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Home > Products > Integrated Circuits (ICs) > Memory > Memory

Renesas 71V67603S166BQG8

Name: 71V67603S166BQG8
Brand: Renesas
SKU: 71V67603S166BQG8
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: 71V67603S166BQG8

Manufacturer:: Renesas

Category:: Memory

Package:: 165-TBGA

Datasheet:: 71V67603S166BQG8.pdf

Description:: IC SRAM 9MBIT PARALLEL 165CABGA

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Product details

Overview

71V67603S166BQG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 166MHz clock operation (3.5ns access time). It supports interleaved/linear burst modes via LBO input, features self-timed write with global/byte write control, and operates across commercial temperature range (0°C to +70°C). It is used in high-speed networking buffers and cache subsystems requiring deterministic low-latency memory access.

For engineers reviewing the 71V67603S166BQG8 datasheet, 71V67603S166BQG8 pinout, 71V67603S166BQG8 application, or 71V67603S166BQG8 equivalent, key selection criteria include burst-mode timing compliance, 3.3V I/O compatibility, TQFP-100 package footprint, ZZ sleep mode power-down behavior, and synchronous CE/CS0/CS1 chip-select logic for multi-chip memory banks.

Technical Context

The 71V67603S166BQG8 implements a synchronous, clock-driven architecture with registered address, data, and control inputs triggered on the rising edge of CLK. Its internal burst counter and pipelined output register enable four consecutive data words per address cycle, with first-word latency of one clock cycle and subsequent words aligned to successive CLK edges.

Burst order is selected statically via LBO (LOW = linear, HIGH = interleaved), and write operations support both global (GW) and byte-level (BW1–BW4) granularity under BWE gating. Power management includes asynchronous ZZ-controlled sleep mode (IZZ ≤ 50mA) and CMOS standby (ISB1 ≤ 50mA), with VDD and VDDQ independently supplied at 3.3V ±5%.

Key Specifications

Parameter	Value and Actual Design Meaning
Memory Organization	256K × 36-bit (9Mbit); supports 512K × 18-bit configuration via address mapping
Clock Frequency	166MHz max - enables 6ns cycle time with guaranteed 3.5ns clock-to-data (tCD) output valid delay
Supply Voltages	VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O) - requires dual 3.3V rails with independent decoupling
Burst Mode	Configurable linear or interleaved 4-word burst via LBO pin; no external counter needed
Write Control	Self-timed write with GW (all bytes) or BW1–BW4 (per 9-bit byte) under BWE synchronization
Power-Down	Asynchronous ZZ input reduces supply current to ≤50mA (IZZ) while retaining data
Operating Temperature	Commercial grade: 0°C to +70°C - validated for non-extended ambient environments

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pin 1 marked by corner notch; top-side marking includes "71V67603S166BQG8" and date code.

Pin/Terminal	Circuit Role	Design Meaning
A0–A18	Address Inputs	Synchronous address latching on rising CLK edge when ADSP or ADSC is asserted; A0–A17 used for 256K×36 mode
CLK	System Clock Input	Primary timing reference; all synchronous inputs sampled on rising edge; tCH/tCL ≥2.4ns min
CE, CS0, CS1	Chip Enable / Selects	Three-input decode: active when CE=L, CS0=H, CS1=L - enables multi-bank addressing without external logic
GW, BWE, BW1–BW4	Write Control Inputs	GW overrides BWE/BWx; BWE gates BWx; BW1 controls I/O0–7+I/OP1, etc. - enables precise 9-bit byte writes
ADV, ADSP, ADSC	Burst Address Control	ADSP/ADSC load initial address; ADV advances internal counter - enables cache-line burst without CPU intervention
LBO	Burst Order Select	Static input: LBO=L → linear (00→01→10→11), LBO=H → interleaved (00→01→11→10) - must be stable during operation
ZZ	Asynchronous Sleep Mode	High-Z I/O and reduced current (≤50mA) when ZZ=H; no clock required for entry/exit; retains memory contents
I/O0–I/O31, I/OP1–I/OP4	Data I/O (36-bit)	Synchronous bidirectional bus; registered input/output paths; 3.3V-tolerant I/O with VOH≥2.4V, VOL≤0.4V

Key Features

Feature	Design Value
Pipelined Outputs	First output word available one CLK cycle after address assertion; eliminates wait states in burst-read pipelines
Single-Cycle Deselect	Outputs enter high-impedance state within one CLK cycle of chip disable - prevents bus contention in multi-SRAM systems
Self-Timed Write Cycle	Internal timing generator eliminates external write-pulse generation; supports variable-length cycles based on GW/BWx setup
Linear/Interleaved Burst Selection	LBO pin configures burst address sequence to match CPU/cache controller expectations without firmware change
3.3V Core + I/O Supplies	Dual-rail design allows independent noise isolation between core logic and I/O drivers; meets PCI-X and RISC processor interface requirements

Applications

Networking Packet Buffer	Industrial PLC Data Cache
Use Scenario: Storing ingress/egress packet headers and metadata in 10G Ethernet line cards with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly to MAC-layer logic via synchronous burst reads/writes. Use Value: 166MHz operation delivers 595MB/s sustained throughput; pipelined outputs reduce read turnaround to one clock cycle.	Use Scenario: Real-time data logging and program execution cache in programmable logic controllers operating in factory-floor environments. IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for ladder logic execution engine and I/O status shadow registers. Use Value: Single-cycle deselect prevents bus conflicts during rapid task switching; ZZ sleep mode cuts idle power by >85%.
Telecom Baseband Processing	Test Equipment Pattern Memory
Use Scenario: Frame buffering in LTE/5G baseband units where burst-aligned data transfer minimizes DMA overhead. IC Role / Device Role / Timing Role: Synchronous SRAM acting as ping-pong buffer between FFT engines and channel encoders. Use Value: Configurable burst order (LBO) matches DSP memory access patterns; 3.3V I/O ensures compatibility with FPGA transceivers.	Use Scenario: Storing stimulus/response vectors in automated test equipment requiring precise timing alignment and repeatability. IC Role / Device Role / Timing Role: Timing-critical pattern store synchronized to system clock with zero-jitter output registration. Use Value: Guaranteed tCD ≤3.5ns and tOHZ ≤3.5ns ensure sub-nanosecond timing margin for 166MHz pattern rates.

Networking Packet Buffer

Industrial PLC Data Cache

Use Scenario: Storing ingress/egress packet headers and metadata in 10G Ethernet line cards with strict latency budgets.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer interfacing directly to MAC-layer logic via synchronous burst reads/writes.

Use Value: 166MHz operation delivers 595MB/s sustained throughput; pipelined outputs reduce read turnaround to one clock cycle.

Use Scenario: Real-time data logging and program execution cache in programmable logic controllers operating in factory-floor environments.

IC Role / Device Role / Timing Role: Deterministic-access scratchpad memory for ladder logic execution engine and I/O status shadow registers.

Use Value: Single-cycle deselect prevents bus conflicts during rapid task switching; ZZ sleep mode cuts idle power by >85%.

Telecom Baseband Processing

Test Equipment Pattern Memory

Use Scenario: Frame buffering in LTE/5G baseband units where burst-aligned data transfer minimizes DMA overhead.

IC Role / Device Role / Timing Role: Synchronous SRAM acting as ping-pong buffer between FFT engines and channel encoders.

Use Value: Configurable burst order (LBO) matches DSP memory access patterns; 3.3V I/O ensures compatibility with FPGA transceivers.

Use Scenario: Storing stimulus/response vectors in automated test equipment requiring precise timing alignment and repeatability.

IC Role / Device Role / Timing Role: Timing-critical pattern store synchronized to system clock with zero-jitter output registration.

Use Value: Guaranteed tCD ≤3.5ns and tOHZ ≤3.5ns ensure sub-nanosecond timing margin for 166MHz pattern rates.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
CY7C1362BV18-166BZXI	512K × 18-bit organization; same 166MHz speed, but narrower 18-bit bus; uses different pinout and lacks LBO control	Requires PCB redesign for 18-bit data path; no burst-order flexibility - fixed linear only	Select when system bandwidth demand fits 18-bit interface and burst control is not required.
AS7C33128PFS-166BIN	32M-bit density (1M × 32), 166MHz, but asynchronous OE and no pipelined outputs; higher latency (tAA = 5.5ns)	Cannot replace in burst-intensive designs; unsuitable for cache-like zero-wait-state operation	Consider only for cost-sensitive, non-burst applications where deterministic pipelining is unnecessary.

Compared with CY7C1362BV18-166BZXI and AS7C33128PFS-166BIN, the 71V67603S166BQG8 uniquely delivers 256K × 36-bit width with configurable burst order and true pipelined output timing - critical for high-efficiency cache and packet-processing subsystems.

Availability

71V67603S166BQG8 is available at Aetrix Electronics and suitable for networking packet buffers, industrial PLC data caches, telecom baseband processing, and test equipment pattern memory requiring stable component supply and long-term obsolescence planning.

Supply support for 71V67603S166BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.

The 71V67603S166BQG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-oriented memory subsystems in network infrastructure and real-time control applications.

FAQ

What is the maximum supported clock frequency for the 71V67603S166BQG8?

The 71V67603S166BQG8 is rated for 166MHz operation with guaranteed 3.5ns clock-to-data (tCD) timing. This corresponds to a minimum clock cycle time (tCYC) of 6ns. Operation at 166MHz is validated across the commercial temperature range (0°C to +70°C) and requires VDD/VDDQ = 3.3V ±5%. Exceeding this frequency violates AC timing specifications and may cause data corruption.

Does the 71V67603S166BQG8 support both linear and interleaved burst modes?

Yes, the 71V67603S166BQG8 supports both linear and interleaved 4-word burst sequences via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the device executes linear bursts (00→01→10→11); when LBO is HIGH, it executes interleaved bursts (00→01→11→10). LBO is a static input and must remain stable during device operation.

How does the ZZ pin function in the 71V67603S166BQG8?

The ZZ pin on the 71V67603S166BQG8 provides asynchronous entry into full sleep mode. When ZZ is driven HIGH, the device gates its internal clock, disables outputs (high-Z), and reduces supply current to ≤50mA (IZZ) while retaining all stored data. Recovery occurs synchronously on the next rising CLK edge after ZZ returns LOW, with tZZR ≤100ns.

What package type is used for the 71V67603S166BQG8?

The 71V67603S166BQG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP) with 14mm × 20mm body size and 0.5mm lead pitch. The suffix "BQG8" explicitly denotes this TQFP-100 package variant. Pin 1 is identified by a corner notch, and the top marking includes "71V67603S166BQG8" followed by date code.

Can the 71V67603S166BQG8 operate with separate VDD and VDDQ supplies?

Yes, the 71V67603S166BQG8 requires two independent 3.3V supplies: VDD (core logic, pins 11, 22, 36, 45, 54, 63, 72, 81, 90) and VDDQ (I/O drivers, pins 47, 56, 65, 74, 83, 92). Both must be regulated to 3.3V ±5%. Separating these rails allows independent decoupling and noise isolation - essential for maintaining signal integrity on the 36-bit I/O bus.

71V67603S166BQG8 Specifications

Product attributes: Attribute value

Manufacturer:: Renesas

Series:: -

Package/Case:: 165-TBGA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Programmable:: Not Verified

Memory Type:: Volatile

Memory Format:: SRAM

Technology:: SRAM - Synchronous, SDR

Memory Size:: 9Mbit

Memory Organization:: 256K x 36

Memory Interface:: Parallel

Clock Frequency:: 166 MHz

Write Cycle Time - Word, Page:: -

Access Time:: 3.5 ns

Voltage - Supply:: 3.135V ~ 3.465V

Operating Temperature:: 0°C ~ 70°C (TA)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: 165-CABGA (13x15)

71V67603S166BQG8 FAQ

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Please submit a Request for Quotation (RFQ) for 71V67603S166BQG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of 71V67603S166BQG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S166BQG8 is usually 5 days.

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For technical support, including 71V67603S166BQG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67603S166BQG8 requirements.

6.How does Aetrix verify that 71V67603S166BQG8 is sourced from the original manufacturer or authorized distributors?

All 71V67603S166BQG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S166BQG8 meets industry standards.

7.What is the process for return or replacement of 71V67603S166BQG8?

All 71V67603S166BQG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S166BQG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67603S166BQG8 part is unused and in its original packaging.

Return procedure for 71V67603S166BQG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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