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Renesas 71V67703S75BQ8
- Part No.:
- 71V67703S75BQ8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67703S75BQ8.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,275
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Product details
Overview
71V67703S75BQ8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, 7.5ns access time, and burst-mode operation supporting up to 117MHz clock frequency. It features self-timed write, linear/interleaved burst selection via LBO, and single-cycle deselect - deployed in high-speed networking packet buffers and telecom line-card memory subsystems.
For engineers reviewing the 71V67703S75BQ8 datasheet, 71V67703S75BQ8 pinout, 71V67703S75BQ8 application, or 71V67703S75BQ8 equivalent, key selection criteria include burst address sequencing control, flow-through vs. registered output architecture, ZZ-controlled sleep mode power management, and TQFP-100 package compatibility with industrial temperature support.
Technical Context
The 71V67703S75BQ8 implements a synchronous, clock-driven interface with ADSP/ADSC dual-address-status inputs for processor/cache controller coordination. Its internal burst counter advances on ADV low and selects linear or interleaved sequences based on static LBO state - no external counter required.
Write operations are fully synchronous and support four granular modes: global write (GW), byte write enable (BWE), individual byte writes (BW1–BW4), and self-timed cycle termination. The flow-through output path eliminates output register delay, enabling true clock-to-data timing of ≤7.5ns at 117MHz.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-compatible variant |
| Access Time / Max Frequency | 7.5ns access time; enables 117MHz system clock operation with tCYC = 8.5ns |
| Supply Voltages | 3.3V ±5% core (VDD) and I/O (VDDQ); separate power domains reduce noise coupling |
| Burst Mode | Four-word burst per address; LBO pin selects linear or interleaved sequence without software overhead |
| Power Management | Asynchronous ZZ input reduces ICC to ≤70mA (industrial) in full sleep mode; retains data |
| Output Architecture | Flow-through (unregistered) outputs deliver first data on same clock edge as address latch - zero-cycle output latency |
| Temperature Range | Industrial grade: –40°C to +85°C; validated across full voltage and timing margins |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead pitch 0.5mm. Pinout matches PKG100 configuration for 256K × 36 organization per datasheet drawing 5309 drw 02a.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous 19-bit address bus; latched on rising CLK edge with ADSP/ADSC assertion |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs referenced to rising edge |
| GW, BWE, BW1–BW4 | Write Control Inputs | Global write (GW) overrides byte enables; BWE gates BWx; BW1–BW4 each control one 9-bit data byte |
| ADSP / ADSC | Address Status Inputs | ADSP (processor) and ADSC (cache) independently trigger address register load - enables dual-bus arbitration |
| LBO | Burst Order Select | Static DC input: LOW = linear burst (00→01→10→11), HIGH = interleaved (00→01→11→10) |
| ZZ | Asynchronous Sleep Enable | Drives internal clock gate; enters low-power retention mode within 100ns; no PCB reset required on wake |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; flow-through output path; registered input path; parity pins I/OP1–I/OP4 included |
Key Features
| Feature | Design Value |
|---|---|
| Single-cycle deselect | Chip deactivation completes within one CLK cycle - eliminates bus contention during rapid context switching |
| Self-timed write cycle | Internal timing logic terminates write automatically after data stabilization - removes external write-pulse width constraints |
| Flow-through output architecture | Zero-cycle output register delay enables deterministic 7.5ns clock-to-data timing - critical for pipeline-aligned memory access |
| Linear/interleaved burst mode | LBO pin configures burst address sequence at power-up - supports both cache-line (linear) and DRAM-like (interleaved) access patterns |
| Separate VDD/VDDQ supplies | Core and I/O power domains isolated - suppresses switching noise coupling into sensitive analog or mixed-signal sections |
Applications
| Packet Buffer Memory | Telecom Line Card Cache |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in multi-gigabit switch ASICs with strict latency budgets. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to MAC-layer logic via synchronous burst reads/writes. Use Value: 7.5ns access + flow-through outputs meet sub-10ns round-trip timing closure for 117MHz packet processing pipelines. | Use Scenario: Caching protocol headers and control metadata in carrier-grade SDH/SONET line cards. IC Role / Device Role / Timing Role: Burst-mode SRAM serving as fast-access working memory for framer and overhead processor subsystems. Use Value: Linear burst mode (LBO = LOW) delivers sequential header blocks matching SONET STS-192 frame layout - eliminating address calculation overhead. |
| Baseband Processor Memory | Radar Signal Processing Buffer |
Use Scenario: Temporary storage of FFT coefficients and channel estimation data in 4G/5G baseband FPGAs. IC Role / Device Role / Timing Role: Synchronous SRAM co-located with FPGA fabric, accessed via AXI4-Stream or custom parallel interface. Use Value: Industrial temperature rating (–40°C to +85°C) ensures reliable operation in outdoor macrocell enclosures without active cooling. | Use Scenario: Real-time buffering of digitized IF samples in pulsed radar receivers prior to DSP downconversion. IC Role / Device Role / Timing Role: Low-jitter, deterministic-access memory staging raw ADC data for time-critical pulse compression algorithms. Use Value: ZZ sleep mode reduces standby current to ≤70mA while preserving sample integrity - extends battery life in mobile radar platforms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-7BBXC | 256K × 36-bit, 7ns access, 133MHz max, 119-ball BGA only - no TQFP option | Requires BGA rework; lacks LBO-configurable burst order; uses different pinout for ADV/ADSC | Select when board space is constrained and BGA assembly is available; verify ADV timing compatibility |
| AS7C33256P-7TIN | 256K × 36-bit, 7ns access, 133MHz, TQFP-100 but no ZZ sleep or burst mode - asynchronous OE only | No burst addressing or low-power sleep; flow-through output retained but no ADV/LBO control logic | Choose for cost-sensitive designs where burst mode and power gating are unnecessary |
Compared with CY7C1371BV33-7BBXC and AS7C33256P-7TIN, the 71V67703S75BQ8 uniquely combines TQFP-100 packaging, configurable burst sequencing, and asynchronous sleep - enabling drop-in replacement in legacy telecom hardware without layout change or firmware update.
Availability
71V67703S75BQ8 is available at Aetrix Electronics and suitable for packet buffer memory, telecom line card cache, and radar signal processing buffer applications requiring stable component supply across extended product lifecycles.
Supply support for 71V67703S75BQ8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in high-performance memory, microcontrollers, and analog/power solutions for industrial and communications infrastructure.
The 71V67703S75BQ8 belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for deterministic-latency, burst-capable memory subsystems in telecom, networking, and test equipment.
FAQ
What is the maximum operating frequency supported by the 71V67703S75BQ8?
The 71V67703S75BQ8 supports up to 117MHz clock frequency, corresponding to its 7.5ns access time and 8.5ns minimum clock cycle (tCYC). This is validated across the full industrial temperature range (–40°C to +85°C) with 3.3V ±5% supply. Operation above 117MHz violates AC timing specifications and may result in data corruption.
Does the 71V67703S75BQ8 support both linear and interleaved burst modes?
Yes, the 71V67703S75BQ8 supports both linear and interleaved burst modes via the LBO (Linear Burst Order) input pin. When LBO is driven LOW, the device executes linear burst (00→01→10→11); when HIGH, it executes interleaved burst (00→01→11→10). LBO is a static DC input and must remain stable during burst operation.
What is the function of the ZZ pin on the 71V67703S75BQ8?
The ZZ pin on the 71V67703S75BQ8 is an asynchronous sleep mode enable. When driven HIGH, it gates the internal clock and reduces supply current to ≤70mA (industrial grade) while retaining memory contents. Recovery requires tZZR ≥100ns after ZZ returns LOW, and the device must be deselected during wake-up.
How many address bits does the 71V67703S75BQ8 require for 256K × 36 operation?
The 71V67703S75BQ8 requires 18 address bits (A0–A17) for 256K × 36 operation. A18 is unused in this configuration and may be left unconnected or tied to VSS. The pinout diagram (5309 drw 02a) confirms A0–A17 are active, with A18 marked NC for the 256K × 36 variant.
Is the 71V67703S75BQ8 compatible with 512K × 18 memory mapping?
No, the 71V67703S75BQ8 is specifically configured for 256K × 36 operation. The 512K × 18 configuration is implemented in the pin-compatible 71V67903 variant, which repurposes A18 and disables BW3/BW4. Using 71V67703S75BQ8 in 512K × 18 mode will result in incorrect addressing and data corruption.
71V67703S75BQ8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67703S75BQ8 FAQ
1.How can I place an order for 71V67703S75BQ8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S75BQ8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S75BQ8 reliable?
The price and inventory of 71V67703S75BQ8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S75BQ8 is usually 5 days.
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6.How does Aetrix verify that 71V67703S75BQ8 is sourced from the original manufacturer or authorized distributors?
All 71V67703S75BQ8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S75BQ8 meets industry standards.
7.What is the process for return or replacement of 71V67703S75BQ8?
All 71V67703S75BQ8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S75BQ8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S75BQ8 part is unused and in its original packaging.
Return procedure for 71V67703S75BQ8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S75BQ8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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