Renesas 71V67703S75BGG8

Overview

71V67703S75BGG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through output architecture, 7.5ns access time at up to 117MHz clock frequency, single-cycle deselect, and burst-mode operation. It supports linear/interleaved burst ordering via LBO pin and features self-timed write with global and byte-level write control - deployed in high-speed networking packet buffers and telecom line-card memory subsystems.

For engineers reviewing the 71V67703S75BGG8 datasheet, 71V67703S75BGG8 pinout, 71V67703S75BGG8 application, or 71V67703S75BGG8 equivalent, key selection criteria include its JEDEC-standard 119-ball BGA (BGG) package, industrial-temperature support (–40°C to +85°C), 3.3V core/I/O supply compatibility, and synchronous burst read/write timing compliance with IEEE 1149.1 boundary-scan test requirements.

Technical Context

The 71V67703S75BGG8 implements a synchronous, clock-driven interface with registered address/data inputs and flow-through (unregistered) outputs - enabling deterministic tCD = 7.5ns clock-to-data delay. Its internal burst counter advances on ADV=LOW transitions, generating four consecutive 36-bit words per address with order determined by LBO state (linear or interleaved).

Write operations are controlled synchronously via GW (global write), BWE (byte write enable), and BW1–BW4 (individual 9-bit byte selects), allowing partial writes without bus contention. Power management includes asynchronous ZZ input for full sleep mode (IZZ ≤ 70mA), with data retention guaranteed during low-power states.

Key Specifications

Pinout & Package

71V67703S75BGG8 is packaged in a 119-ball fine-pitch ball grid array (BGG119) per JEDEC MO-245, with 1.0mm ball pitch, 12mm × 12mm body size, and thermal pad exposed on underside for enhanced heat dissipation in high-density PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-7BBAXC and AS7C331636B-7TIN, the 71V67703S75BGG8 uniquely combines industrial temperature rating, configurable burst ordering (LBO), and sub-100mA sleep current - making it irreplaceable in telecom infrastructure and harsh-environment embedded systems.

Availability

71V67703S75BGG8 is available at Aetrix Electronics and suitable for networking packet buffers, telecom line-card memory, and industrial PLC data caches requiring stable component supply across extended product lifecycles.

Supply support for 71V67703S75BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, analog, and embedded processing solutions for communications, industrial, and automotive markets.

The 71V67703S75BGG8 belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-oriented memory subsystems in carrier-grade networking and real-time signal processing equipment.

FAQ

What is the maximum operating frequency supported by the 71V67703S75BGG8?

The 71V67703S75BGG8 supports up to 117MHz clock frequency, corresponding to a minimum clock cycle time (tCYC) of 8.5ns and 7.5ns access time. This frequency is guaranteed over the full industrial temperature range (–40°C to +85°C) with VDD and VDDQ at 3.3V ±5%. Operation beyond 117MHz violates AC timing specifications and may result in data corruption.

Does the 71V67703S75BGG8 support both linear and interleaved burst modes?

Yes, the 71V67703S75BGG8 supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, the device executes linear burst (00→01→10→11); when LBO = HIGH, it executes interleaved burst (00→01→11→10). LBO is a static input and must remain stable during burst operation to prevent address counter misalignment.

How does the 71V67703S75BGG8 handle partial writes to the 36-bit data bus?

The 71V67703S75BGG8 enables precise partial writes using BW1–BW4 (each controlling a 9-bit byte) combined with BWE. With BWE = LOW, any asserted BWx activates its corresponding byte lane; unasserted lanes retain prior data. Global write (GW = LOW) overrides all byte enables and writes all 36 bits simultaneously - ensuring atomic updates when required.

What is the function of the ZZ pin on the 71V67703S75BGG8?

The ZZ pin on the 71V67703S75BGG8 is an asynchronous active-HIGH sleep mode input. When asserted, it gates the internal clock and reduces supply current to ≤70mA (industrial grade) while guaranteeing data retention. ZZ recovery time (tZZR) is 100ns, and the device must be deselected (CE/CS0/CS1 inactive) before exiting sleep mode to ensure reliable reinitialization.

Is the 71V67703S75BGG8 compatible with 100-pin TQFP layouts?

No, the 71V67703S75BGG8 is exclusively packaged in a 119-ball fine-pitch BGA (BGG119) and is not pin-compatible with 100-pin TQFP variants such as the 71V67703S75PFGI. The BGG119 package has different ball map, thermal pad configuration, and solder-reflow profile - direct PCB substitution is not possible without layout revision.