Renesas 71V67603S150PFGI

Overview

71V67603S150PFGI from IDT (now Renesas) is a 256K × 36-bit or 512K × 18-bit 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and burst-mode operation. It delivers 150MHz clock speed with 3.8ns clock access time, supports interleaved/linear burst via LBO pin, and features global write (GW), byte write enables (BW1–BW4), and asynchronous sleep mode (ZZ). It is used in high-bandwidth networking buffers and cache subsystems requiring deterministic timing.

For engineers reviewing the 71V67603S150PFGI datasheet, 71V67603S150PFGI pinout, 71V67603S150PFGI application, or 71V67603S150PFGI equivalent, key selection criteria include burst address sequencing control (LBO), self-timed write with BWE/GW arbitration, pipelined read latency, 3.3V I/O compatibility (VDDQ), and TQFP-100 packaging for board-level signal integrity in telecom line cards.

Technical Context

The 71V67603S150PFGI implements a synchronous dual-register architecture: address, data input, and output registers are all clocked on the rising edge of CLK. Burst addressing is managed by an internal binary counter gated by ADV and configured by LBO for linear or interleaved sequences - critical for cache-line-aligned memory access in RISC processors.

Its self-timed write cycle resolves write completion dynamically using GW, BWE, and BWx inputs, eliminating fixed write pulse requirements. Power management includes three low-power states: standby (CS deasserted), clock-running standby (CS deasserted but CLK active), and full sleep (ZZ = HIGH), with ISB1 ≤ 70mA and IZZ ≤ 70mA over industrial temperature range.

Key Specifications

Pinout & Package

71V67603S150PFGI is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, with 0.5mm pitch. Pin 1 marked at top-left corner; pins numbered counterclockwise. VDD/VSS and VDDQ/VSS distributed across perimeter for low-impedance power delivery and noise suppression.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-167AXC and AS7C33256PFSI-15, the 71V67603S150PFGI uniquely balances 150MHz performance with low-power sleep (IZZ ≤ 70mA), configurable burst ordering (LBO), and true single-cycle deselect - making it optimal for thermally constrained, latency-sensitive telecom and industrial control systems.

Availability

71V67603S150PFGI is available at Aetrix Electronics and suitable for networking buffer memory, cache controller interfaces, telecom baseband processing, and industrial real-time controller memory requiring stable component supply across extended product lifecycles.

Supply support for 71V67603S150PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.

The 71V67603S150PFGI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for applications demanding deterministic burst-mode access, low-latency pipelined reads, and robust industrial temperature operation in infrastructure equipment.

FAQ

What is the maximum supported clock frequency for the 71V67603S150PFGI?

The 71V67603S150PFGI is rated for 150MHz operation with guaranteed 3.8ns clock-to-data (tCD) access time under industrial temperature conditions (−40°C to +85°C). While the family includes a 166MHz variant (71V67603S166), the S150 suffix explicitly denotes the 150MHz grade, and its AC specifications are validated only up to that frequency.

Does the 71V67603S150PFGI support both 256K × 36 and 512K × 18 configurations on the same device?

Yes, the 71V67603S150PFGI is a single device supporting both organizations: 256K × 36-bit (using A0–A17) and 512K × 18-bit (using A0–A18). The configuration is determined by address decoding outside the SRAM - no mode pin or internal register selects between them. Pin assignments differ slightly between modes, as shown in the 100-pin TQFP configuration diagrams.

How does the LBO pin affect burst behavior in the 71V67603S150PFGI?

The LBO (Linear Burst Order) pin is an asynchronous static input: when pulled LOW, it configures the internal burst counter for linear sequence (00→01→10→11); when HIGH, it selects interleaved order (00→01→11→10). This setting must be stable before burst initiation and cannot change mid-burst. The 71V67603S150PFGI uses this to match CPU or DSP cache-line addressing schemes.

What power states does the 71V67603S150PFGI support, and how is sleep mode entered?

The 71V67603S150PFGI supports three low-power states: standby (CS deasserted), clock-running standby (CS deasserted but CLK active), and full sleep (ZZ = HIGH). Sleep mode is entered asynchronously by driving ZZ HIGH, which gates the internal clock and reduces supply current to ≤70mA while retaining data. No clock or command sequence is required for entry or exit.

Is the 71V67603S150PFGI pin-compatible with other devices in the 71V67603/71V67803 family?

The 71V67603S150PFGI shares the same 100-pin TQFP footprint and pinout with the 71V67803 series, but differs in functional pin mapping: BW3/BW4 are unused on 71V67803 (512K × 18 only), whereas 71V67603S150PFGI fully utilizes all four byte write enables. Thus, it is not drop-in compatible with 71V67803 without verifying BW3/BW4 connection intent in the target design.