Renesas 71V67703S75BQGI

Overview

71V67703S75BQGI from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, 7.5ns access time, and single-cycle deselect. It supports interleaved/linear burst modes via LBO input, features self-timed write with global/byte write control, and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking buffers and real-time DSP memory subsystems.

For engineers reviewing the 71V67703S75BQGI datasheet, 71V67703S75BQGI pinout, 71V67703S75BQGI application, or 71V67703S75BQGI equivalent, key selection criteria include burst address sequencing behavior, flow-through vs. pipelined output timing, ZZ-controlled sleep mode current (≤70 mA), and TQFP-100 package compatibility with legacy PCB layouts.

Technical Context

The 71V67703S75BQGI implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs - enabling zero-latency read data delivery after tCD = 7.5ns. Its internal burst counter advances on ADV low and selects linear or interleaved sequences based on static LBO pin state.

Write operations are fully synchronous and support four distinct modes: global write (GW), byte write enable (BWE) with BW1–BW4, or combinations thereof. The device uses dual power domains (VDD = 3.3V ±5% core, VDDQ = 3.3V ±5% I/O) and enters ultra-low-power sleep mode when ZZ > VHD, reducing supply current to ≤70 mA.

Key Specifications

Pinout & Package

Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pin 1 marked by corner notch; pin 14 accepts < VIL voltage (not hard-connected to VSS); pin 64 unused (device remains active if floating).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1371DV33-7BBXC and AS7C331664PFS-75BIN, the 71V67703S75BQGI uniquely delivers 7.5ns flow-through access with programmable burst sequencing and hardware sleep control - essential for latency-sensitive, power-aware embedded systems.

Availability

71V67703S75BQGI is available at Aetrix Electronics and suitable for network packet buffering, DSP real-time data caching, industrial PLC I/O modules, and radar signal processing FIFOs requiring stable component supply and long-term industrial-grade availability.

Supply support for 71V67703S75BQGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, designs high-performance memory and timing solutions for communications, computing, and industrial markets.

The 71V67703S75BQGI belongs to IDT's 71V67xxx family of synchronous SRAMs engineered for ultra-low-latency, burst-capable memory subsystems in bandwidth-constrained real-time systems.

FAQ

What is the maximum operating frequency of the 71V67703S75BQGI?

The 71V67703S75BQGI supports up to 117MHz operation, corresponding to its 7.5ns access time and minimum clock cycle time (tCYC) of 8.5ns. This frequency assumes proper signal integrity, VDD/VDDQ within 3.3V ±5%, and ambient temperature within –40°C to +85°C. At 117MHz, the device delivers sustained burst read/write throughput exceeding 420MB/s on its 36-bit bus.

Does the 71V67703S75BQGI support both linear and interleaved burst modes?

Yes, the 71V67703S75BQGI supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the internal burst counter follows linear sequence (00→01→10→11); when LBO is HIGH, it follows interleaved sequence (00→01→11→10). LBO is a static input and must remain stable during active operation - changing it mid-burst may cause undefined address sequencing.

How does the flow-through output architecture of the 71V67703S75BQGI affect system timing?

The flow-through output architecture of the 71V67703S75BQGI eliminates output register delay, making data valid at the I/O pins within tCD = 7.5ns after the rising edge of CLK. This enables true zero-wait-state read cycles when interfaced with controllers that sample data on the same clock edge - unlike pipelined SRAMs which add one clock cycle of latency. System timing budgets must account for tCLZ (0ns) and tCHZ (≤3.5ns) for output enable transitions.

What is the function of the ZZ pin on the 71V67703S75BQGI?

The ZZ pin on the 71V67703S75BQGI is an asynchronous sleep mode input. When driven HIGH (VIH), it gates the internal clock and reduces supply current to IZZ ≤ 70mA while retaining memory contents. Recovery requires tZZR ≥ 100ns after ZZ returns LOW before valid accesses resume. ZZ must be stable before power-up from sleep; the device must be deselected during wake-up initialization.

Can the 71V67703S75BQGI perform byte-level writes, and how are they controlled?

Yes, the 71V67703S75BQGI supports byte-level writes using BW1–BW4 (each controlling a 9-bit byte: BW1→I/O0–7+I/OP1, BW2→I/O8–15+I/OP2, etc.) gated by BWE. When BWE is LOW at the rising CLK edge, active BWx signals enable corresponding bytes; when BWE is HIGH, only GW can initiate a write. All outputs are disabled during any byte write - ensuring clean bus transitions without read-modify-write overhead.