data one cycle after CLK edge and subsequent data on successive edges.
The device supports two memory configurations (256K×36 or 512K×18) via pin-strapping and package variant; 71V67603S150PFG is specifically the 256K×36 configuration in 100-pin TQFP. Write operations are self-timed using GW, BWE, and BWx signals, enabling precise byte-selectable writes without external timing logic.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36 bits (9Mbit total); enables 36-bit parallel data path for wide-bus systems like RISC CPU caches. |
| Max Clock Frequency | 150MHz (tCYC = 6.7ns); guarantees full-speed operation in 6.67ns system clocks with setup/hold margin. |
| Access Time | 3.8ns clock-to-data (tCD); defines worst-case latency from CLK rise to valid output for timing-critical burst reads. |
| Supply Voltages | VDD = 3.3V ±5%, VDDQ = 3.3V ±5%; separate core/I/O rails allow independent noise management and signal integrity optimization. |
| Operating Temperature | 0°C to +70°C (Commercial grade); validated for stable performance in office, telecom infrastructure, and industrial control panels. |
| Power Consumption | IDDACT = 260mA @150MHz (industrial); ISB2 = 150mA with clock running but deselected; IZZ = 70mA in full sleep mode. |
| Burst Mode Control | LBO pin selects linear or interleaved address sequence; static configuration requires no runtime reconfiguration logic. |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch, lead-free (Pb-free) and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on CLK edge with ADSP/ADSC; A0–A17 used for 256K×36 addressing (18-bit), A18 unused. |
| CLK | System Clock Input | Primary timing reference; all synchronous operations (read/write/burst advance) aligned to rising edge. |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates byte enables; BW1–BW4 select 9-bit bytes (I/O0–7+I/OP1, etc.) independently. |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances internal burst counter; ADSP (processor) and ADSC (cache controller) load address register synchronously. |
| OE | Asynchronous Output Enable | Controls I/O drivers independently of CLK; enables fast output disable during bus arbitration or power management. |
| ZZ | Asynchronous Sleep Mode | High-Z output and deep power-down when asserted HIGH; retains data with IZZ ≤70mA at VDD = 3.465V. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus; registered input/output paths ensure clean timing closure in high-speed designs. |
| VDD, VDDQ, VSS | Power & Ground | VDD (core), VDDQ (I/O), and VSS pins require dedicated decoupling; VDDQ separation prevents I/O switching noise from affecting core logic. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | First burst word appears one CLK cycle after address latch; eliminates wait states in processor interfaces requiring continuous data flow. |
| Single-Cycle Deselect | Chip deactivation completes within one CLK period-enables rapid bus sharing between multiple SRAMs or peripherals. |
| Self-Timed Write Cycle | Internal timing logic resolves write completion without external strobes; simplifies FPGA/CPLD control logic and reduces timing verification effort. |
| Byte-Write Selectability | Four independent 9-bit byte lanes (BW1–BW4) allow partial-word updates without read-modify-write cycles-critical for packet buffer management. |
| Linear/Interleaved Burst Order | LBO pin configures burst address sequence statically; matches Intel Pentium (interleaved) or PowerPC (linear) cache line layouts without firmware change. |
Applications
| Networking Packet Buffer | Real-Time DSP Cache |
|---|---|
|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decision and egress scheduling. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer providing 150MHz sustained read/write throughput with burst-aligned access to 36-bit data paths. Use Value: Enables line-rate 1Gbps+ switching by eliminating pipeline stalls during burst transfers-verified at tCD = 3.8ns under worst-case voltage/temperature. |
Use Scenario: Serving as L1 instruction/data cache for TI C6000 or Analog Devices SHARC DSPs executing real-time audio/video algorithms. IC Role / Device Role / Timing Role: Synchronous SRAM interfacing directly to DSP EMIF with pipelined outputs synchronized to DSP clock domain. Use Value: Reduces average instruction fetch latency by 40% vs. asynchronous SRAM due to deterministic 1-cycle pipelining and single-cycle deselect. |
| Industrial PLC Data Log | Radar Signal Processing FIFO |
|
Use Scenario: Capturing sensor telemetry (voltage, temperature, position) at 10kHz sample rate in programmable logic controllers with deterministic logging intervals. IC Role / Device Role / Timing Role: Non-volatile-buffered memory holding timestamped samples prior to SD card write; powered by backup battery during main power loss. Use Value: Guaranteed data retention in ZZ sleep mode (IZZ ≤70mA) extends battery life to >72 hours-validated across 0°C to +70°C operating range. |
Use Scenario: Acting as ping-pong FIFO between ADC front-end and FFT engine in automotive radar ECU, handling 12-bit I/Q samples at 50Msps. IC Role / Device Role / Timing Role: Dual-port-capable SRAM configured for simultaneous read (FFT engine) and write (ADC interface) via CE/CS partitioning. Use Value: Supports 150MHz burst reads/writes without interlock-enables continuous 50Msps streaming with zero dropped samples under worst-case timing margins. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-167AXC | 256K×32 organization, 167MHz max, 3.3V only (no VDDQ separation), 100-pin TQFP, no LBO or ADV support. | Lacks burst mode and pipelined outputs-requires external logic for multi-word transfers; unsuitable for cache-like burst access patterns. | Select only if system uses fixed 32-bit bus width and does not require burst addressing or low-latency pipelining. |
| AS7C33256PFSIG | 256K×32, 133MHz, 3.3V core/I/O, 100-pin TQFP, supports linear burst only (no LBO), no ZZ sleep mode. | No sleep mode (IZZ not specified); higher standby current (ISB1 = 100mA typical); lacks ADV/ADSC dual-address-status interface. | Choose only for cost-sensitive applications where sleep current and dual-cache-controller support are non-critical. |
Compared with CY7C1362BV33-167AXC and AS7C33256PFSIG, the 71V67603S150PFG delivers unique value through its configurable burst order (LBO), true pipelined output timing, and ultra-low 70mA sleep current-making it optimal for power-constrained, high-throughput embedded systems requiring deterministic burst behavior.
Availability
71V67603S150PFG is available at Aetrix Electronics and suitable for networking packet buffers, real-time DSP caches, industrial PLC data logs, and radar signal processing FIFOs requiring stable component supply and long-term obsolescence management.
Supply support for 71V67603S150PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics Corporation (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for industrial, automotive, and communications markets.
The 71V67603S150PFG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for cache, buffer, and FIFO applications in systems demanding sub-4ns access times, burst-mode efficiency, and robust commercial-temperature operation.
FAQ
What memory configuration does the 71V67603S150PFG support?
The 71V67603S150PFG is configured as 256K × 36 bits (9Mbit total), with address lines A0–A17 active and A18 unused. This organization provides a 36-bit data bus ideal for matching 32-bit processors with parity or ECC overhead, and is physically implemented in the 100-pin TQFP package with dedicated I/O0–I/O31 and I/OP1–I/OP4 pins.
Does the 71V67603S150PFG support both linear and interleaved burst modes?
Yes, the 71V67603S150PFG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, linear addressing is selected; when LBO = HIGH, interleaved addressing is used. The LBO pin is static and must not change during operation-its state is sampled at power-up or reset to configure the internal burst counter.
What is the function of the ZZ pin on the 71V67603S150PFG?
The ZZ pin on the 71V67603S150PFG is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and places the device into full sleep mode with supply current reduced to ≤70mA (industrial grade). Data retention is guaranteed during sleep, and recovery time (tZZR) is 100ns-enabling rapid wake-up for burst-intensive applications like radar sampling.
How does the 71V67603S150PFG handle byte-level writes?
The 71V67603S150PFG supports granular byte writes using BWE (Byte Write Enable) and four BWx inputs (BW1–BW4). With BWE LOW, each BWx controls a 9-bit byte lane: BW1 → I/O0–7 + I/OP1, BW2 → I/O8–15 + I/OP2, etc. Any active BWx disables all outputs during write-ensuring atomic partial-word updates without read-modify-write overhead.
Is the 71V67603S150PFG compatible with 3.3V-only system designs?
Yes, the 71V67603S150PFG operates with VDD = 3.3V ±5% (core) and VDDQ = 3.3V ±5% (I/O), making it fully compatible with 3.3V-only logic families. Its VIH/VIL thresholds (2.0V/0.8V) and output drive strength (VOH ≥2.4V at -8mA, VOL ≤0.4V at +8mA) meet standard 3.3V LVTTL and LVCMOS interface requirements without level-shifting.
71V67603S150PFG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V67603S150PFG FAQ
1.How can I place an order for 71V67603S150PFG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67603S150PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67603S150PFG reliable?
The price and inventory of 71V67603S150PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S150PFG is usually 5 days.
3.What payment methods are accepted for 71V67603S150PFG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67603S150PFG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V67603S150PFG?
71V67603S150PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67603S150PFG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67603S150PFG?
For technical support, including 71V67603S150PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S150PFG requirements.
6.How does Aetrix verify that 71V67603S150PFG is sourced from the original manufacturer or authorized distributors?
All 71V67603S150PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S150PFG meets industry standards.
7.What is the process for return or replacement of 71V67603S150PFG?
All 71V67603S150PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S150PFG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67603S150PFG part is unused and in its original packaging.
Return procedure for 71V67603S150PFG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67603S150PFG Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
