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Renesas 71V67703S75PFG

Part No.:
71V67703S75PFG
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V67703S75PFG.pdf
Description:
IC SRAM 9MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,371

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Product details

Overview

71V67703S75PFG from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, 7.5ns access time, and burst-mode operation up to 117MHz. It features self-timed write control via GW/BWE/BWx, linear/interleaved burst selection via LBO, and industrial-grade temperature support (–40°C to +85°C). Used in high-speed networking packet buffers and real-time DSP data caches.

For engineers reviewing the 71V67703S75PFG datasheet, 71V67703S75PFG pinout, 71V67703S75PFG application, or 71V67703S75PFG equivalent, key selection criteria include burst address sequencing behavior, single-cycle deselect timing, ZZ-controlled sleep mode current (≤70mA), and TQFP-100 package compatibility with JEDEC-standard PCB footprints.

Technical Context

The 71V67703S75PFG implements a synchronous, clock-driven architecture with registered address and control inputs (CE, CS0, CS1, ADSP, ADSC, ADV, GW, BWE, BW1–BW4), while maintaining a flow-through output path-no output register-enabling deterministic tCD = 7.5ns clock-to-data delay. Its internal burst counter advances on ADV low and selects sequence order (linear vs. interleaved) based on static LBO state.

Burst operation delivers four consecutive 36-bit words per address cycle; the first word appears after tCD, subsequent words align to rising CLK edges. Write cycles are self-timed and support global (GW) or byte-level (BWx) granularity, with OE asynchronous for output disable independent of clock phase.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-compatible variant
Access Time / Max Frequency7.5ns / 117MHz - enables single-cycle read throughput in high-clock-rate systems
Core & I/O Voltage3.3V ±5% (VDD and VDDQ) - requires dual 3.3V rails with separate decoupling
Burst ModeLinear or interleaved 4-word burst controlled by LBO pin - defines cache line traversal order
Power-Down CurrentIZZ ≤ 70mA (industrial temp) when ZZ = HIGH - reduces standby power in idle states
Operating Temperature–40°C to +85°C - qualified for industrial embedded and telecom infrastructure use
PackageJEDEC-standard 100-pin TQFP (14mm × 20mm) - surface-mount compatible with standard reflow profiles

Pinout & Package

71V67703S75PFG is packaged in a JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, with 0.5mm pitch. Pin 1 marked by corner notch; pin count and layout conform to PKG100 footprint.

Pin/TerminalCircuit RoleDesign Meaning
A0–A18Address InputsSynchronous address latch triggered by CLK + ADSP/ADSC low; A0–A17 used for 256K×36 mode
CLKSystem Clock InputPrimary timing reference; all synchronous inputs sampled on rising edge
GW, BWE, BW1–BW4Write Control InputsGW enables full 36-bit write; BWE gates BWx; BW1–BW4 select 9-bit bytes (I/O0–7/I/OP1, etc.)
ADSP / ADSCAddress Status InputsADSP (processor) and ADSC (cache controller) load address register; both active-low and gated by CE
LBOBurst Order SelectAsynchronous static input: LOW = linear burst, HIGH = interleaved burst; must not toggle during operation
ZZSleep Mode EnableAsynchronous HIGH disables internal clock and reduces IDD to IZZ; retains data in sleep
I/O0–I/O31, I/OP1–I/OP4Data I/O36-bit bidirectional bus; input path registered, output path flow-through (no latency added)
VDD / VDDQ / VSSPower SuppliesVDD = 3.3V core; VDDQ = 3.3V I/O; multiple VSS pins required for noise suppression

Key Features

FeatureDesign Value
Flow-through output architectureEliminates output register delay - tCD = 7.5ns is pure array access time, critical for timing-critical pipelines
Single-cycle deselectOutputs go high-Z within one CLK cycle after chip disable - prevents bus contention in multi-SRAM systems
Self-timed write cycleInternal timing logic resolves write completion without external wait-state generation - simplifies controller interface
Configurable burst order (LBO)Hardware-selectable linear or interleaved addressing - matches processor/cache burst patterns without firmware overhead
Low-power sleep mode (ZZ)Reduces supply current to ≤70mA while retaining memory contents - enables dynamic power gating in burst-idle intervals

Applications

Packet Buffer in Gigabit Ethernet Switch ASICDSP Data Cache for Real-Time Audio Processing

Use Scenario: Stores ingress/egress packet headers and metadata in line-rate switching fabric.

IC Role / Device Role / Timing Role: High-bandwidth, low-latency SRAM buffer interfacing directly to switch fabric controller with burst-aligned reads.

Use Value: 7.5ns tCD and 117MHz clock enable full 36-bit word delivery every 8.5ns, matching 10Gbps+ packet processing rates.

Use Scenario: Holds intermediate FFT coefficients and filter taps in multi-channel audio DSP subsystems.

IC Role / Device Role / Timing Role: Synchronous data scratchpad with deterministic burst access for coefficient streaming.

Use Value: Linear burst mode (LBO = LOW) delivers contiguous 36-bit samples in lockstep with DSP instruction fetch, eliminating address calculation overhead.

Industrial PLC Motion Control FIFORadar Signal Processing Frame Buffer

Use Scenario: Buffers position setpoints and encoder feedback between motion controller and servo drive.

IC Role / Device Role / Timing Role: Deterministic latency SRAM acting as dual-port FIFO with synchronized read/write clocks.

Use Value: Single-cycle deselect and flow-through outputs ensure jitter-free timing between PLC scan cycles and real-time servo updates.

Use Scenario: Captures and stages baseband IQ samples from ADC before FFT processing in phased-array radar.

IC Role / Device Role / Timing Role: High-throughput frame buffer supporting burst writes from ADC interface and sequential reads to FFT engine.

Use Value: 36-bit width matches 16-bit I/Q + metadata packing; ZZ sleep mode cuts power between radar chirps without data loss.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1371BV33-75AXC256K × 36, 3.3V, 75MHz max (tAA = 7.5ns), but uses different burst control (MODE pin instead of LBO) and lacks ZZ sleepRequires external power management; no hardware sleep mode - unsuitable for duty-cycled radar or battery-backed systemsSelect when LBO flexibility and low-power sleep are not required, and MODE-based burst configuration is acceptable
AS7C3256B-75JCIN256K × 36, 3.3V, 75MHz, no burst mode - only random-access reads/writes; no ADV, ADSP, ADSC, or LBO pinsCannot support burst-oriented protocols (e.g., PCI-X, legacy RISC cache lines); limited to simple FIFO or register-file useSelect only for non-burst applications where cost is primary and timing determinism is less critical than feature set

Compared with CY7C1371BV33-75AXC and AS7C3256B-75JCIN, the 71V67703S75PFG uniquely combines 117MHz burst capability, hardware-configurable burst order (LBO), and ZZ-controlled deep-sleep - making it optimal for high-throughput, power-aware embedded systems requiring precise timing control.

Availability

71V67703S75PFG is available at Aetrix Electronics and suitable for industrial PLC motion control, telecom packet buffering, and radar signal processing applications requiring stable component supply across extended product lifecycles.

Supply support for 71V67703S75PFG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for industrial, automotive, and communications markets.

The 71V67703S75PFG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for low-latency, burst-capable data buffering in network processors, DSPs, and real-time control systems.

FAQ

What is the maximum operating frequency of the 71V67703S75PFG?

The 71V67703S75PFG supports up to 117MHz clock frequency at its 7.5ns access time rating. This is validated under commercial and industrial temperature ranges with VDD/VDDQ = 3.3V ±5%. The device achieves this performance using a flow-through output architecture that eliminates output register delay, ensuring tCD remains fixed at 7.5ns regardless of clock phase alignment.

Does the 71V67703S75PFG support both linear and interleaved burst modes?

Yes, the 71V67703S75PFG supports both linear and interleaved burst sequences via the LBO (Linear Burst Order) pin. When LBO = LOW, the device executes linear burst (00→01→10→11); when LBO = HIGH, it executes interleaved burst (00→01→11→10). This selection is static and must remain stable during operation - toggling LBO mid-burst is undefined and may corrupt data.

How does the ZZ pin function in the 71V67703S75PFG?

The ZZ pin on the 71V67703S75PFG is an asynchronous sleep mode enable. When driven HIGH, it internally gates the CLK signal and reduces supply current to ≤70mA (industrial grade) while retaining all stored data. Recovery requires tZZR ≥ 100ns after ZZ returns LOW and the device must be deselected during wake-up. ZZ operates independently of other control signals and has internal pull-down.

What is the pin compatibility status between 71V67703S75PFG and 71V67903S75PFG?

The 71V67703S75PFG (256K × 36) and 71V67903S75PFG (512K × 18) share identical pinouts in the 100-pin TQFP package, including identical power, clock, control, and I/O assignments. However, address pin usage differs: 71V67703 uses A0–A17; 71V67903 uses A0–A18. BW3/BW4 are unused on 71V67903 and must be tied LOW or NC per datasheet guidance.

Can the 71V67703S75PFG operate with only a single 3.3V supply?

No - the 71V67703S75PFG requires two independent 3.3V supplies: VDD (core logic) and VDDQ (I/O drivers). Although both are 3.3V ±5%, they must be separately decoupled. Mixing VDD and VDDQ violates the AC electrical specifications and risks timing violations, especially on tCD and tOHZ, due to I/O driver noise coupling into core logic.

71V67703S75PFG Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
256K x 36
Memory Interface:
Parallel
Clock Frequency:
117 MHz
Write Cycle Time - Word, Page:
-
Access Time:
7.5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V67703S75PFG FAQ

1.How can I place an order for 71V67703S75PFG through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67703S75PFG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67703S75PFG reliable?

The price and inventory of 71V67703S75PFG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S75PFG is usually 5 days.

3.What payment methods are accepted for 71V67703S75PFG?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S75PFG transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V67703S75PFG?

71V67703S75PFG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67703S75PFG order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67703S75PFG?

For technical support, including 71V67703S75PFG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S75PFG requirements.

6.How does Aetrix verify that 71V67703S75PFG is sourced from the original manufacturer or authorized distributors?

All 71V67703S75PFG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S75PFG meets industry standards.

7.What is the process for return or replacement of 71V67703S75PFG?

All 71V67703S75PFG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S75PFG, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67703S75PFG part is unused and in its original packaging.

Return procedure for 71V67703S75PFG:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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