Renesas 71V67703S75BQ

Overview

71V67703S75BQ from IDT (now Renesas) is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with flow-through output architecture, 7.5ns access time, and support for 117MHz burst operation. It features self-timed write control via GW/BWE/BWx inputs, linear/interleaved burst mode selection via LBO, and single-cycle deselect capability. Used in high-bandwidth networking buffers and cache subsystems requiring deterministic timing.

For engineers reviewing the 71V67703S75BQ datasheet, 71V67703S75BQ pinout, 71V67703S75BQ application, or 71V67703S75BQ equivalent, key selection criteria include burst address sequencing behavior, flow-through vs. pipelined output latency, ZZ-controlled sleep mode current (≤70mA), and TQFP-100 package compatibility with industrial temperature range (–40°C to +85°C).

Technical Context

This SRAM implements a synchronous interface with clock-triggered address latching via ADSP/ADSC, internal burst counter logic, and asynchronous OE/ZZ controls. The flow-through output path eliminates output register delay, enabling tCD = 7.5ns clock-to-data propagation with no pipeline stage between array and I/O pins.

Burst operation is initiated by ADV=LOW and governed by LBO state: when LBO=LOW, linear sequence (00→01→10→11) applies; when LBO=HIGH, interleaved sequence (00→01→11→10) applies. Write cycles support global (GW) or byte-selectable (BW1–BW4) control with BWE gating, and all writes are self-timed without external wait-state generation.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pinout validated per IDT document 5309 drw 02a for 256K×36 configuration.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-75BGXI and AS7C36256PFSIG-75, the 71V67703S75BQ uniquely combines industrial temperature rating, flow-through latency, and verified 117MHz burst operation - making it the sole option meeting all three requirements simultaneously in TQFP-100.

Availability

71V67703S75BQ is available at Aetrix Electronics and suitable for high-speed network packet buffering, L2 cache tag storage, industrial PLC real-time FIFOs, and radar signal processing buffers requiring stable component supply across extended temperature ranges and long production lifecycles.

Supply support for 71V67703S75BQ includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, designs high-performance memory and timing solutions for communications, computing, and industrial markets.

The 71V67703S75BQ belongs to IDT's 3.3V synchronous SRAM product line, engineered specifically for deterministic-latency applications in networking infrastructure and real-time embedded systems where flow-through timing and industrial reliability are mandatory.

FAQ

What is the maximum operating frequency supported by the 71V67703S75BQ?

The 71V67703S75BQ supports up to 117MHz clock frequency when operated at its 7.5ns speed grade. This maximum frequency is achievable only during burst read operations with tCYC ≥ 8.5ns and under industrial temperature conditions (–40°C to +85°C) with VDD and VDDQ maintained at 3.3V ±5%. Non-burst or write operations may impose lower effective throughput limits due to setup/hold timing constraints.

Does the 71V67703S75BQ support both linear and interleaved burst modes?

Yes, the 71V67703S75BQ supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the device executes linear burst sequencing (00→01→10→11). When LBO is driven HIGH, it executes interleaved sequencing (00→01→11→10). LBO is a static DC input and must remain stable during active operation to prevent burst counter corruption.

How does the flow-through output architecture of the 71V67703S75BQ affect system timing?

The flow-through output architecture of the 71V67703S75BQ eliminates the output register stage found in pipelined SRAMs, resulting in tCD = 7.5ns clock-to-data delay with zero additional pipeline latency. This allows the first burst word to appear on I/O pins precisely 7.5ns after the rising CLK edge - enabling tighter timing closure in high-frequency interfaces such as SerDes MAC layers and real-time DSP buffers.

What is the function of the ZZ pin on the 71V67703S75BQ?

The ZZ pin on the 71V67703S75BQ provides asynchronous entry into full sleep mode. When ZZ is driven HIGH, the internal clock is gated and supply current drops to ≤70mA (IZZ), while memory contents are retained. ZZ is internally pulled to VSS if left unconnected, ensuring default active operation. Recovery requires tZZR ≥ 100ns after ZZ returns LOW before valid accesses resume.

Can the 71V67703S75BQ be used in both 256K×36 and 512K×18 configurations?

Yes, the 71V67703S75BQ is configurable as either 256K×36 or 512K×18 through external address pin routing and mode selection. In 256K×36 mode, A0–A17 serve as address inputs; in 512K×18 mode, A0–A18 are used and data width is halved. Pin configurations differ between modes - refer to IDT document 5309 drw 02a (256K×36) and 5309 drw 02b (512K×18) for TQFP-100 layout details.