My Inquiry
My Account
Renesas 71V67703S75BGG
- Part No.:
- 71V67703S75BGG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67703S75BGG.pdf
- Description:
- IC SRAM 9MBIT PAR 117MHZ 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,903
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
71V67703S75BGG from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through output architecture, 7.5ns access time at up to 117MHz clock frequency, and JEDEC-standard 119-ball BGA (BGG119) package. It supports linear/interleaved burst modes via LBO pin, self-timed write with global/byte write controls, and industrial-grade operation (–40°C to +85°C).
For engineers reviewing the 71V67703S75BGG datasheet, 71V67703S75BGG pinout, 71V67703S75BGG application, or 71V67703S75BGG equivalent, key selection criteria include burst-mode timing compliance, 3.3V I/O voltage tolerance, single-cycle deselect capability, flow-through output latency, and ZZ-controlled sleep mode power management.
Technical Context
The 71V67703S75BGG implements a synchronous, clock-driven interface with registered address/data inputs and unregistered (flow-through) outputs-eliminating output register delay. Its internal burst counter advances on ADV=LOW and selects sequence order (linear vs. interleaved) via static LBO input.
Write operations are fully synchronous and support four granular control layers: global write (GW), byte write enable (BWE), individual byte write selects (BW1–BW4), and chip-level enables (CE, CS0, CS1). Power management includes asynchronous ZZ-triggered deep-sleep mode with guaranteed data retention.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-strapping on compatible variants |
| Access Time | 7.5ns maximum; enables reliable operation at 117MHz system clock |
| Supply Voltages | VDD = 3.3V ±5% (core); VDDQ = 3.3V ±5% (I/O); independent rail control |
| Burst Mode | Four-word burst per address; selectable linear or interleaved order via LBO pin |
| Output Architecture | Flow-through (no output register); data appears on I/O pins within tCD ≤ 7.5ns of CLK rise |
| Power-Down | Asynchronous ZZ input gates internal clock; ISB1 ≤ 70mA (industrial temp) |
| Operating Temperature | –40°C to +85°C (industrial grade); validated across full voltage and timing margins |
Pinout & Package
Packaged in JEDEC-standard 119-ball fine-pitch BGA (BGG119), 14mm × 20mm footprint, RoHS-compliant green variant available. Pinout matches BG119/BGG119 configuration for 256K × 36 organization.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | Synchronous 18-bit address bus; latched on rising CLK edge with ADSP/ADSC assertion |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs referenced to its rising edge |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE enables byte-select mode; BWx individually gate 9-bit data bytes |
| ADSP / ADSC | Address Status Inputs | ADSP (processor) and ADSC (cache controller) trigger address register load; both active-low and synchronous |
| LBO | Burst Order Select | Static DC input: LOW = linear burst, HIGH = interleaved burst; must remain stable during operation |
| ZZ | Asynchronous Sleep Enable | HIGH disables internal clock and reduces IDD to ≤70mA; no sequencing required |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data bus; flow-through outputs disable on OE HIGH or during writes |
| VDD, VDDQ, VSS | Power/Ground | Dual-supply design: VDD powers core logic, VDDQ powers I/O drivers; separate ground planes recommended |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD ≤ 7.5ns guarantees minimal read-to-data latency in high-speed bus interfaces |
| Single-cycle deselect | Chip deactivation completes within one CLK cycle-critical for multi-SRAM bus arbitration and low-latency memory sharing |
| Configurable burst addressing | LBO pin statically selects linear or interleaved 4-word burst sequence, enabling optimization for cache line or DMA transfer patterns |
| Multi-level write granularity | Supports full-word (GW), byte-group (BWE + BWx), or individual-byte (BWx-only) writes without external logic |
| Asynchronous sleep entry | ZZ HIGH immediately gates clock and cuts power; no handshake or timing constraints-ideal for dynamic power gating in embedded systems |
Applications
| High-Speed Networking Buffer | Industrial PLC Data Cache |
|---|---|
Use Scenario: Line-rate packet buffering in 10G Ethernet switch fabric ASICs requiring sub-10ns read access and burst-aligned data delivery. IC Role / Device Role / Timing Role: Primary burst-access SRAM serving as ingress/egress FIFO with flow-through outputs synchronized to system clock domain. Use Value: 7.5ns tCD and single-cycle deselect enable deterministic latency under full-load traffic, reducing jitter in time-sensitive forwarding paths. | Use Scenario: Real-time I/O data caching in programmable logic controllers operating in harsh factory environments (–40°C to +85°C). IC Role / Device Role / Timing Role: Non-volatile shadow RAM holding process variable snapshots, accessed synchronously by dual-core ARM Cortex-R processors. Use Value: ZZ-controlled sleep mode reduces standby current to ≤70mA while retaining data-extending uptime during brownout conditions. |
| Avionics Display Frame Buffer | Medical Imaging Pipeline Memory |
Use Scenario: High-reliability frame buffer for cockpit display units requiring radiation-tolerant timing and burst-mode pixel streaming. IC Role / Device Role / Timing Role: Synchronous SRAM interfacing directly to FPGA video controller; configured for linear burst to match raster scan order. Use Value: LBO-configurable burst order and 3.3V I/O compatibility simplify interface to 3.3V LVCMOS video processing logic without level shifters. | Use Scenario: Real-time DICOM image preprocessing pipeline where 36-bit wide pixel data must be buffered between FPGA-accelerated filters. IC Role / Device Role / Timing Role: Burst-capable SRAM acting as line buffer between convolution engine and DDR3 controller, minimizing external memory bandwidth. Use Value: 256K × 36 organization provides 1152KB capacity per device-sufficient for multi-line buffering of 16-bit medical images at 1080p resolution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-75BGXI | 256K × 36, 7.5ns, 3.3V, 119-ball BGA-but uses QDR-II architecture with separate read/write clocks and no LBO burst-order control | Requires dual-clock routing and lacks linear/interleaved burst flexibility; better suited for true dual-port read/write concurrency | Select only if QDR-II protocol compatibility and higher sustained bandwidth outweigh need for simple synchronous burst control |
| AS7C3256B-75BIN | 256K × 36, 7.5ns, 3.3V, but packaged in 100-pin TQFP-not BGA; no ZZ sleep mode; only supports linear burst | Lacks sleep mode and BGA footprint; limited to space-tolerant industrial boards with manual rework capability | Choose when BGA assembly is unavailable and thermal/power constraints permit higher ISB1 (100mA typical) |
Compared with CY7C1371BV33-75BGXI and AS7C3256B-75BIN, the 71V67703S75BGG uniquely combines BGA packaging, ZZ sleep, and LBO-configurable burst order-making it optimal for compact, power-aware, burst-flexible synchronous memory subsystems.
Availability
71V67703S75BGG is available at Aetrix Electronics and suitable for high-speed networking buffers, industrial PLC data caches, avionics display frame buffers, and medical imaging pipeline memory requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for 71V67703S75BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and analog solutions for communications, computing, and industrial markets.
The 71V67703S75BGG belongs to IDT's 71V67xxx family of flow-through synchronous SRAMs, designed specifically for low-latency, burst-capable memory subsystems in real-time embedded and infrastructure equipment.
FAQ
What memory organization does the 71V67703S75BGG support?
The 71V67703S75BGG is organized as 256K × 36 bits (9Mbit), with pin-compatible support for 512K × 18-bit configuration in related variants like 71V67903. Its address bus uses A0–A17 for 256K addressing, and the device implements internal decoding to map burst sequences across the full memory array without external logic.
How does the LBO pin affect burst behavior in the 71V67703S75BGG?
The LBO pin on the 71V67703S75BGG is a static DC input that selects burst order: LOW enables linear sequence (00→01→10→11), HIGH enables interleaved (00→01→11→10). It must remain stable during operation-changing LBO mid-burst causes undefined address sequencing. The 71V67703S75BGG datasheet defines both sequences in Tables 14 and 15 with explicit A1/A0 transitions.
Does the 71V67703S75BGG support true single-cycle deselect?
Yes-the 71V67703S75BGG guarantees single-cycle deselect: when CE, CS0, and CS1 transition to deselected states, the device enters high-impedance output mode within one CLK period. This is verified in the AC Electrical Characteristics table (tOHZ ≤ 3.5ns) and confirmed in the Synchronous Truth Table where HI-Z occurs on the same CLK edge as deselect assertion.
What is the role of the ZZ pin in the 71V67703S75BGG, and how does it interact with power states?
The ZZ pin on the 71V67703S75BGG is an asynchronous sleep enable: when driven HIGH, it gates the internal clock and reduces supply current to ≤70mA (industrial grade) while retaining memory contents. No setup/hold timing is required-entry is immediate. Recovery (tZZR = 100ns minimum) begins on ZZ LOW, and the device requires no reinitialization before resuming normal operation.
Can the 71V67703S75BGG operate with mixed voltage supplies-for example, 3.3V core and 2.5V I/O?
No-the 71V67703S75BGG requires VDD = VDDQ = 3.3V ±5%. The datasheet specifies VIH/VIL thresholds relative to VDD and VDDQ respectively, and DC characteristics (e.g., VOH/VOL) are characterized only at 3.3V I/O. Using 2.5V on VDDQ violates absolute maximum ratings and risks output drive failure or timing violation.
71V67703S75BGG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67703S75BGG FAQ
1.How can I place an order for 71V67703S75BGG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S75BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S75BGG reliable?
The price and inventory of 71V67703S75BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S75BGG is usually 5 days.
3.What payment methods are accepted for 71V67703S75BGG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S75BGG transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V67703S75BGG?
71V67703S75BGG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S75BGG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S75BGG?
For technical support, including 71V67703S75BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S75BGG requirements.
6.How does Aetrix verify that 71V67703S75BGG is sourced from the original manufacturer or authorized distributors?
All 71V67703S75BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S75BGG meets industry standards.
7.What is the process for return or replacement of 71V67703S75BGG?
All 71V67703S75BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S75BGG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S75BGG part is unused and in its original packaging.
Return procedure for 71V67703S75BGG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S75BGG Tags
-
M24C02-WMN6TP
STMicroelectronics
-
AT24C02C-XHM-T
Microchip Technology
-
AT21CS01-STUM10-T
Microchip Technology
-
AT24C02C-SSHM-T
Microchip Technology
-
24LC01BT-I/OT
Microchip Technology
-
M24C02-FMC6TG
STMicroelectronics
-
AT24CS02-SSHM-T
Microchip Technology
-
93LC46BT-I/OT
Microchip Technology
-
AT24C04C-SSHM-T
Microchip Technology
-
24LC01BT-I/SN
Microchip Technology
-
24AA02UIDT-I/OT
Microchip Technology
-
AT24C08C-STUM-T
Microchip Technology
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
