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Renesas 71V67703S75BQGI8
- Part No.:
- 71V67703S75BQGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 165-TBGA
- Datasheet:
-
71V67703S75BQGI8.pdf
- Description:
- IC SRAM 9MBIT PAR 165CABGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,534
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Product details
Overview
71V67703S75BQGI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, 7.5ns access time, 117MHz clock operation, and JEDEC-standard 100-pin TQFP packaging. It supports linear/interleaved burst modes via LBO input and features self-timed write with global and byte-level write control - deployed in high-speed networking packet buffers and real-time DSP memory subsystems.
For engineers reviewing the 71V67703S75BQGI8 datasheet, 71V67703S75BQGI8 pinout, 71V67703S75BQGI8 application, or 71V67703S75BQGI8 equivalent, key selection criteria include burst-mode timing compliance, single-cycle deselect capability, ZZ-controlled sleep mode current (≤70mA), and industrial-grade temperature support (–40°C to +85°C) confirmed for this speed grade and package.
Technical Context
The 71V67703S75BQGI8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but flow-through (unregistered) data outputs - enabling deterministic tCD = 7.5ns clock-to-data delay. Its internal burst counter advances on ADV low and selects sequence order (linear vs. interleaved) via static LBO pin configuration.
Burst operation delivers four consecutive 36-bit words per address cycle; write cycles are self-timed and support global (GW) or individual byte (BW1–BW4) enable with BWE gating. Power management includes asynchronous ZZ-triggered sleep mode (IZZ ≤ 70mA) and synchronous standby (ISB1 ≤ 70mA) with deselected outputs in high-Z state.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit mode via pin strapping |
| Access Time / Max Frequency | 7.5ns / 117MHz - guarantees sub-8ns read latency under commercial/industrial conditions |
| Core & I/O Voltage | 3.3V ±5% VDD (core), 3.3V ±5% VDDQ (I/O) - eliminates level-shifting in 3.3V system buses |
| Burst Mode Control | LBO pin selects linear or interleaved 4-word burst sequence - no firmware overhead, hardware-configured |
| Write Architecture | Self-timed write with GW (global) and BW1–BW4 (byte-select) enables - allows partial-word updates without read-modify-write |
| Power-Down Mode | Asynchronous ZZ input gates internal clock and reduces supply current to ≤70mA - enables rapid entry/exit from low-power state |
| Operating Temperature | –40°C to +85°C - qualified for industrial embedded applications including base station control planes |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pinout validated for 256K × 36 configuration per IDT document 5309 drw 02a.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge gated by ADSP/ADSC; A0–A17 used for 256K×36 addressing |
| CLK | System Clock Input | Primary timing reference; all synchronous operations referenced to rising edge |
| CE, CS0, CS1 | Chip Enable / Selects | Three-input chip select logic (CE LOW + CS0 HIGH + CS1 LOW) enables device decoding in multi-SRAM systems |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW overrides byte enables; BWE gates BWx signals; BW1–BW4 each control one 9-bit byte (I/O0–7/I/OP1, etc.) |
| OE | Output Enable | Asynchronous - enables flow-through output drivers independently of clock; critical for glueless bus sharing |
| ZZ | Sleep Mode Input | Asynchronous high-active signal that disables internal clock and reduces IDD to ≤70mA without reset |
| LBO | Burst Order Select | Static DC input (LOW = linear, HIGH = interleaved); must remain stable during burst operation |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; input path registered, output path flow-through - eliminates output register delay |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay, enabling tCD = 7.5ns and true single-cycle deselect for bus arbitration |
| Self-timed write cycle | Removes external write-pulse timing constraints; write completion determined internally after final clock edge |
| Linear/interleaved burst mode | Hardware-selectable via LBO pin - matches cache line ordering requirements of PowerPC and MIPS processors |
| Single-cycle deselect | Outputs enter high-Z within one CLK cycle after chip disable - prevents bus contention in multi-master systems |
| Industrial temperature support | Full 7.5ns timing spec guaranteed from –40°C to +85°C - suitable for outdoor telecom and rail infrastructure |
Applications
| Packet Buffer Memory | DSP Data Memory |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decision. IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to MAC controller and traffic manager ASICs. Use Value: 7.5ns tCD and burst-read capability deliver ≥450MB/s sustained throughput at 117MHz, matching 10Gbps line-rate buffering needs. | Use Scenario: Real-time coefficient storage and intermediate result buffering in radar signal processing FPGAs. IC Role / Device Role / Timing Role: Synchronous data memory co-clocked with FPGA fabric, supporting dual-port-like burst access via ADV/LBO. Use Value: Flow-through outputs eliminate pipeline stalls; single-cycle deselect enables dynamic memory partitioning between FFT and filtering stages. |
| Baseband Processor Cache | Industrial PLC Motion Control |
Use Scenario: Instruction/data cache extension for ARM-based wireless baseband processors in small-cell radios. IC Role / Device Role / Timing Role: Off-chip cache SRAM operating at same clock as processor bus, configured in 512K×18 mode for 16-bit instruction alignment. Use Value: ZZ sleep mode reduces idle power to ≤70mA - critical for fanless, thermally constrained radio enclosures. | Use Scenario: Position loop buffer and motion profile storage in servo drive controllers requiring deterministic jitter < 5ns. IC Role / Device Role / Timing Role: Deterministic-access memory for real-time motion trajectory tables, synchronized to PWM timer clocks. Use Value: Guaranteed –40°C to +85°C operation and 7.5ns access ensure sub-microsecond position update latency across ambient extremes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-75BGXI | 256K × 36, 7.5ns, 100-pin TQFP, but uses QDR-II interface with separate read/write clocks | Requires dual-clock domain design; not drop-in compatible due to different control protocol (RD/WRL vs. GW/BW) | Select only when migrating to QDR architecture; not suitable for direct replacement |
| AS7C3256B-75JCIN | 256K × 36, 7.5ns, 100-pin TQFP, but asynchronous OE and no burst mode or ZZ sleep | Lacks burst addressing and hardware sleep - increases software overhead and idle power in battery-backed systems | Prefer where cost sensitivity outweighs power/timing advantages; verify timing margins without burst acceleration |
Compared with CY7C1371BV33-75BGXI and AS7C3256B-75JCIN, the 71V67703S75BQGI8 uniquely combines flow-through timing, hardware-configurable burst order, and asynchronous sleep - delivering lower system-level latency and simpler control logic in industrial and telecom memory subsystems.
Availability
71V67703S75BQGI8 is available at Aetrix Electronics and suitable for packet buffering, DSP data memory, baseband caching, industrial motion control, and telecom infrastructure applications requiring stable component supply across extended product lifecycles.
Supply support for 71V67703S75BQGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) designs high-performance memory and timing solutions for communications, computing, and industrial markets.
The IDT71V67703 family targets high-speed, low-latency memory subsystems in networking equipment and real-time embedded systems - emphasizing deterministic timing, burst efficiency, and industrial reliability.
FAQ
What is the maximum clock frequency supported by the 71V67703S75BQGI8?
The 71V67703S75BQGI8 supports up to 117MHz clock frequency, validated at 7.5ns access time across the full industrial temperature range (–40°C to +85°C). This frequency is guaranteed with proper termination, layout, and VDD/VDDQ decoupling per IDT Application Note AN-5309.
Does the 71V67703S75BQGI8 support both 256K × 36 and 512K × 18 configurations?
Yes, the 71V67703S75BQGI8 supports both configurations. The 256K × 36 mode uses A0–A17 for addressing; the 512K × 18 mode repurposes A18 and reconfigures data width - detailed in the functional description and pin configuration diagrams of the 71V67703S75BQGI8 datasheet.
How does the LBO pin affect burst behavior in the 71V67703S75BQGI8?
The LBO pin statically selects burst order: LOW enables linear sequence (00→01→10→11), HIGH enables interleaved (00→01→11→10). It must remain stable during burst operation; changing LBO mid-burst causes undefined address sequencing and potential data corruption in the 71V67703S75BQGI8.
What is the purpose of the ZZ pin on the 71V67703S75BQGI8?
The ZZ pin provides asynchronous entry into full sleep mode: driven HIGH, it gates the internal clock and reduces supply current to ≤70mA while retaining data. Recovery requires ZZ LOW followed by tZZR ≥ 100ns before next valid access - no reset or initialization needed for the 71V67703S75BQGI8.
Is the 71V67703S75BQGI8 pin-compatible with other members of the IDT71V67703/7903 family?
The 71V67703S75BQGI8 shares identical 100-pin TQFP pinout with IDT71V67903 variants in the same speed grade and package, but differs in address/data mapping for 512K×18 mode (e.g., A18 usage, NC pin assignments). Always verify pin function tables and configuration notes before substitution.
71V67703S75BQGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 165-TBGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 165-CABGA (13x15)
71V67703S75BQGI8 FAQ
1.How can I place an order for 71V67703S75BQGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S75BQGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S75BQGI8 reliable?
The price and inventory of 71V67703S75BQGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S75BQGI8 is usually 5 days.
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4.How is shipping managed for 71V67703S75BQGI8?
71V67703S75BQGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S75BQGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S75BQGI8?
For technical support, including 71V67703S75BQGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S75BQGI8 requirements.
6.How does Aetrix verify that 71V67703S75BQGI8 is sourced from the original manufacturer or authorized distributors?
All 71V67703S75BQGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S75BQGI8 meets industry standards.
7.What is the process for return or replacement of 71V67703S75BQGI8?
All 71V67703S75BQGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S75BQGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S75BQGI8 part is unused and in its original packaging.
Return procedure for 71V67703S75BQGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S75BQGI8 Tags
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M24C02-WMN6TP
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AT24C02C-XHM-T
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AT21CS01-STUM10-T
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