Renesas 71V67603S150PFGI8

Overview

71V67603S150PFGI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 150MHz operation (3.8ns clock access time). It supports interleaved/linear burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW4), and operates across industrial temperature range (−40°C to +85°C) in a 100-pin TQFP package. Used in high-speed networking buffers and real-time DSP data caches.

For engineers reviewing the 71V67603S150PFGI8 datasheet, 71V67603S150PFGI8 pinout, 71V67603S150PFGI8 application, or 71V67603S150PFGI8 equivalent, this page delivers verified timing parameters, JEDEC-compliant TQFP pin mapping, burst-mode behavior under ADV/LBO control, and validated alternatives for memory subsystem redesigns requiring 3.3V I/O, pipelined read latency, and low-power sleep mode (ZZ).

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs-triggered on the rising edge of CLK. Its internal burst counter generates four sequential addresses per initial address, with output pipelining delivering first data one cycle after CLK edge and subsequent data on successive edges.

The device supports two distinct memory configurations: 256K × 36 (full-width data path) and 512K × 18 (half-width), selected by internal organization-not external pins. Burst order (linear vs. interleaved) is statically controlled by the asynchronous LBO pin, which must remain stable during operation.

Key Specifications

Pinout & Package

71V67603S150PFGI8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pin 1 marked via corner notch; top-side marking includes "71V67603S150PFGI8" and date code.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV33-167AXC and AS7C33256PFSIG, the 71V67603S150PFGI8 uniquely combines 150 MHz pipelined burst reads, LBO-selectable addressing, and industrial temperature support in a JEDEC-standard TQFP-making it optimal for deterministic, high-throughput embedded memory subsystems.

Availability

71V67603S150PFGI8 is available at Aetrix Electronics and suitable for high-speed network packet buffers, real-time DSP data caches, industrial motion controllers, avionics display frame buffers, and telecom baseband processing requiring stable component supply across extended temperature ranges.

Supply support for 71V67603S150PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, designs high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.

The 71V67603S150PFGI8 belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for deterministic, low-latency memory subsystems in networking, radar, and real-time control applications.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67603S150PFGI8?

The 71V67603S150PFGI8 is rated for 150 MHz operation with a guaranteed clock-to-data access time (tCD) of 3.8 ns. This specification applies across the full industrial temperature range (−40°C to +85°C) and with VDD/VDDQ = 3.3 V ±5%. The device also supports 166 MHz (3.5 ns) and 133 MHz (4.2 ns) variants, but the 71V67603S150PFGI8 is specifically characterized and screened for 150 MHz performance.

How does the LBO pin affect burst addressing behavior in the 71V67603S150PFGI8?

In the 71V67603S150PFGI8, the LBO (Linear Burst Order) pin is an asynchronous static input that selects between two burst address sequences: when LBO = LOW, the device uses linear burst order (00→01→10→11); when LBO = HIGH, it uses interleaved burst order (00→01→11→10). The LBO state must be stable before and during burst operation-changing it mid-burst may cause undefined address sequencing.

Does the 71V67603S150PFGI8 support partial-word writes, and how are they implemented?

Yes, the 71V67603S150PFGI8 supports partial-word writes via four independent byte write enables (BW1–BW4), each controlling a 9-bit segment of the 36-bit data bus (e.g., BW1 → I/O0–I/O7 + I/OP1). These operate under control of the synchronous BWE (byte write enable) input: when BWE = LOW, active BWx signals gate corresponding byte writes; when BWE = HIGH, only GW (global write) is functional.

What power-saving modes does the 71V67603S150PFGI8 offer, and how is sleep mode activated?

The 71V67603S150PFGI8 offers three low-power states: standby (ISB1 ≤ 70 mA), clock-running standby (ISB2 ≤ 175 mA), and full sleep mode (IZZ ≤ 70 µA). Sleep mode is activated asynchronously by driving the ZZ pin HIGH; this internally gates the CLK path and shuts down dynamic circuitry while retaining data. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW.

Is the 71V67603S150PFGI8 pin-compatible with other members of the 71V67603/71V67803 family, such as the 71V67803S150PFGI8?

No-the 71V67603S150PFGI8 and 71V67803S150PFGI8 share the same 100-pin TQFP package and pinout, but differ functionally: the 71V67603S150PFGI8 supports 256K × 36 / 512K × 18 configurations and includes BW3/BW4 pins, whereas the 71V67803S150PFGI8 is 512K × 18-only and omits BW3/BW4. Pin compatibility exists physically, but electrical and functional substitution requires validation of byte-write requirements and memory depth.