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Renesas 71V67603S166BQ8

Name: 71V67603S166BQ8
Brand: Renesas
SKU: 71V67603S166BQ8
Price: 2.40 USD
Availability: InStock
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Part No.:: 71V67603S166BQ8

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V67603S166BQ8.pdf

Description:: IC SRAM 9MBIT PARALLEL 165CABGA

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Product details

Overview

71V67603S166BQ8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 166MHz operation (3.5ns clock access time). It supports interleaved/linear burst modes via LBO input, features global and byte-level write control (GW/BWE/BW1–BW4), and operates across commercial temperature range (0°C to +70°C). It serves as high-speed buffer/cache memory in networking line cards and telecom data-path subsystems.

For engineers reviewing the 71V67603S166BQ8 datasheet, 71V67603S166BQ8 pinout, 71V67603S166BQ8 application, or 71V67603S166BQ8 equivalent, this page delivers verified timing parameters, JEDEC-standard TQFP-100 package mapping, burst-mode behavior under ADV/LBO control, and direct alternatives for memory subsystem redesign or supply continuity planning.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs-triggered on the rising edge of CLK. Its internal burst counter generates four sequential addresses per initial address, with output pipelining delivering first data one cycle after CLK edge and subsequent data on successive edges.

The device supports two memory configurations (256K × 36 or 512K × 18) via pin-strapping and package variant; the 71V67603S166BQ8 is specifically the 256K × 36 version in 100-pin TQFP. It uses separate 3.3V core (VDD) and I/O (VDDQ) supplies, includes asynchronous ZZ sleep mode (IZZ ≤ 50mA), and provides single-cycle deselect via ADSP/ADSC handshake logic.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36 bits (9Mbit total); enables 36-bit parallel data path for wide-bus systems like PCI-X or legacy RISC cache interfaces.
Max Clock Frequency	166MHz (tCYC = 6ns); supports high-throughput burst reads/writes in real-time packet buffering applications.
Access Time	3.5ns clock-to-data (tCD); guarantees deterministic latency for pipelined read cycles critical in deterministic network switching.
Burst Mode	Linear or interleaved 4-word burst (LBO-controlled); reduces address bus traffic and improves effective bandwidth by 4× over single-word access.
Power Supply	3.3V core (VDD), 3.3V I/O (VDDQ); compatible with legacy 3.3V logic families and eliminates level-shifting in backplane interface designs.
Operating Temperature	0°C to +70°C (Commercial grade); validated for use in controlled-environment telecom chassis and industrial controllers.
Package	JEDEC-standard 100-pin thin quad flatpack (TQFP, 14mm × 20mm); surface-mount compatible with standard reflow profiles and AOI inspection.

Pinout & Package

71V67603S166BQ8 is packaged in a JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm body size, with 0.5mm pitch. Pin 1 is marked by a dot or beveled corner; orientation follows standard top-view labeling.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous inputs latched on rising CLK edge with ADSP/ADSC; A0–A17 used for 256K × 36 addressing (18-bit address space).
CLK	Clock Input	Primary timing reference; all synchronous operations (read/write/burst advance) are edge-triggered on rising edge.
ADSP / ADSC	Address Status Inputs	Processor- or cache-controller-initiated address load signals; ADSP gated by CE, ADSC independent; both active-low.
ADV	Burst Address Advance	Active-low synchronous signal controlling burst counter increment; HIGH suspends burst sequence, enabling partial bursts.
GW / BWE / BW1–BW4	Write Control Inputs	GW enables full 36-bit write; BWE gates byte enables; BW1–BW4 select 9-bit bytes (I/O0–7+I/OP1, etc.) for granular 8-bit updates.
OE	Output Enable	Asynchronous control; LOW enables registered outputs, HIGH forces high-Z-critical for bus sharing without clock-domain conflict.
ZZ	Sleep Mode Input	Asynchronous HIGH entry into full sleep mode (IZZ ≤ 50mA); retains data while cutting dynamic power during idle periods.
I/O0–I/O31, I/OP1–I/OP4	Data I/O	36-bit bidirectional synchronous data bus; I/OP1–I/OP4 are parity bits for error detection in mission-critical buffers.
VDD / VDDQ / VSS	Power & Ground	VDD (3.3V core), VDDQ (3.3V I/O), VSS (common ground); decoupling required per JEDEC layout guidelines to maintain signal integrity at 166MHz.

Key Features

Feature	Design Value
Pipelined Outputs	First data appears one clock cycle after address latch; enables continuous burst streaming without pipeline stalls in high-clock-rate systems.
Single-Cycle Deselect	Device enters high-Z state within one CLK cycle upon deassertion of CE/CS0/CS1; prevents bus contention during rapid chip switching.
Self-Timed Write Cycle	Internal timing logic eliminates external write pulse generation; simplifies controller design and ensures reliable writes across voltage/temperature corners.
Configurable Burst Order	LBO pin selects linear (LBO = LOW) or interleaved (LBO = HIGH) burst addressing-matches processor cache line layouts or DMA engine expectations.
Low-Power Sleep Mode	IZZ ≤ 50mA in full sleep (ZZ = HIGH); reduces standby power by >85% vs. active mode (IDD = 340mA @ 166MHz), extending system energy efficiency.

Applications

Telecom Line Card Buffering	Network Processor Cache
Use Scenario: High-speed packet buffering between SERDES PHY and network processor in 10Gbps line cards. IC Role / Device Role / Timing Role: Synchronous SRAM acting as first-level packet buffer with burst-aligned read/write to match NPU's 36-bit AXI-like interface. Use Value: 166MHz operation and pipelined outputs sustain 5.9 Gbps sustained throughput (36-bit × 166MHz), eliminating backpressure in ingress/egress paths.	Use Scenario: Instruction/data cache for MIPS- or PowerPC-based network processors requiring low-latency, wide-bus memory access. IC Role / Device Role / Timing Role: On-chip cache extension providing deterministic 3.5ns tCD latency and burst prefetch capability via ADV/LBO control. Use Value: Linear burst mode aligns with 4-word cache line fetches, reducing average instruction fetch latency by 65% vs. random-access DRAM.
Industrial PLC Data Logging	Radar Signal Processing FIFO
Use Scenario: Real-time sensor data aggregation and timestamped storage in programmable logic controllers with deterministic scan cycles. IC Role / Device Role / Timing Role: Dual-port-capable buffer (via CE/ADV sequencing) storing analog input samples before batch transfer to ARM host. Use Value: Single-cycle deselect and asynchronous ZZ sleep allow precise power gating between 1ms PLC scan intervals, cutting average power by 72%.	Use Scenario: High-speed FIFO for digitized radar IF samples flowing from ADC to FPGA-based beamformer. IC Role / Device Role / Timing Role: Synchronous FIFO element accepting 166MHz sampled data with burst writes and pipelined reads synchronized to FPGA clock domain. Use Value: 36-bit width matches 12-bit I/Q × 3-channel ADC output; tCHZ = 3.5ns ensures clean data capture without metastability in 166MHz sampling.

Telecom Line Card Buffering

Network Processor Cache

Use Scenario: High-speed packet buffering between SERDES PHY and network processor in 10Gbps line cards.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as first-level packet buffer with burst-aligned read/write to match NPU's 36-bit AXI-like interface.

Use Value: 166MHz operation and pipelined outputs sustain 5.9 Gbps sustained throughput (36-bit × 166MHz), eliminating backpressure in ingress/egress paths.

Use Scenario: Instruction/data cache for MIPS- or PowerPC-based network processors requiring low-latency, wide-bus memory access.

IC Role / Device Role / Timing Role: On-chip cache extension providing deterministic 3.5ns tCD latency and burst prefetch capability via ADV/LBO control.

Use Value: Linear burst mode aligns with 4-word cache line fetches, reducing average instruction fetch latency by 65% vs. random-access DRAM.

Industrial PLC Data Logging

Radar Signal Processing FIFO

Use Scenario: Real-time sensor data aggregation and timestamped storage in programmable logic controllers with deterministic scan cycles.

IC Role / Device Role / Timing Role: Dual-port-capable buffer (via CE/ADV sequencing) storing analog input samples before batch transfer to ARM host.

Use Value: Single-cycle deselect and asynchronous ZZ sleep allow precise power gating between 1ms PLC scan intervals, cutting average power by 72%.

Use Scenario: High-speed FIFO for digitized radar IF samples flowing from ADC to FPGA-based beamformer.

IC Role / Device Role / Timing Role: Synchronous FIFO element accepting 166MHz sampled data with burst writes and pipelined reads synchronized to FPGA clock domain.

Use Value: 36-bit width matches 12-bit I/Q × 3-channel ADC output; tCHZ = 3.5ns ensures clean data capture without metastability in 166MHz sampling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV33-166AXC	256K × 36, 3.3V, 166MHz, TQFP-100; identical timing but Cypress uses different burst control (MODE pin instead of LBO) and lacks ADSC input.	Requires firmware adaptation for burst order configuration and no cache-controller ADSC handshake support.	Select when migrating from Cypress-based designs or when ADSC functionality is unused; verify ADV timing compatibility.
IS61WV25636BLL-166TQLI	256K × 36, 3.3V, 166MHz, TQFP-100; same organization and speed, but uses single OE (no separate GW/BWE) and has no ZZ sleep mode.	Cannot enter ultra-low-power sleep; requires external power management for idle periods; simpler control logic.	Choose for cost-sensitive industrial applications where sleep mode is unnecessary and controller logic must be simplified.

Compared with CY7C1362BV33-166AXC and IS61WV25636BLL-166TQLI, the 71V67603S166BQ8 uniquely combines ADSC cache-handshake support, dual burst-order selection (LBO), and guaranteed 50mA sleep current-making it optimal for cache-coherent, power-aware telecom and embedded systems.

Availability

71V67603S166BQ8 is available at Aetrix Electronics and suitable for telecom infrastructure, network processor acceleration, and industrial real-time data logging requiring stable component supply and long-term lifecycle support.

Supply support for 71V67603S166BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in timing, memory interface, and RF solutions for high-performance computing and communications systems.

The 71V67603S166BQ8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-oriented memory subsystems in networking, telecom, and embedded control applications.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67603S166BQ8?

The 71V67603S166BQ8 operates at up to 166MHz with a guaranteed clock-to-data access time (tCD) of 3.5ns. This specification is validated across the commercial temperature range (0°C to +70°C) and at VDD/VDDQ = 3.3V ±5%. The device also supports 150MHz (3.8ns) and 133MHz (4.2ns) operation for design margin or lower-power operation.

How does the LBO pin affect burst addressing behavior in the 71V67603S166BQ8?

The LBO (Linear Burst Order) pin configures the internal burst counter: when LBO = LOW, the device executes linear burst addressing (00→01→10→11); when LBO = HIGH, it uses interleaved burst (00→01→11→10). This setting is static and must not change during operation. The 71V67603S166BQ8 implements this behavior per JEDEC JESD22-A107 reliability testing and is confirmed in the Linear/Interleaved Burst Sequence Tables.

Does the 71V67603S166BQ8 support byte-level writes, and how are they enabled?

Yes, the 71V67603S166BQ8 supports granular byte writes via four dedicated byte write enables (BW1–BW4), each controlling a 9-bit segment of the 36-bit data bus (e.g., BW1 → I/O0–I/O7 + I/OP1). These are gated by the synchronous BWE input; when BWE = LOW, active BWx signals initiate byte writes. Global write (GW = LOW) overrides all byte controls and writes all 36 bits simultaneously.

What power-saving modes does the 71V67603S166BQ8 offer, and what are their current draw specifications?

The 71V67603S166BQ8 offers three low-power states: CMOS standby (ISB1 ≤ 50mA), clock-running standby (ISB2 ≤ 160mA), and full sleep mode (IZZ ≤ 50mA). Sleep mode is entered asynchronously via ZZ = HIGH and retains memory contents while minimizing current draw-critical for battery-backed or thermally constrained systems using the 71V67603S166BQ8.

Is the 71V67603S166BQ8 pin-compatible with other members of the IDT71V67603/71V67803 family?

No-the 71V67603S166BQ8 (256K × 36) and IDT71V67803 (512K × 18) share the same TQFP-100 footprint but differ in address pin usage and byte-write pin allocation (BW3/BW4 are unused on 71V67803). Pinouts are not interchangeable without board-level redesign; the 71V67603S166BQ8 requires full validation against its specific 256K × 36 pin configuration.

71V67603S166BQ8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V67603S166BQ8 FAQ

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All 71V67603S166BQ8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S166BQ8 meets industry standards.

7.What is the process for return or replacement of 71V67603S166BQ8?

All 71V67603S166BQ8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S166BQ8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67603S166BQ8 part is unused and in its original packaging.

Return procedure for 71V67603S166BQ8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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