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Renesas 71V67603S150PFG8
- Part No.:
- 71V67603S150PFG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V67603S150PFG8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:3,130
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Product details
Overview
71V67603S150PFG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports interleaved/linear burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW4), and operates across commercial temperature range (0°C to +70°C) in a 100-pin TQFP package. It serves as high-speed cache or buffer memory in networking line cards and telecom baseband processors.
For engineers reviewing the 71V67603S150PFG8 datasheet, 71V67603S150PFG8 pinout, 71V67603S150PFG8 application, or 71V67603S150PFG8 equivalent, key selection criteria include burst timing compliance (tCD ≤ 3.8ns at 150MHz), 3.3V core/I/O supply separation (VDD/VDDQ), pipelined read latency, and TQFP-100 mechanical compatibility for legacy board reuse.
Technical Context
This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs-triggered on the rising edge of CLK. Its internal burst counter generates four sequential addresses per initial address, with output pipelining delivering first data one cycle after CLK edge and subsequent data on successive edges.
The device supports two distinct memory configurations: 256K × 36 (for 36-bit wide data paths) and 512K × 18 (for 18-bit paths), selected by pin strapping or system design-not runtime reconfiguration. Burst order (linear vs. interleaved) is statically controlled by the asynchronous LBO pin, which must remain stable during operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); enables full-word parallel access without external data multiplexing in 36-bit bus systems. |
| Clock Frequency / Access Time | 150MHz max, 3.8ns clock-to-data (tCD); guarantees deterministic read latency for real-time packet buffering. |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); independent supplies allow I/O voltage domain isolation from core logic noise. |
| Burst Mode | Four-word burst with programmable linear/interleaved order (LBO pin); reduces address bus traffic and improves sustained bandwidth. |
| Power Management | Asynchronous ZZ sleep mode (IZZ ≤ 70mA); cuts active current by >80% while retaining data during idle periods. |
| Output Behavior | Pipelined outputs with single-cycle deselect (tOHZ ≤ 3.8ns); eliminates bus contention during rapid chip enable transitions. |
| Write Control | Global Write (GW) + Byte Write Enable (BWE) + four BWx signals; enables atomic 36-bit writes or selective 9-bit byte updates. |
Pinout & Package
71V67603S150PFG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pin 1 marked via corner cutout; top-side marking includes "71V67603", date code, and manufacturer logo.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge when ADSP/ADSC asserted; A0–A17 used for 256K×36 mode. |
| CLK | System Clock Input | Primary timing reference; all synchronous operations (read/write/burst advance) are edge-triggered on rising edge. |
| ADSP / ADSC | Address Status Inputs | ADSP (processor) and ADSC (cache controller) load address register; both are synchronous, active-low, and gated by CE. |
| ADV | Burst Address Advance | Active-low synchronous signal that increments internal burst counter; held HIGH to suspend burst sequence. |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE enables byte write mode; BW1–BW4 select individual 9-bit bytes (I/O0–7/I/OP1, etc.). |
| OE | Output Enable | Asynchronous, active-low control of output drivers; allows immediate tri-state without waiting for clock edge. |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst, HIGH = interleaved burst; must not toggle during operation. |
| ZZ | Sleep Mode Input | Asynchronous, active-high entry into low-power retention mode; gates internal clock and reduces IZZ to ≤70mA. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus; registered input/output paths ensure setup/hold compliance at 150MHz. |
| VDD / VDDQ / VSS | Power Supplies | VDD (3.3V core), VDDQ (3.3V I/O), VSS (ground); separate VDD/VDDQ pins require independent decoupling for noise immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Output Architecture | Delivers first valid read data one clock cycle after address latch, enabling continuous burst throughput without pipeline stalls. |
| Single-Cycle Deselect | tOHZ ≤ 3.8ns ensures outputs enter high-impedance within one clock period after OE deassertion-critical for multi-SRAM bus sharing. |
| Configurable Burst Order | LBO pin selects linear (00→01→10→11) or interleaved (00→01→11→10) address sequences-matches CPU/cache controller addressing schemes. |
| Self-Timed Write Cycle | Internal timing logic eliminates external write pulse generation; write completion is determined internally based on GW/BWE/BWx state. |
| Independent Core/I/O Supplies | VDD (core logic) and VDDQ (I/O drivers) separation minimizes switching noise coupling from I/O activity into sensitive timing circuitry. |
| Low-Power Sleep Mode | ZZ-enabled sleep reduces supply current to ≤70mA while maintaining full data retention-ideal for power-gated subsystems. |
Applications
| Telecom Line Card Buffering | Network Processor Cache |
|---|---|
Use Scenario: High-throughput packet buffering in OC-192/STM-64 line interface units where deterministic latency and burst efficiency are critical. IC Role / Device Role / Timing Role: Primary 36-bit-wide synchronous cache between SERDES and framer ASIC, operating at 150MHz with pipelined reads. Use Value: 3.8ns tCD and single-cycle deselect prevent bus turnaround delays, sustaining >5 Gbps effective throughput under burst traffic. |
Use Scenario: Instruction/data cache for multi-core network processors handling deep packet inspection and QoS scheduling. IC Role / Device Role / Timing Role: Low-latency, burst-capable SRAM interfacing directly to processor's 36-bit external memory bus with ADSP/ADSC handshake. Use Value: Linear burst mode (LBO=LOW) aligns with processor's prefetch stride, reducing average access time by 30% versus random access. |
| Industrial PLC Motion Control | Avionics Data Acquisition Buffer |
Use Scenario: Real-time motion profile storage and interpolation in CNC controllers requiring jitter-free memory access synchronized to servo clock. IC Role / Device Role / Timing Role: Deterministic-access buffer holding trajectory tables; clocked from same 150MHz source as motion engine. Use Value: Guaranteed tCD ≤ 3.8ns and tCLZ = 0ns ensure output stability before next clock edge-eliminating timing uncertainty in closed-loop cycles. |
Use Scenario: High-reliability sensor data aggregation in flight management systems, where data integrity and power-down retention are mandatory. IC Role / Device Role / Timing Role: Buffered acquisition memory capturing ADC samples at 100+ MSPS, with ZZ sleep activated between bursts. Use Value: IZZ ≤ 70mA in sleep mode extends battery-backed operation; VDD/VDDQ separation prevents analog measurement corruption from digital switching. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-166AXC | 256K × 36, 166MHz (3.5ns tCD), 100-pin TQFP, but uses single 3.3V supply (no VDDQ separation). | Lacks independent I/O supply-less suitable for mixed-signal boards requiring strict VDDQ noise isolation. | Select when maximum speed (166MHz) is prioritized over I/O supply decoupling; verify layout noise margins. |
| AS7C33128PFS-15B | 256K × 36, 150MHz (3.8ns tCD), 100-pin TQFP, but no burst mode or LBO control-only random access. | No burst capability limits sustained bandwidth; lacks ADV/ADSP/ADSC interface for cache-coherent systems. | Select for cost-sensitive, non-burst applications like FPGA configuration buffers where pipelining isn't required. |
Compared with CY7C1371BV33-166AXC and AS7C33128PFS-15B, the 71V67603S150PFG8 uniquely delivers burst-mode flexibility with independent VDDQ, making it optimal for high-integrity, cache-linked designs where timing determinism and supply-domain isolation are non-negotiable.
Availability
71V67603S150PFG8 is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and avionics applications requiring stable component supply, long-lifecycle support, and RoHS-compliant packaging.
Supply support for 71V67603S150PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V67603S150PFG8 belongs to IDT's 71V67603/71V67803 family of pipelined synchronous SRAMs, engineered specifically for low-latency, burst-intensive applications in network processors, baseband ICs, and real-time control systems.
FAQ
What is the maximum supported clock frequency for the 71V67603S150PFG8?
The 71V67603S150PFG8 is rated for 150MHz operation, corresponding to a minimum clock cycle time (tCYC) of 6.7ns and a maximum clock-to-data delay (tCD) of 3.8ns. While the 71V67603 family includes a 166MHz variant, the S150 suffix explicitly denotes the 150MHz speed grade. Operating beyond this frequency violates guaranteed timing and may result in data corruption or metastability.
Does the 71V67603S150PFG8 support both 256K×36 and 512K×18 configurations on the same device?
No-the 71V67603S150PFG8 is specifically configured as 256K × 36 (9Mbit). The 512K × 18 organization is implemented in the pin-compatible but functionally distinct 71V67803 variant. Pinouts differ between the two (e.g., BW3/BW4 presence, NC placements), and the 71V67603S150PFG8 does not support 512K×18 addressing or data mapping.
How does the LBO pin affect burst behavior in the 71V67603S150PFG8?
The LBO (Linear Burst Order) pin is an asynchronous static input: when pulled LOW (≤0.8V), it selects linear burst order (00→01→10→11); when pulled HIGH (≥2.0V), it selects interleaved order (00→01→11→10). The 71V67603S150PFG8 requires LBO to remain stable during all burst operations-changing it mid-burst causes undefined address sequencing and potential data errors.
Can the 71V67603S150PFG8 operate with only VDD powered, leaving VDDQ unconnected?
No-both VDD (core) and VDDQ (I/O) must be supplied with 3.3V ±5% for functional operation. Leaving VDDQ unconnected disables all I/O drivers and causes undefined behavior on data pins. The datasheet specifies separate decoupling requirements for each supply, and VDDQ must ramp concurrently with or after VDD during power-up to avoid latch-up.
What is the purpose of the ZZ pin, and how does it interact with clocking in the 71V67603S150PFG8?
The ZZ pin is an asynchronous active-HIGH input that places the 71V67603S150PFG8 into full sleep mode, gating the internal clock and reducing supply current to ≤70mA while retaining memory contents. When ZZ is asserted, CLK is ignored-no internal timing occurs-and all outputs go high-impedance regardless of OE state. Recovery requires tZZR ≥100ns after ZZ deassertion before valid accesses resume.
71V67603S150PFG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 150 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V67603S150PFG8 FAQ
1.How can I place an order for 71V67603S150PFG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67603S150PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67603S150PFG8 reliable?
The price and inventory of 71V67603S150PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S150PFG8 is usually 5 days.
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Once your 71V67603S150PFG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67603S150PFG8?
For technical support, including 71V67603S150PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S150PFG8 requirements.
6.How does Aetrix verify that 71V67603S150PFG8 is sourced from the original manufacturer or authorized distributors?
All 71V67603S150PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S150PFG8 meets industry standards.
7.What is the process for return or replacement of 71V67603S150PFG8?
All 71V67603S150PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S150PFG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67603S150PFG8 part is unused and in its original packaging.
Return procedure for 71V67603S150PFG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67603S150PFG8 Tags
-
M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
Microchip Technology
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