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Renesas 71V67703S75BQG
- Part No.:
- 71V67703S75BQG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67703S75BQG.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,830
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Product details
Overview
71V67703S75BQG from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, 7.5ns access time at 117MHz, burst counter, and linear/interleaved burst mode selection via LBO pin. It supports self-timed writes with global and byte-level write control, and operates across industrial temperature range (–40°C to +85°C) in a 100-pin TQFP package.
For engineers reviewing the 71V67703S75BQG datasheet, 71V67703S75BQG pinout, 71V67703S75BQG application, or 71V67703S75BQG equivalent, key selection criteria include burst-mode timing compliance, flow-through output latency, single-cycle deselect behavior, 3.3V I/O compatibility, and TQFP thermal/mechanical fit for high-speed memory subsystems.
Technical Context
This SRAM implements a synchronous, clock-driven interface with registered address and data inputs, yet uses a flow-through (unregistered) output path-enabling deterministic tCD = 7.5ns clock-to-data delay without pipeline latency. Its internal burst address counter advances on ADV=LOW and selects sequence order (linear or interleaved) based on static LBO pin state.
Write operations are fully synchronous and support multiple granularities: global write (GW), byte write enable (BWE), and four independent 9-bit byte enables (BW1–BW4). Power management includes asynchronous ZZ-controlled sleep mode with guaranteed data retention and ISB2 current ≤165mA at 117MHz deselect.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit configuration via address mapping |
| Access Time / Max Frequency | 7.5ns access time; supports up to 117MHz clock frequency with full timing compliance |
| Supply Voltages | 3.3V ±5% core (VDD) and 3.3V ±5% I/O (VDDQ); separate power domains |
| Burst Mode | Four-word burst initiated by single address; sequence determined by LBO pin (linear or interleaved) |
| Output Architecture | Flow-through (no output register); eliminates output pipeline delay; tCLZ = 0ns, tCHZ = 3.5ns |
| Power-Down Control | Asynchronous ZZ input gates internal clock; reduces supply current to ≤70mA in full sleep mode |
| Temperature Range | Industrial grade: –40°C to +85°C; validated across full voltage and frequency envelope |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin plastic quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pinout validated per IDT document 5309 drw 02a for 256K × 36 configuration.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching triggered by CLK edge + ADSP/ADSC low; A0–A17 used for 256K×36 addressing |
| CLK | Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; no internal PLL |
| CE, CS0, CS1 | Chip Enable / Selects | Three-level chip select hierarchy; CE active-low gated with CS0 (high-active) and CS1 (low-active) |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE enables byte write; BW1–BW4 select individual 9-bit bytes (I/O0–7/I/OP1, etc.) |
| ADV, ADSP, ADSC, LBO | Burst & Status Control | ADV advances burst counter; ADSP/ADSC load address register; LBO sets burst order (asynchronous, static) |
| OE | Output Enable | Asynchronous; drives I/O pins to high-Z when HIGH; does not affect internal timing or power state |
| ZZ | Sleep Mode Input | Asynchronous high-active; disables internal clock, reduces IDD to ≤70mA; data retention guaranteed |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; registered input path; flow-through output path; VDDQ-referenced I/O |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay: tCD = 7.5ns matches clock-to-data spec without added latency |
| Single-cycle deselect | Outputs go high-Z within one CLK cycle after chip disable; critical for bus turnaround in multiprocessor systems |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved 4-word burst sequences-no firmware overhead or configuration registers |
| Self-timed write cycle | Internal timing logic resolves write completion without external wait-state generation or complex handshake |
| Independent byte-write granularity | Four 9-bit byte lanes (BW1–BW4) allow partial writes without read-modify-write; preserves data integrity in multi-threaded access |
Applications
| High-Speed Network Packet Buffer | Digital Signal Processor (DSP) Data Cache |
|---|---|
Use Scenario: Storing incoming/outgoing Ethernet frames in line-rate switching ASICs requiring sub-10ns memory access. IC Role / Device Role / Timing Role: Primary packet buffer SRAM interfacing directly to MAC-layer logic with synchronous burst reads/writes. Use Value: 7.5ns tCD and single-cycle deselect enable full-duplex 10Gbps frame buffering without pipeline stalls or external wait states. | Use Scenario: Serving as low-latency scratchpad memory for TI C6000 or Analog Devices SHARC DSPs executing real-time FFTs and filtering. IC Role / Device Role / Timing Role: Synchronous data cache supporting burst-mode coefficient loading and sample streaming. Use Value: Flow-through outputs and 117MHz operation deliver deterministic 1-cycle data availability-critical for loop-invariant memory access in pipelined DSP cores. |
| Industrial PLC Motion Control Buffer | Medical Imaging Frame Store |
Use Scenario: Holding position/velocity command streams and encoder feedback in servo drive controllers operating at 20kHz update rates. IC Role / Device Role / Timing Role: Real-time I/O buffer between FPGA motion sequencer and analog output stage. Use Value: Industrial temperature rating (–40°C to +85°C) and ZZ sleep mode support unattended 24/7 operation with thermal margin and low-power idle states. | Use Scenario: Temporary storage of 16-bit ultrasound or MRI pixel data during parallel beamforming and reconstruction. IC Role / Device Role / Timing Role: High-bandwidth frame buffer interfacing to ADC/DAC pipelines and FPGA-based image processors. Use Value: 36-bit bus width and 9Mbit density support 1024×1024×16-bit frame storage; 3.3V I/O ensures clean signal integrity with high-speed ADCs/DACs. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371DV33-7BBXC | 256K × 36-bit, 7ns access, 133MHz max, 119-ball BGA only; no TQFP option; different burst control (BE# instead of LBO) | Requires PCB redesign for BGA; lacks LBO pin for hardware burst-order selection; higher max frequency but tighter layout constraints | Select when board space allows BGA and system requires >117MHz operation; avoid if TQFP mechanical fit or LBO configurability is required. |
| AS7C3256A-7TIN | 256K × 32-bit, 7ns access, 133MHz, 100-pin TQFP; no burst counter; asynchronous OE; no ZZ sleep mode | Lower pin count (32-bit vs 36-bit), no burst capability, no low-power sleep-requires external power management and burst logic | Select for cost-sensitive designs where burst mode is unused and sleep mode is handled externally; verify 32-bit data path compatibility. |
Compared with CY7C1371DV33-7BBXC and AS7C3256A-7TIN, the 71V67703S75BQG uniquely combines TQFP packaging, hardware-configurable burst order (LBO), flow-through outputs, and ZZ sleep mode-making it optimal for space-constrained, thermally demanding, burst-oriented embedded systems needing deterministic latency and low idle power.
Availability
71V67703S75BQG is available at Aetrix Electronics and suitable for high-speed network buffers, DSP data caches, industrial motion control, medical imaging frame stores, and telecom baseband processing requiring stable component supply and long-term industrial-grade reliability.
Supply support for 71V67703S75BQG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for industrial, automotive, and communications infrastructure.
The 71V67703S75BQG belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic low-latency memory subsystems in real-time embedded systems where burst throughput, thermal resilience, and pin-compatible upgrade paths matter.
FAQ
What is the maximum operating frequency supported by the 71V67703S75BQG?
The 71V67703S75BQG supports up to 117MHz clock frequency at 7.5ns access time, verified across the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply. This frequency is guaranteed with compliant setup/hold timing on all synchronous inputs including ADSP, ADSC, CE, and ADV.
Does the 71V67703S75BQG require external wait-state generation for write cycles?
No-the 71V67703S75BQG implements a self-timed write cycle using internal logic that resolves completion without external handshaking. When GW or BWE/BWx signals are asserted on the rising CLK edge, the device internally manages write duration and automatically releases the bus-eliminating need for WAIT# or READY# signals.
How does the LBO pin affect burst behavior in the 71V67703S75BQG?
The LBO pin statically configures burst order: when pulled LOW, it selects linear burst sequence (00→01→10→11); when pulled HIGH, it selects interleaved sequence (00→01→11→10). LBO must remain stable during operation-changing it mid-burst causes undefined address sequencing and potential data corruption in the 71V67703S75BQG.
Can the 71V67703S75BQG operate with only VDD powered while VDDQ is off?
No-both VDD (core) and VDDQ (I/O) must be powered within specification (3.3V ±5%) for reliable operation. The 71V67703S75BQG specifies absolute maximum ratings that prohibit VDDQ < VDD − 0.5V or > VDD + 0.5V, and I/O pins may latch or leak if VDDQ is unpowered while VDD is active. Power sequencing is not required, but simultaneous ramp-up is recommended.
What is the function of the ZZ pin during active operation of the 71V67703S75BQG?
The ZZ pin is asynchronous and inactive (must be held LOW) during normal operation of the 71V67703S75BQG. When driven HIGH, it forces the device into full sleep mode-gating the internal clock, disabling outputs, and reducing supply current to ≤70mA. ZZ has no effect on timing or functionality when LOW; it is purely a power-control signal, not a functional mode selector.
71V67703S75BQG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67703S75BQG FAQ
1.How can I place an order for 71V67703S75BQG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S75BQG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S75BQG reliable?
The price and inventory of 71V67703S75BQG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S75BQG is usually 5 days.
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4.How is shipping managed for 71V67703S75BQG?
71V67703S75BQG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S75BQG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S75BQG?
For technical support, including 71V67703S75BQG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S75BQG requirements.
6.How does Aetrix verify that 71V67703S75BQG is sourced from the original manufacturer or authorized distributors?
All 71V67703S75BQG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S75BQG meets industry standards.
7.What is the process for return or replacement of 71V67703S75BQG?
All 71V67703S75BQG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S75BQG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S75BQG part is unused and in its original packaging.
Return procedure for 71V67703S75BQG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S75BQG Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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M24C02-FMC6TG
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AT24CS02-SSHM-T
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93LC46BT-I/OT
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AT24C04C-SSHM-T
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