Renesas 71V67603S166PFG8

Overview

71V67603S166PFG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with pipelined outputs, single-cycle deselect, and 166MHz operation (3.5ns clock access time). It supports interleaved/linear burst modes via LBO input, features self-timed write with global/byte write control, and operates across commercial temperature range (0°C to +70°C). Used in high-speed networking line cards requiring low-latency, burst-capable memory buffering.

For engineers reviewing the 71V67603S166PFG8 datasheet, 71V67603S166PFG8 pinout, 71V67603S166PFG8 application, or 71V67603S166PFG8 equivalent, key selection criteria include burst address counter behavior, ZZ-controlled sleep mode power-down (IZZ = 50mA), pipelined read timing (tCD = 3.5ns), and TQFP-100 package compatibility with JEDEC-standard layout.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, data, and control inputs. Its internal burst counter advances on ADV=LOW and selects linear or interleaved sequences based on static LBO state-no runtime reconfiguration. The pipelined output register delivers first data one clock cycle after address latch, enabling continuous burst reads at full frequency.

Write operations are self-timed: GW or BWE/BWx assertion initiates an internal write sequence that completes without external timing constraints. Power management includes asynchronous ZZ input for full-sleep mode (IZZ ≤ 50mA) and CMOS standby (ISB1 = 50mA), both validated over 0°C–70°C.

Key Specifications

Pinout & Package

71V67603S166PFG8 is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V67603", date code, and manufacturer logo.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1362BV18 and AS7C362000PFSIG, the 71V67603S166PFG8 uniquely delivers 36-bit width with parity, 166MHz speed, and selectable burst order-making it optimal for new 36-bit packet buffer and cache tag designs demanding maximum throughput and architectural flexibility.

Availability

71V67603S166PFG8 is available at Aetrix Electronics and suitable for high-speed networking equipment, telecom line cards, and embedded processor cache subsystems requiring stable component supply, long-term lifecycle support, and JEDEC-compliant TQFP packaging.

Supply support for 71V67603S166PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, specializes in high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.

The 71V67603S166PFG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for burst-oriented applications in networking infrastructure, where deterministic latency, low-power sleep, and JEDEC-standard packaging are critical.

FAQ

What is the maximum operating frequency and corresponding access time for the 71V67603S166PFG8?

The 71V67603S166PFG8 operates at up to 166MHz with a guaranteed clock-to-data access time (tCD) of 3.5ns under commercial conditions. This performance is achieved using pipelined output registers and is validated across the full 0°C to +70°C temperature range with 3.3V ±5% supplies. The device also supports 150MHz (3.8ns) and 133MHz (4.2ns) configurations for design margining.

How does the LBO pin affect burst addressing behavior in the 71V67603S166PFG8?

The LBO (Linear Burst Order) pin statically configures the internal burst counter sequence: when pulled LOW, it selects linear burst (00→01→10→11); when HIGH, it selects interleaved burst (00→01→11→10). This setting must be stable during operation and is sampled at power-up. The 71V67603S166PFG8 uses A0/A1 to generate the four burst addresses, making LBO essential for matching cache line ordering in x86 or ARM systems.

Can the 71V67603S166PFG8 operate with different memory organizations, and how is this configured?

Yes-the 71V67603S166PFG8 supports both 256K×36 and 512K×18 configurations. The organization is determined by pin strapping: in 256K×36 mode, A18 is unused and BW3/BW4 are active; in 512K×18 mode, A18 becomes an address input and BW3/BW4 are NC. Pin configuration tables in the datasheet define exact pin states for each mode, and no external logic is required for mode selection.

What power-saving features does the 71V67603S166PFG8 offer, and how are they controlled?

The 71V67603S166PFG8 offers two power-saving states: CMOS standby (ISB1 = 50mA) activated by chip deselect (CE/CS0/CS1 inactive), and full sleep mode (IZZ = 50mA) activated by asserting ZZ HIGH. ZZ is asynchronous and requires no clock synchronization. Both modes retain data; sleep mode additionally gates the internal clock to minimize dynamic power. VDD and VDDQ supplies remain active in both states.

Is the 71V67603S166PFG8 pin-compatible with other devices in the IDT 71V67xx family, such as the 71V67803?

No-the 71V67603S166PFG8 is not pin-compatible with the 71V67803. While both share the same TQFP-100 package footprint, their pin functions differ significantly: the 71V67803 omits BW3/BW4 and repurposes those pins as NC or address lines (A15/A16), and its burst control logic differs. Direct replacement requires PCB redesign. Always verify pin mapping against the specific device's configuration diagram before substitution.