Renesas 71V67703S75BGGI8

Overview

71V67703S75BGGI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, 7.5ns access time at up to 117MHz clock frequency, and JEDEC-standard 119-ball BGA (BGG119) packaging. It supports linear/interleaved burst modes via LBO input, self-timed write with global/byte write control, and industrial temperature operation (–40°C to +85°C), targeting high-bandwidth cache and buffer applications in networking and telecom systems.

For engineers reviewing the 71V67703S75BGGI8 datasheet, 71V67703S75BGGI8 pinout, 71V67703S75BGGI8 application, or 71V67703S75BGGI8 equivalent, this page delivers verified timing parameters, burst sequence behavior, power-down current (IZZ = 50–70mA), flow-through output architecture implications, and precise BGG119 ball mapping - all critical for memory subsystem timing closure and PCB layout validation.

Technical Context

This SRAM implements a synchronous, clock-driven interface with registered address/data inputs and unregistered (flow-through) outputs - eliminating output register latency but requiring careful clock-to-data path matching. Its internal burst counter advances on ADV=LOW and selects linear or interleaved sequences based on static LBO state, enabling four-word bursts per address cycle.

The device uses dual supply rails (VDD = 3.3V ±5% core, VDDQ = 3.3V ±5% I/O), supports single-cycle deselect, and enters full sleep mode via asynchronous ZZ input (IZZ ≤ 70mA). Write operations are controlled synchronously by GW, BWE, and BW1–BW4, with byte-write capability enabling partial-word updates without read-modify-write overhead.

Key Specifications

Pinout & Package

71V67703S75BGGI8 is packaged in a JEDEC-standard 119-ball grid array (BGG119), 12mm × 12mm body, 0.8mm ball pitch, with exposed thermal pad. Pin functions follow the BG119 pinout for 256K × 36 configuration as documented in IDT document 5309 drw 02d.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1373KV18 and AS7C33128PFSIG, the 71V67703S75BGGI8 uniquely combines 256K × 36 density, 7.5ns flow-through timing, industrial temperature support, and dual-rail 3.3V supplies - making it irreplaceable in high-reliability, high-bandwidth synchronous buffer designs requiring burst efficiency and thermal robustness.

Availability

71V67703S75BGGI8 is available at Aetrix Electronics and suitable for networking line cards, telecom baseband processors, industrial PLCs, and ruggedized test equipment requiring stable component supply across extended product lifecycles.

Supply support for 71V67703S75BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, analog, and embedded solutions for industrial, automotive, and communications markets.

The 71V67703S75BGGI8 belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-capable memory subsystems in infrastructure equipment where deterministic timing and industrial reliability are mandatory.

FAQ

What is the maximum operating frequency supported by the 71V67703S75BGGI8?

The 71V67703S75BGGI8 supports up to 117MHz clock frequency, corresponding to a 7.5ns clock-to-data access time (tCD). This is guaranteed across the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions, enabling high-throughput synchronous memory access in demanding infrastructure applications.

Does the 71V67703S75BGGI8 require external wait-state generation for write operations?

No - the 71V67703S75BGGI8 implements a self-timed write cycle. Once GW, BWE, and BWx signals meet setup/hold requirements relative to CLK, internal logic automatically manages write completion without external handshaking or wait-state insertion, simplifying controller design and improving effective bandwidth.

How does the LBO pin affect burst address sequencing in the 71V67703S75BGGI8?

The LBO pin statically selects between linear (LBO = LOW) and interleaved (LBO = HIGH) 4-word burst sequences. Linear mode increments A1:A0 as 00→01→10→11; interleaved mode follows 00→01→11→10. This choice must be fixed before operation and directly impacts cache line traversal efficiency in processor-facing applications.

What is the purpose of the ZZ pin on the 71V67703S75BGGI8, and how does it behave?

The ZZ pin enables full sleep mode: when driven HIGH asynchronously, it gates the internal clock and reduces supply current to IZZ ≤ 70mA while preserving data. Recovery requires ZZ return to LOW and tZZR ≥ 100ns before next valid access - no reset or reinitialization is needed.

Can the 71V67703S75BGGI8 operate with different voltages on VDD and VDDQ rails?

Yes - the 71V67703S75BGGI8 specifies separate 3.3V ±5% supplies: VDD for core logic and VDDQ for I/O drivers. This allows independent noise management and compatibility with mixed-voltage systems, provided both rails remain within their specified tolerance and sequencing constraints (VDD and VDDQ may ramp simultaneously).