Renesas 71V67703S75BGGI

Overview

71V67703S75BGGI from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through output architecture, 7.5ns access time at up to 117MHz clock frequency, and JEDEC-standard 119-ball BGA (BGG) package. It supports linear/interleaved burst modes via LBO pin, self-timed write with global/byte write controls, and industrial temperature operation (–40°C to +85°C), targeting high-bandwidth cache and buffer applications in networking and telecom systems.

For engineers reviewing the 71V67703S75BGGI datasheet, 71V67703S75BGGI pinout, 71V67703S75BGGI application, or 71V67703S75BGGI equivalent, key selection criteria include burst-mode timing compliance, 3.3V I/O voltage tolerance, single-cycle deselect capability, flow-through output latency, and ZZ-controlled sleep mode current (≤70mA).

Technical Context

The 71V67703S75BGGI implements a synchronous, clock-driven interface with registered address/data inputs and unregistered (flow-through) outputs-eliminating output register delay. Its internal burst counter advances on ADV=LOW and selects sequence order (linear vs. interleaved) via static LBO configuration.

Write operations are fully synchronous and support four distinct control paths: global write (GW), byte write enable (BWE), individual byte writes (BW1–BW4), and asynchronous OE/ZZ for output disable and power-down. All timing references are synchronized to CLK rising edge with strict setup/hold requirements.

Key Specifications

Pinout & Package

71V67703S75BGGI is packaged in a JEDEC-standard 119-ball fine-pitch BGA (BGG119), 12mm × 12mm body, 0.8mm ball pitch, with thermal pad exposed on underside. Pinout matches BG119/BGG119 footprint per IDT document 5309 drw 02c.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1373KV18 and AS7C3256B, the 71V67703S75BGGI uniquely delivers 256K × 36-bit synchronous operation with programmable burst order, flow-through latency, and industrial-grade power management-making it irreplaceable in high-performance, timing-critical embedded memory subsystems.

Availability

71V67703S75BGGI is available at Aetrix Electronics and suitable for high-speed network packet buffering, real-time DSP caching, and telecom baseband processing requiring stable component supply across extended product lifecycles.

Supply support for 71V67703S75BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, and memory solutions for automotive, industrial, and communications markets.

The 71V67703S75BGGI belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable memory subsystems in networking infrastructure and real-time embedded systems.

FAQ

What is the maximum operating frequency supported by the 71V67703S75BGGI?

The 71V67703S75BGGI supports up to 117MHz clock frequency, corresponding to a minimum clock cycle time (tCYC) of 8.5ns. This is guaranteed under both commercial (0°C to +70°C) and industrial (–40°C to +85°C) temperature ranges with VDD/VDDQ = 3.3V ±5%. The 7.5ns access time (tCD) is measured from CLK rise to valid output data under these conditions.

Does the 71V67703S75BGGI support both linear and interleaved burst modes?

Yes, the 71V67703S75BGGI supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, the device executes linear burst addressing (A0/A1 increment sequentially). When LBO = HIGH, it performs interleaved burst addressing. LBO is a static input and must remain stable during operation-changing it mid-burst may cause undefined behavior.

How does the flow-through output architecture of the 71V67703S75BGGI improve system timing?

The 71V67703S75BGGI's flow-through output architecture eliminates the output register delay found in pipelined SRAMs. Data appears on I/O pins within tCD ≤ 7.5ns after the CLK rising edge-enabling zero-wait-state CPU or FPGA interfaces. This deterministic latency simplifies timing closure in high-speed designs where output register skew would otherwise require additional clock cycles or complex synchronization logic.

What is the function of the ZZ pin on the 71V67703S75BGGI?

The ZZ pin on the 71V67703S75BGGI is an asynchronous sleep mode input. When ZZ = HIGH, the internal clock is gated and the device enters full sleep mode, reducing supply current to IZZ ≤ 70mA (industrial grade). Data retention is guaranteed during sleep. ZZ requires no setup/hold timing relative to CLK and can be asserted at any time-even mid-burst-to minimize dynamic power without disrupting memory contents.

Can the 71V67703S75BGGI perform byte-level writes, and how are they controlled?

Yes, the 71V67703S75BGGI supports granular byte writes via four independent byte write enables (BW1–BW4), each controlling a 9-bit segment of the 36-bit data bus. BW1 governs I/O0–I/O7 and I/OP1; BW2 covers I/O8–I/O15 and I/OP2; and so on. These are enabled only when BWE = LOW and are sampled synchronously on the CLK rising edge-allowing precise 9-bit updates without disturbing adjacent data.