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Renesas 71V67703S75BG8
- Part No.:
- 71V67703S75BG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67703S75BG8.pdf
- Description:
- IC SRAM 9MBIT PAR 117MHZ 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,038
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Product details
Overview
71V67703S75BG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, 7.5ns access time, 117MHz clock support, and JEDEC-standard 119-ball BGA (BG119) packaging. It implements burst addressing via ADV/LBO control, self-timed write with global/byte write enables, and low-power sleep mode via ZZ input - deployed in high-speed networking packet buffers and telecom line-card memory subsystems.
For engineers reviewing the 71V67703S75BG8 datasheet, 71V67703S75BG8 pinout, 71V67703S75BG8 application, or 71V67703S75BG8 equivalent, key selection criteria include burst mode timing compliance (linear vs. interleaved), single-cycle deselect capability, flow-through output latency, 3.3V I/O voltage tolerance, and industrial-grade temperature operation up to +85°C.
Technical Context
The 71V67703S75BG8 uses a synchronous CMOS architecture with registered address/data inputs and unregistered (flow-through) outputs, enabling zero-cycle output latency after clock edge. Its internal burst counter advances on ADV=LOW and selects sequence order via LBO static configuration - supporting four-word bursts per address with wraparound behavior.
Write operations are controlled synchronously via GW (global write), BWE (byte write enable), and BW1–BW4 (individual byte write selects), allowing full- or partial-word writes without external gating logic. Power management includes asynchronous ZZ-driven sleep mode with guaranteed data retention and sub-70mA ISB1 standby current.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit total); supports 512K × 18-bit via pin-compatible variant but not this exact part number. |
| Access Time / Clock Frequency | 7.5ns access time at up to 117MHz clock frequency - defines maximum sustained read throughput in burst mode. |
| Supply Voltages | 3.3V ±5% core (VDD) and 3.3V ±5% I/O (VDDQ); separate supplies enable noise isolation between logic and data paths. |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence; ADV pin advances counter synchronously on LOW. |
| Power-Down Mode | Asynchronous ZZ input enables full sleep mode with ≤70mA supply current and guaranteed data retention. |
| Operating Temperature | Commercial grade: 0°C to +70°C - confirmed by datasheet table 04 for this speed grade (S75). |
| Package | JEDEC-standard 119-ball BGA (BG119), 12mm × 12mm footprint - verified in pin configuration drawing 5309 drw 02d. |
Pinout & Package
71V67703S75BG8 is packaged in a 119-ball fine-pitch BGA (BG119) per JEDEC MO-245, with 1.0mm ball pitch and 12mm × 12mm body size. Pin functions follow synchronous SRAM protocol with dual chip-select (CS0/CS1), address status inputs (ADSP/ADSC), and dedicated burst control (ADV, LBO).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADSP or ADSC is active LOW. |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge - no internal clock division. |
| GW, BWE, BW1–BW4 | Write Control Inputs | Global write (GW) overrides byte enables; BWE gates BWx signals; BW1–BW4 each control one 9-bit data byte (I/O0–31 + I/OP1–4). |
| OE | Output Enable | Asynchronous control: LOW enables flow-through outputs; HIGH forces high-impedance state regardless of clock. |
| ZZ | Sleep Mode Input | Asynchronous HIGH disables internal clock and reduces IDD to ≤70mA while retaining memory contents. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus; input path registered, output path flow-through (no output register delay). |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - data appears on I/O pins within tCD (≤7.5ns) after CLK rise, critical for low-latency buffering. |
| Single-cycle deselect | Chip deactivation completes in one clock cycle - enables rapid context switching between memory banks in multi-processor systems. |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst sequences - matches cache line alignment requirements of specific CPU architectures. |
| Self-timed write cycle | Internal timing logic eliminates need for external write pulse generation - simplifies interface design and improves timing margin. |
| Separate VDD/VDDQ supplies | Isolates core logic noise from I/O drivers - maintains signal integrity in high-speed parallel bus environments. |
Applications
| Packet Buffer Memory | Telecom Line Card Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to MAC controllers and switch fabric ASICs. Use Value: 7.5ns access + flow-through output ensures frame header inspection and store-forward latency remains under 10ns per burst, meeting IEEE 802.3az energy-efficient Ethernet timing budgets. | Use Scenario: Holding real-time voice/video payload in TDM-over-IP gateways during jitter buffering and packetization. IC Role / Device Role / Timing Role: Synchronous burst-access memory aligned to DSP DMA channels for deterministic data transfer. Use Value: Linear burst mode (LBO=LOW) delivers four consecutive 36-bit words per address - matching 128-bit DSP bus width and eliminating address overhead in streaming applications. |
| Industrial PLC Data Logging | Radar Signal Processing FIFO |
Use Scenario: Capturing sensor telemetry at 10kHz sampling rate with timestamping and pre-processing in programmable logic controllers. IC Role / Device Role / Timing Role: Dual-port accessible memory bank used as circular buffer for time-series data acquisition. Use Value: Single-cycle deselect allows rapid arbitration between CPU and FPGA-based acquisition engine - preventing data loss during interrupt servicing. | Use Scenario: Temporary storage of digitized IF samples in phased-array radar receivers prior to FFT processing. IC Role / Device Role / Timing Role: High-speed burst-write memory synchronized to ADC sampling clock and burst-read memory feeding FFT engine. Use Value: Self-timed write with GW/BWE control enables reliable capture of 100+ MSPS sample streams without external write strobe generation logic. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV25-7BBXC | 256K × 36-bit, 7ns access, 144-ball FBGA; requires VDD=3.3V, VDDQ=2.5V - incompatible I/O voltage. | Designed for 2.5V I/O systems; not drop-in compatible with 3.3V VDDQ interface of 71V67703S75BG8. | Select only if redesigning I/O power delivery to support 2.5V VDDQ and verifying timing margins at 7ns. |
| AS7C3256B-7TIN | 256K × 32-bit, 7ns access, 100-pin TQFP; lacks ADV/LBO burst control and flow-through output architecture. | Targets general-purpose microcontroller interfaces; does not support burst-mode addressing or single-cycle deselect. | Use only in non-burst, non-real-time applications where pin count and package form factor are primary constraints. |
Compared with CY7C1371BV25-7BBXC and AS7C3256B-7TIN, the 71V67703S75BG8 uniquely combines 3.3V I/O compatibility, flow-through output latency, and hardware-configurable burst sequencing - making it irreplaceable in telecom packet buffering and radar preprocessing where deterministic timing and interface voltage alignment are mandatory.
Availability
71V67703S75BG8 is available at Aetrix Electronics and suitable for packet buffer memory, telecom line card cache, and industrial PLC data logging requiring stable component supply across extended production lifecycles.
Supply support for 71V67703S75BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for infrastructure and industrial markets.
The 71V67703S75BG8 belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable memory subsystems in networking equipment and real-time signal processing platforms.
FAQ
What is the maximum clock frequency supported by the 71V67703S75BG8?
The 71V67703S75BG8 supports up to 117MHz clock frequency when operating at its rated 7.5ns access time. This is validated under commercial temperature conditions (0°C to +70°C) with VDD and VDDQ at 3.3V ±5%. Exceeding this frequency violates tCYC minimum (8.5ns) and risks setup/hold timing violations on address and control inputs.
Does the 71V67703S75BG8 support both linear and interleaved burst modes?
Yes, the 71V67703S75BG8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO is driven LOW, linear addressing is selected; when HIGH, interleaved addressing is activated. The LBO pin is static and must remain stable during device operation to prevent burst counter corruption.
What is the function of the ZZ pin on the 71V67703S75BG8?
The ZZ pin on the 71V67703S75BG8 is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces supply current to ≤70mA (ISB1) while guaranteeing data retention. Recovery requires tZZR ≥100ns after ZZ returns LOW and the device must be deselected during wake-up.
How many address bits does the 71V67703S75BG8 require for 256K × 36 operation?
The 71V67703S75BG8 requires 18 address bits (A0–A17) for 256K × 36 operation. This is confirmed by the functional block diagram showing A0–A17/18 inputs and pin description tables listing A0–A17 as active address lines in 256K × 36 configuration (PKG100 and BG119 drawings).
Is the 71V67703S75BG8 pin-compatible with the 71V67903 series?
No, the 71V67703S75BG8 is not fully pin-compatible with the 71V67903 series. While both share the same BG119 package and core pinout, the 71V67903 omits BW3 and BW4 pins (noted in datasheet footnote 1, Table 01), and uses A18 instead of A17 in 512K × 18 mode - making direct substitution invalid without PCB layout revision.
71V67703S75BG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67703S75BG8 FAQ
1.How can I place an order for 71V67703S75BG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S75BG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S75BG8 reliable?
The price and inventory of 71V67703S75BG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S75BG8 is usually 5 days.
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Once your 71V67703S75BG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S75BG8?
For technical support, including 71V67703S75BG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S75BG8 requirements.
6.How does Aetrix verify that 71V67703S75BG8 is sourced from the original manufacturer or authorized distributors?
All 71V67703S75BG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S75BG8 meets industry standards.
7.What is the process for return or replacement of 71V67703S75BG8?
All 71V67703S75BG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S75BG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S75BG8 part is unused and in its original packaging.
Return procedure for 71V67703S75BG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S75BG8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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24LC01BT-I/OT
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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24LC01BT-I/SN
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AT24C08C-STUM-T
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