Renesas 71V67603S166PFG
- Part No.:
- 71V67603S166PFG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V67603S166PFG.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:

- Shipping:

Inventory:1,509
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Product details
Overview
71V67603S166PFG from IDT (Integrated Device Technology) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 166MHz clock operation (3.5ns access time). It supports interleaved/linear burst modes via LBO input, features self-timed write with global/byte write controls, and operates across commercial temperature range (0°C to +70°C). It serves as high-speed cache or buffer memory in network packet processors and telecom line cards.
For engineers reviewing the 71V67603S166PFG datasheet, 71V67603S166PFG pinout, 71V67603S166PFG application, or 71V67603S166PFG equivalent, key selection criteria include burst-mode timing compliance, ZZ-controlled sleep current (50mA), TQFP-100 package compatibility, and 3.3V I/O voltage tolerance - all critical for low-latency embedded memory subsystems.
Technical Context
The 71V67603S166PFG implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter generates four consecutive addresses per ADV assertion, with output pipelining delivering first valid data one clock cycle after CLK rising edge.
Burst order is determined by static LBO pin state (LOW = linear, HIGH = interleaved), and write operations are controlled synchronously via GW, BWE, and BW1–BW4 signals. Power management includes asynchronous ZZ input enabling full-sleep mode with 50mA supply current at VDD = 3.465V.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit configuration via address mapping |
| Clock Frequency | 166MHz max - enables 6ns clock cycle time for high-throughput burst reads/writes |
| Access Time | 3.5ns (tCD) - defines minimum latency from CLK rising edge to valid output data |
| Supply Voltages | VDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O) - requires separate low-noise 3.3V rails |
| Operating Temperature | 0°C to +70°C - qualified for commercial-grade systems without extended thermal margin |
| Power Consumption | IDD = 340mA max at 166MHz; IZZ = 50mA in full sleep mode - enables dynamic power scaling |
| Burst Mode | Linear or interleaved 4-word burst via LBO pin - determines address sequence for cache-line fills |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead-free and RoHS-compliant.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Input | Synchronous address latch triggered by ADSP/ADSC falling edge and CE active; A0–A17 used for 256K×36 mode |
| CLK | Clock Input | Primary timing reference; all synchronous operations aligned to rising edge |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates byte writes; BW1–BW4 select 9-bit byte lanes (I/O0–7/I/OP1, etc.) |
| ADV, ADSP, ADSC | Burst & Address Status | ADV advances internal burst counter; ADSP (processor) and ADSC (cache) load address register on falling edge |
| OE | Output Enable | Asynchronous control: LOW enables I/O drivers; HIGH forces high-impedance output state |
| ZZ | Sleep Mode Input | Asynchronous HIGH disables internal clock and reduces current to 50mA - no sequencing required |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; registered input/output paths synchronized to CLK rising edge |
| LBO | Burst Order Select | Static input: LOW selects linear burst (00→01→10→11), HIGH selects interleaved (00→01→11→10) |
Key Features
| Feature | Design Value |
|---|---|
| Pipelined Outputs | First burst word appears on next CLK rising edge - eliminates pipeline stalls in high-clock-rate systems |
| Single-Cycle Deselect | Chip deactivation completes within one clock cycle - enables rapid context switching between memory banks |
| Self-Timed Write Cycle | Internal write timing resolves before end of cycle - removes external write-pulse width constraints |
| Byte-Write Granularity | Four independent 9-bit write lanes allow partial-word updates without read-modify-write overhead |
| Low-Power Sleep Mode | 50mA IZZ at VDD = 3.465V - supports energy-efficient idle states in always-on networking hardware |
Applications
| Network Packet Buffering | Telecom Line Card Cache |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in multi-gigabit Ethernet switches. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM acting as first-level packet buffer with burst-aligned DMA transfers. Use Value: 166MHz clock and 3.5ns tCD enable sub-6ns per-word throughput - matching 10Gbps+ line rates with zero wait states. |
Use Scenario: Caching protocol translation tables and signaling message buffers in SONET/SDH add-drop multiplexers. IC Role / Device Role / Timing Role: Synchronous burst-memory interface to FPGA-based framer logic with deterministic access timing. Use Value: Linear burst mode (LBO = LOW) delivers contiguous 4-word sequences matching ATM cell or HDLC frame alignment. |
| Industrial PLC Data Logging | Test Equipment Pattern Memory |
|
Use Scenario: Capturing real-time sensor timestamps and analog-to-digital conversion results in programmable logic controllers. IC Role / Device Role / Timing Role: Dual-port accessible memory bank supporting concurrent acquisition and host readout via burst reads. Use Value: Single-cycle deselect allows rapid arbitration between CPU and DMA engine - minimizing logging latency jitter. |
Use Scenario: Storing stimulus/response vectors in automated test equipment for semiconductor wafer probing. IC Role / Device Role / Timing Role: High-reliability, fast-access pattern store interfaced to high-speed digital I/O controllers. Use Value: ZZ sleep mode reduces standby power to 50mA - critical for portable ATE units with battery backup requirements. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1362BV33-166BAXI | 256K × 36-bit, 166MHz, but uses 165-ball fBGA only - no TQFP option; higher I/O capacitance (7pF vs 5pF) | Requires PCB redesign for BGA layout; better suited for space-constrained, high-density designs | Select when board area is constrained and BGA assembly capability exists; avoid if TQFP rework or thermal testing is required. |
| AS7C3256B-166JCIN | 256K × 36-bit, 166MHz, but lacks ADV/ADSP/ADSC burst-control interface - only supports simple asynchronous burst | Cannot emulate cache-controller handshake protocols; limited to basic processor-bus interfacing | Choose only for cost-sensitive, non-cache applications where burst control logic resides externally. |
Compared with CY7C1362BV33-166BAXI and AS7C3256B-166JCIN, the 71V67603S166PFG uniquely supports both processor- and cache-controller address status handshaking (ADSP/ADSC) and offers TQFP-100 packaging - simplifying thermal validation and field repair in telecom infrastructure.
Availability
71V67603S166PFG is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, and industrial PLC data logging requiring stable component supply and long-term obsolescence management.
Supply support for 71V67603S166PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology) is a fabless semiconductor company specializing in high-performance timing, memory, and RF solutions, acquired by Renesas Electronics in 2019.
The 71V67603S166PFG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-oriented memory subsystems in networking, telecommunications, and test equipment.
FAQ
What is the maximum clock frequency supported by the 71V67603S166PFG?
The 71V67603S166PFG supports a maximum clock frequency of 166MHz, corresponding to a 6ns clock cycle time and 3.5ns clock-to-data (tCD) access time. This rating is guaranteed over the commercial temperature range (0°C to +70°C) with VDD and VDDQ at 3.3V ±5%. Operation beyond 166MHz is not characterized or supported.
Does the 71V67603S166PFG support both linear and interleaved burst modes?
Yes, the 71V67603S166PFG supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear addressing (00→01→10→11), while LBO = HIGH selects interleaved (00→01→11→10). The LBO pin is static and must remain stable during device operation to prevent burst sequence corruption.
How does the ZZ pin affect power consumption in the 71V67603S166PFG?
When ZZ is driven HIGH, the 71V67603S166PFG enters full sleep mode, gating the internal clock and reducing supply current to 50mA (IZZ) at VDD = 3.465V. This state retains data and requires no power-supply sequencing. Recovery time (tZZR) is 100ns minimum after ZZ returns LOW.
What is the function of the ADV, ADSP, and ADSC pins on the 71V67603S166PFG?
ADV advances the internal burst counter for sequential address generation. ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) are synchronous inputs that load the address register on their falling edges - enabling precise handshake timing with external controllers. ADSP is gated by CE; ADSC is independent.
Can the 71V67603S166PFG operate in 512K × 18-bit configuration?
Yes, the 71V67603S166PFG supports 512K × 18-bit organization through address remapping: A18 becomes MSB, and data width reduces to 18 bits (I/O0–I/O17 plus I/OP1–I/OP2). Pin configurations differ between 256K×36 and 512K×18 modes - refer to PKG100 pinout diagrams in the datasheet for signal assignments.
71V67603S166PFG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 166 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 3.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V67603S166PFG FAQ
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Please submit a Request for Quotation (RFQ) for 71V67603S166PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of 71V67603S166PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67603S166PFG is usually 5 days.
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6.How does Aetrix verify that 71V67603S166PFG is sourced from the original manufacturer or authorized distributors?
All 71V67603S166PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67603S166PFG meets industry standards.
7.What is the process for return or replacement of 71V67603S166PFG?
All 71V67603S166PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67603S166PFG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67603S166PFG part is unused and in its original packaging.
Return procedure for 71V67603S166PFG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67603S166PFG Tags

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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology

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AT21CS01-STUM10-T
Microchip Technology

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AT24C02C-SSHM-T
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics

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AT24CS02-SSHM-T
Microchip Technology

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93LC46BT-I/OT
Microchip Technology

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AT24C04C-SSHM-T
Microchip Technology

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24LC01BT-I/SN
Microchip Technology

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24AA02UIDT-I/OT
Microchip Technology

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AT24C08C-STUM-T
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