Renesas 71V67703S75BQG8

Overview

71V67703S75BQG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through output architecture, 7.5ns access time at up to 117MHz clock frequency, single-cycle deselect, and burst-mode capability. It serves as high-bandwidth data buffer in network packet processors and telecom line cards requiring deterministic latency and zero-output-register delay.

For engineers reviewing the 71V67703S75BQG8 datasheet, 71V67703S75BQG8 pinout, 71V67703S75BQG8 application, or 71V67703S75BQG8 equivalent, this page delivers verified timing parameters, JEDEC-standard TQFP-100 package mapping, burst control logic behavior, and industrial-grade power-down specifications - all confirmed against IDT's official 71V67703/71V67903 datasheet revision Aug.11.21.

Technical Context

The 71V67703S75BQG8 implements a synchronous, clock-driven interface with registered address, control, and data inputs, but unregistered (flow-through) outputs - eliminating output register delay for critical read-path timing. Its internal burst counter supports linear or interleaved 4-word sequences controlled by the asynchronous LBO pin.

Burst initiation is triggered by ADSP/ADSC low with CE low, and subsequent addresses are auto-generated on rising CLK edges. Write operations support global (GW) or byte-level (BW1–BW4 + BWE) control, with self-timed write cycles that complete independently of external timing constraints.

Key Specifications

Pinout & Package

71V67703S75BQG8 is packaged in a 100-pin thin quad flatpack (TQFP), JEDEC MO-140AC, 0.5mm pitch, body size 14mm × 20mm. Pin 1 is located at top-left corner (notch-marked side), with pins numbered counter-clockwise.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371BV33-7BBXC and AS7C3256B-7TIN, the 71V67703S75BQG8 uniquely combines TQFP-100 packaging, ADSP/ADSC cache-interface signaling, and hardware-configurable burst order - making it the only drop-in solution for legacy IDT-based telecom and networking platforms requiring mechanical and functional compatibility.

Availability

71V67703S75BQG8 is available at Aetrix Electronics and suitable for network packet buffering, telecom line card caching, industrial PLC data logging, and medical imaging frame buffering requiring stable component supply across extended product lifecycles.

Supply support for 71V67703S75BQG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V67703S75BQG8 belongs to IDT's 71V67xxx family of flow-through synchronous SRAMs, engineered specifically for low-latency, burst-capable applications in telecom switching, packet processing, and real-time control systems.

FAQ

What is the maximum clock frequency supported by the 71V67703S75BQG8?

The 71V67703S75BQG8 supports up to 117MHz clock frequency, corresponding to its 7.5ns access time rating. This is validated across the commercial temperature range (0°C to +70°C) with VDD and VDDQ at 3.3V ±5%, per datasheet Table 16. Operation above 117MHz is not guaranteed and violates AC timing specifications.

Does the 71V67703S75BQG8 support both linear and interleaved burst modes?

Yes, the 71V67703S75BQG8 supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, it executes linear burst (00→01→10→11); when LBO = HIGH, it executes interleaved burst (00→01→11→10). The LBO pin is asynchronous and must remain static during active operation, as specified in datasheet Table 14 and Table 15.

How does the flow-through output architecture of the 71V67703S75BQG8 reduce read latency?

The 71V67703S75BQG8 uses a flow-through output path - meaning data propagates directly from the memory array to the I/O pins without passing through an output register. This eliminates one clock-cycle delay, achieving tCD = 7.5ns (clock-to-data) instead of typical registered-SRAM values ≥10ns. This is critical for real-time applications like packet forwarding where every nanosecond of latency matters.

What is the function of the ADSP and ADSC pins on the 71V67703S75BQG8?

ADSP (Address Status from Processor) and ADSC (Address Status from Cache Controller) are synchronous inputs that trigger loading of the internal address register. ADSP is gated by CE and used for processor-initiated accesses; ADSC is independent of CE and used for cache-coherent or DMA-initiated accesses. Both are active-low and sampled on the rising edge of CLK, per datasheet Pin Definitions Table 02.

Can the 71V67703S75BQG8 operate in low-power sleep mode, and how is it controlled?

Yes, the 71V67703S75BQG8 enters full sleep mode when the ZZ pin is driven HIGH asynchronously. In this state, internal clock gating reduces supply current to ≤70mA (industrial grade) while retaining all stored data. Recovery requires ZZ return to LOW followed by tZZR ≥100ns before next valid access, as defined in datasheet Table 16 and Truth Table 13.