My Inquiry
My Account
Renesas 71V67703S75BG
- Part No.:
- 71V67703S75BG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67703S75BG.pdf
- Description:
- IC SRAM 9MBIT PAR 117MHZ 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,952
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V67703S75BG from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, 7.5ns access time, and burst-mode operation supporting up to 117MHz clock frequency. It features global and byte-level write control, linear/interleaved burst ordering via LBO, and industrial-grade temperature support (–40°C to +85°C). Used in high-speed networking buffers and cache subsystems requiring deterministic timing.
For engineers reviewing the 71V67703S75BG datasheet, 71V67703S75BG pinout, 71V67703S75BG application, or 71V67703S75BG equivalent, key selection criteria include burst address sequencing behavior, single-cycle deselect capability, ZZ-controlled sleep mode power management, and compatibility with 3.3V I/O interfaces in TQFP-100 packaging.
Technical Context
The 71V67703S75BG implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs - enabling zero-latency read output after tCD. Its internal burst counter advances on ADV assertion and selects sequence order (linear or interleaved) based on static LBO state.
Write operations are self-timed and support four modes: global write (GW), byte write enable (BWE) with BW1–BW4, and combinations thereof. Chip select logic uses CE, CS0 (active-HIGH), and CS1 (active-LOW) for hierarchical enable control, while ADSP/ADSC provide processor- or cache-controller-initiated address latching.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-strapping - enables flexible data bus width mapping. |
| Access Time / Max Frequency | 7.5ns / 117MHz - guarantees sub-8ns read latency under commercial conditions, critical for real-time packet buffering. |
| Core & I/O Voltage | 3.3V ±5% VDD (core), 3.3V ±5% VDDQ (I/O) - ensures compatibility with standard 3.3V logic families and eliminates level-shifting. |
| Burst Mode | Four-word burst with programmable linear/interleaved order (LBO pin) - reduces address bus traffic and improves throughput in sequential access patterns. |
| Power Management | ZZ input enables full sleep mode (IZZ ≤ 70µA) - cuts active current by >90% during idle periods without data loss. |
| Operating Temperature | –40°C to +85°C industrial grade - validated for deployment in base station RF modules and industrial controllers. |
| Package | JEDEC-standard 100-pin TQFP (14mm × 20mm) - provides proven thermal/mechanical reliability and compatibility with standard SMT reflow profiles. |
Pinout & Package
71V67703S75BG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, with 0.5mm pitch. Pin 1 is located at top-left corner (marked by dot or beveled edge), and pin numbering proceeds counterclockwise.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latched on rising CLK edge when ADSP/ADSC asserted; A0–A17 used for 256K×36 mode. |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; no internal clock division. |
| CE, CS0, CS1 | Chip Enable/Select | Three-input hierarchical enable: CE (active-LOW), CS0 (active-HIGH), CS1 (active-LOW) - supports multi-chip memory banks. |
| GW, BWE, BW1–BW4 | Write Control | GW writes all 36 bits; BWE gates BWx; BW1–BW4 each control one 9-bit byte - enables precise partial-word updates. |
| ADV, ADSP, ADSC, LBO | Burst & Address Control | ADV advances burst counter; ADSP/ADSC load address register; LBO selects linear/interleaved sequence - defines burst behavior per access. |
| OE | Output Enable | Asynchronous; drives I/O pins to high-Z when HIGH - allows bus sharing without clock-domain constraints. |
| ZZ | Sleep Mode Input | Asynchronous HIGH activates full sleep mode; internal clock gating and leakage reduction - enables rapid low-power entry/exit. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; flow-through output path (no output register); synchronous input path - minimizes read-to-output delay. |
| VDD, VDDQ, VSS | Power/Ground | VDD = 3.3V core supply; VDDQ = 3.3V I/O supply; separate VDD/VDDQ allows independent noise isolation and decoupling. |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - delivers valid data within 7.5ns of CLK rise, enabling tight timing closure in high-speed interfaces. |
| Single-cycle deselect | Device enters high-Z state within one clock cycle after chip disable - prevents bus contention during dynamic memory bank switching. |
| Self-timed write cycle | Internal timing logic completes write without external wait-state generation - simplifies controller design and improves effective bandwidth. |
| Linear/interleaved burst ordering | LBO pin statically configures burst address sequence - matches CPU cache line layouts (e.g., linear for x86, interleaved for PowerPC). |
| Industrial temperature range | Validated operation from –40°C to +85°C - supports deployment in outdoor telecom equipment and factory automation systems. |
| Green packaging | Lead-free, RoHS-compliant TQFP package - meets environmental compliance requirements for global electronics manufacturing. |
Applications
| Networking Packet Buffer | Baseband Processor Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to MAC controller and switch fabric. Use Value: 7.5ns access + flow-through output enables line-rate 10Gbps frame buffering with zero-cycle read turnaround. | Use Scenario: Serving as L2 cache for multicore baseband processors in 4G/LTE femtocells. IC Role / Device Role / Timing Role: Burst-accessed cache memory synchronized to processor clock domain with deterministic tCD. Use Value: Linear burst mode aligns with 128-bit cache line fetches, reducing address bus cycles by 75% vs. random access. |
| Industrial PLC Data Log | Radar Signal Processing FIFO |
Use Scenario: Capturing sensor timestamps and analog measurements in deterministic industrial controllers. IC Role / Device Role / Timing Role: Dual-port accessible SRAM used as circular buffer for time-critical event logging. Use Value: ZZ sleep mode reduces standby power to <70µA - extends battery life in remote, unpowered field nodes. | Use Scenario: Holding digitized IF samples between ADC and FFT engine in phased-array radar front ends. IC Role / Device Role / Timing Role: Synchronous FIFO buffer with burst reads matching FFT word-width (36-bit complex samples). Use Value: Single-cycle deselect allows seamless handoff between acquisition and processing phases without bus arbitration overhead. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV25-7BBXC | 256K × 36, 3.3V, 7ns access, 100-pin TQFP - identical organization and speed grade but Cypress (Infineon) silicon; no LBO pin - fixed linear burst only. | Requires redesign of burst control logic if interleaved mode is needed; otherwise drop-in for linear-burst systems. | Select when LBO functionality is unused and long-term Infineon supply chain alignment is preferred. |
| AS7C3256B-7TIN | 256K × 36, 3.3V, 7ns access, 100-pin TQFP - Alliance Memory part; lacks ADSC/ADSP dual-address-status inputs and ZZ sleep mode. | Cannot interface directly with cache-coherent systems requiring ADSC; no low-power sleep - unsuitable for battery-backed or thermally constrained designs. | Select only for cost-sensitive, non-cache, always-on applications where power and advanced control are not required. |
Compared with CY7C1371BV25-7BBXC and AS7C3256B-7TIN, the 71V67703S75BG uniquely combines programmable burst ordering (LBO), dual-address-status support (ADSP/ADSC), and hardware sleep mode (ZZ) - making it the only option among the three for cache-coherent, power-aware, and architecture-flexible SRAM deployments.
Availability
71V67703S75BG is available at Aetrix Electronics and suitable for high-speed networking equipment, industrial PLCs, and radar signal processing systems requiring stable component supply across extended product lifecycles.
Supply support for 71V67703S75BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.
The 71V67703S75BG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for deterministic, low-latency data buffering in network processors, baseband ICs, and real-time control systems.
FAQ
What is the maximum operating frequency supported by the 71V67703S75BG?
The 71V67703S75BG supports up to 117MHz clock frequency at its 7.5ns access time rating. This is guaranteed over the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions. The device also offers 8.0ns/100MHz and 8.5ns/87MHz speed grades for lower-power or cost-optimized implementations.
Does the 71V67703S75BG support both linear and interleaved burst modes?
Yes, the 71V67703S75BG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is LOW, linear addressing is used; when HIGH, interleaved addressing is selected. This configuration is static and must remain stable during operation - it cannot be changed mid-burst.
How does the 71V67703S75BG handle power-down and sleep states?
When the ZZ pin is driven HIGH, the 71V67703S75BG enters full sleep mode, reducing supply current to ≤70µA while retaining data. Clock is internally gated, and all outputs go high-Z. Recovery time (tZZR) is 100ns. The device requires deselection (CE/CS0/CS1 inactive) before exiting sleep mode to ensure proper initialization.
What is the function of the ADSP and ADSC pins on the 71V67703S75BG?
ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) are synchronous, active-LOW inputs that trigger loading of the internal address register on the next rising CLK edge. ADSP is gated by CE; ADSC is independent. They enable dual-source address latching - essential for cache-coherent systems where processor and cache controller may drive addresses asynchronously.
Can the 71V67703S75BG be used in a 512K × 18-bit configuration?
Yes, the 71V67703S75BG supports 512K × 18-bit organization via pin-strapping - achieved by using A18 as an MSB and configuring data bus width accordingly. In this mode, BW3 and BW4 are not functional (per datasheet note), and the device operates as two independent 18-bit words per address. Pin configurations differ slightly from 256K×36 mode, as shown in PKG100 diagrams.
71V67703S75BG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67703S75BG FAQ
1.How can I place an order for 71V67703S75BG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S75BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S75BG reliable?
The price and inventory of 71V67703S75BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S75BG is usually 5 days.
3.What payment methods are accepted for 71V67703S75BG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S75BG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V67703S75BG?
71V67703S75BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S75BG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S75BG?
For technical support, including 71V67703S75BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S75BG requirements.
6.How does Aetrix verify that 71V67703S75BG is sourced from the original manufacturer or authorized distributors?
All 71V67703S75BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S75BG meets industry standards.
7.What is the process for return or replacement of 71V67703S75BG?
All 71V67703S75BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S75BG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S75BG part is unused and in its original packaging.
Return procedure for 71V67703S75BG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S75BG Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
