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Renesas 71V67603S166BQG
- Part No.:
- 71V67603S166BQG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67603S166BQG.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,909
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Product details
Overview
71V67603S166BQG from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 166MHz operation (3.5ns clock access time). It supports interleaved/linear burst modes via LBO input, features self-timed write with global and byte-level write control, and targets high-speed cache and buffer applications in networking and telecom systems.
For engineers reviewing the 71V67603S166BQG datasheet, 71V67603S166BQG pinout, 71V67603S166BQG application, or 71V67603S166BQG equivalent, key selection criteria include burst timing compliance, 3.3V I/O compatibility, TQFP-100 package footprint, sleep mode (ZZ) power management, and synchronous address status interface (ADSP/ADSC) for processor/cache coherency.
Technical Context
This SRAM implements a synchronous pipeline architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Burst addressing is managed by an internal binary counter synchronized to ADV, with sequence order determined by the static LBO pin state-linear (LBO = LOW) or interleaved (LBO = HIGH).
Write operations support four distinct modes: global write (GW), byte write enable (BWE) with individual BW1–BW4 selects, and combinations thereof-all self-timed and completed within one clock cycle. Power-down is controlled asynchronously via ZZ, enabling full-sleep current as low as 50mA at VDD = max.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-compatible variant mapping |
| Clock Frequency | 166MHz max - enables 3.5ns clock-to-data access for pipelined read bursts |
| Supply Voltages | VDD = 3.3V ±5% (core); VDDQ = 3.3V ±5% (I/O) - separate rails allow I/O voltage optimization |
| Burst Mode Control | LBO input selects linear or interleaved 4-word burst sequence - no external counter required |
| Power-Down Current | IZZ = 50mA (commercial temp) - achieved by asserting ZZ HIGH to gate internal clock |
| Output Timing | tCLZ = 0ns, tCHZ = 3.5ns - pipelined outputs deliver first data on next rising clock edge |
| Package | JEDEC-standard 100-pin TQFP (14mm × 20mm) - verified mechanical fit for high-density PCB layouts |
Pinout & Package
71V67603S166BQG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, with 0.5mm pitch. Pin 1 marked via corner cut; thermal pad not present. Compatible with standard reflow profiles for lead-free assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Input | Synchronous address register input; A0/A1 define burst word order per LBO mode |
| CLK | Clock Input | Rising-edge-triggered master timing reference for all synchronous registers |
| ADSP / ADSC | Address Status Input | Processor- or cache-controller-initiated address latch signal; asynchronous assertion enables burst start |
| ADV | Burst Address Advance | Controls internal counter increment; LOW enables burst progression, HIGH suspends |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 select 9-bit bytes (I/O0–7/I/OP1, etc.) |
| OE | Output Enable | Asynchronous control - LOW enables output drivers; HIGH forces high-Z regardless of clock |
| ZZ | Sleep Mode Input | Asynchronous entry to full-sleep mode; gates internal clock and reduces IDD to IZZ level |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous bus; registered input/output paths ensure timing closure |
| VDD / VDDQ / VSS | Power Supplies | VDD (core), VDDQ (I/O), VSS (ground) - decoupling required per JEDEC TQFP layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | First burst word appears on next CLK rising edge - eliminates wait states in high-throughput pipelines |
| Single-Cycle Deselect | Chip deactivation completes within one clock cycle - enables rapid context switching between memory banks |
| Self-Timed Write Cycle | No external write pulse timing constraints - internal logic terminates write based on GW/BWx sampling |
| Linear/Interleaved Burst Select | LBO pin statically configures burst order - matches processor cache line fetch patterns without firmware overhead |
| 3.3V Core + I/O Separation | Dual supply allows independent noise isolation and voltage margining for core logic vs. bus signaling |
| Full Sleep Mode (ZZ) | Reduces active current from 340mA to 50mA - critical for thermal management in dense packet buffers |
Applications
| Network Packet Buffer | High-Speed Cache Memory |
|---|---|
|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions. IC Role / Device Role / Timing Role: Synchronous burst-access buffer interfacing directly with MAC controllers and traffic managers. Use Value: 166MHz pipelined reads deliver 4×36-bit words per address cycle - sustains 2.376 Gbps line-rate throughput on 10GbE interfaces. |
Use Scenario: Secondary cache for RISC-based network processors requiring low-latency instruction/data fetch. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as L2 cache with ADSP/ADSC handshake to CPU. Use Value: Single-cycle deselect and 3.5ns tCD minimize cache miss penalty - improves average instruction execution rate by >12% vs. async SRAM. |
| Telecom Baseband Buffer | Industrial Real-Time Controller Memory |
|
Use Scenario: Temporary storage of OFDM symbol data in LTE/5G baseband processing units. IC Role / Device Role / Timing Role: Burst-mode data buffer synchronized to DSP clock domain via ADV and CLK. Use Value: Linear burst mode (LBO = LOW) aligns with sequential FFT/IFFT memory access - eliminates address calculation overhead. |
Use Scenario: Deterministic data logging and motion control trajectory buffering in PLCs and CNC systems. IC Role / Device Role / Timing Role: Industrial-temperature SRAM (−40°C to +85°C) providing jitter-free memory access under EMI stress. Use Value: ZZ-controlled sleep mode cuts standby power by 85% during idle intervals - extends system uptime in battery-backed controllers. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 71V67603S150BQG | 150MHz max frequency (3.8ns tCD); identical pinout, timing, and feature set | Lower bandwidth requirement; suitable where 166MHz headroom is unnecessary | Select when system clock budget permits relaxed timing margins and lower power consumption is prioritized |
| 71V67803S166BQG | 512K × 18-bit organization (same density); shares all control logic but differs in address/data pin mapping | Requires PCB layout change due to different A10–A18 and I/O pin assignments | Choose only if 18-bit bus width matches system architecture and board revision allows routing update |
Compared with 71V67603S150BQG, the 71V67603S166BQG delivers 11% higher bandwidth at same power envelope; versus 71V67803S166BQG, it provides native 36-bit interface without data bus multiplexing or glue logic.
Availability
71V67603S166BQG is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache memory, telecom baseband processing, and industrial real-time controller applications requiring stable component supply across commercial and industrial temperature ranges.
Supply support for 71V67603S166BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, designs high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V67603S166BQG belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable memory subsystems in packet-forwarding and real-time signal processing systems.
FAQ
What is the maximum operating frequency of the 71V67603S166BQG?
The 71V67603S166BQG is rated for 166MHz operation, corresponding to a 6ns clock cycle time and 3.5ns clock-to-data (tCD) access time. This specification applies under commercial temperature conditions (0°C to +70°C) with VDD and VDDQ at 3.3V ±5%. The device maintains full functionality at this speed without derating when setup/hold timing margins are met.
Does the 71V67603S166BQG support both linear and interleaved burst modes?
Yes, the 71V67603S166BQG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the device executes linear burst order; when driven HIGH, it uses interleaved order. LBO is a static configuration input and must remain stable during operation to prevent burst sequence corruption.
How does the ZZ pin function in the 71V67603S166BQG?
The ZZ pin on the 71V67603S166BQG provides asynchronous entry into full-sleep mode. When ZZ is driven HIGH, the internal clock is gated and core logic is powered down, reducing supply current to 50mA (commercial grade). Data retention is guaranteed during sleep mode. Recovery requires tZZR ≥ 100ns after ZZ returns LOW before valid operations resume.
What is the purpose of the ADSP and ADSC pins on the 71V67603S166BQG?
ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) are synchronous address latch signals that initiate burst sequences. ADSP is gated by CE and used for CPU-initiated accesses; ADSC operates independently for cache-coherent systems. Both trigger the address register on the rising edge of CLK when asserted LOW, enabling precise synchronization with host bus protocols.
Can the 71V67603S166BQG be used in industrial temperature applications?
Yes, the 71V67603S166BQG is qualified for industrial temperature range (−40°C to +85°C) with specified performance including 133MHz operation (4.2ns tCD), ISB1 standby current ≤70mA, and full-sleep current IZZ ≤70mA. All DC and AC parameters in the datasheet are guaranteed across this range, making it suitable for ruggedized networking and automation equipment.
71V67603S166BQG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67603S166BQG FAQ
1.How can I place an order for 71V67603S166BQG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67603S166BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of 71V67603S166BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S166BQG is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
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6.How does Aetrix verify that 71V67603S166BQG is sourced from the original manufacturer or authorized distributors?
All 71V67603S166BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S166BQG meets industry standards.
7.What is the process for return or replacement of 71V67603S166BQG?
All 71V67603S166BQG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S166BQG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67603S166BQG part is unused and in its original packaging.
Return procedure for 71V67603S166BQG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67603S166BQG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
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AT24C08C-STUM-T
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