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Renesas 71V67703S75PFG8

Part No.:
71V67703S75PFG8
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V67703S75PFG8.pdf
Description:
IC SRAM 9MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,185

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Product details

Overview

71V67703S75PFG8 from IDT is a 256K × 36-bit (9-Mbit), 3.3V synchronous SRAM with flow-through outputs, 7.5ns access time at 117MHz, single-cycle deselect, and burst-mode operation. It features global/byte write control, LBO-selectable linear/interleaved burst order, and ZZ-controlled power-down - deployed in high-speed networking packet buffers and real-time DSP data caches.

For engineers reviewing the 71V67703S75PFG8 datasheet, 71V67703S75PFG8 pinout, 71V67703S75PFG8 application, or 71V67703S75PFG8 equivalent, key selection criteria include burst timing compliance, 3.3V I/O voltage tolerance, TQFP-100 package footprint, and industrial-grade temperature support up to +85°C.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address/data inputs and unregistered (flow-through) outputs. Its internal burst counter advances on ADV=LOW and supports four-word bursts defined by LBO state - linear (LBO=LOW) or interleaved (LBO=HIGH) - with no output register delay between clock edge and valid data.

The device uses dual supply rails: 3.3V ±5% for core logic (VDD) and separate 3.3V ±5% for I/O (VDDQ), enabling clean signal integrity. Power management includes asynchronous ZZ sleep mode (IZZ ≤ 70mA) and synchronous standby modes (ISB1 ≤ 70mA), all validated across –40°C to +85°C industrial temperature range.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization256K × 36-bit (9,175,040 bits); supports 512K × 18-bit via pin-compatible variant mapping
Access Time / Max Frequency7.5ns access time; supports up to 117MHz system clock (tCYC = 8.5ns min)
Supply VoltagesVDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); independent rail control enables noise isolation
Burst ModeFour-word synchronous burst initiated by ADV=LOW; sequence determined by LBO pin state
Power-Down CurrentIZZ ≤ 70mA in full sleep mode (ZZ HIGH); enables low-power idle states in telecom line cards
Operating Temperature–40°C to +85°C industrial grade; qualified per JEDEC JESD22-A108
PackageJEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, lead-free (Pb-free) finish

Pinout & Package

71V67703S75PFG8 is packaged in a JEDEC-standard 100-pin TQFP (PKG100), 14mm × 20mm body, with 0.5mm pitch and exposed thermal pad. Pinout follows the 256K × 36 configuration per IDT document 5309 drw 02a.

Pin/TerminalCircuit RoleDesign Meaning
A0–A18Address InputsSynchronous address latching on rising CLK edge when ADSP/ADSC active; A0–A17 used for 256K × 36 addressing
CLKSystem Clock InputPrimary timing reference; all synchronous operations (read/write/burst) referenced to rising edge
GW, BWE, BW1–BW4Write Control InputsGW enables full 36-bit writes; BWE gates byte writes; BW1–BW4 select 9-bit bytes (I/O0–7+I/OP1, etc.)
OEAsynchronous Output EnableDrives I/O pins to high-Z when HIGH; enables fast output disable independent of CLK
LBOBurst Order SelectDC-level input: LOW = linear burst (00→01→10→11), HIGH = interleaved burst (00→01→11→10)
ZZAsynchronous Sleep ModeInternally gates CLK and reduces current to IZZ ≤ 70mA; no sequencing required with VDD/VDDQ
I/O0–I/O31, I/OP1–I/OP4Data I/O36-bit bidirectional bus; flow-through output path ensures tCD ≤ 7.5ns from CLK↑ to valid data

Key Features

FeatureDesign Value
Flow-through output architectureEliminates output register delay: data appears on I/O pins within 7.5ns of CLK↑, critical for deterministic latency in packet forwarding
Single-cycle deselectChip deactivation completes within one clock cycle - enables rapid context switching between memory banks in multi-processor systems
Self-timed write cycleInternal timing logic resolves write completion without external wait-state generation, simplifying FPGA interface design
Linear/interleaved burst selectionLBO pin configures burst address sequence at power-up; supports both cache-line (linear) and interleaved memory controller topologies
Separate VDD/VDDQ suppliesIsolates core logic noise from I/O drivers, maintaining signal integrity in mixed-signal SoC backplanes

Applications

High-Speed Packet BufferingReal-Time DSP Data Cache

Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before classification and forwarding.

IC Role / Device Role / Timing Role: Primary data buffer with deterministic 7.5ns read latency and burst-mode throughput matching 10Gbps MAC interfaces.

Use Value: Enables zero-wait-state frame buffering at line rate; flow-through outputs eliminate pipeline stalls in cut-through switching architectures.

Use Scenario: Holding coefficient tables and intermediate results in radar signal processing FPGAs operating at 100+ MHz.

IC Role / Device Role / Timing Role: Low-latency scratchpad memory accessed synchronously with DSP core clock; supports four-word burst reads per instruction.

Use Value: Reduces memory stall cycles by 75% vs. non-burst SRAM; single-cycle deselect allows rapid bank switching between FFT and filtering stages.

Telecom Line Card Control MemoryIndustrial PLC Motion Control Buffer

Use Scenario: Storing configuration registers and status logs in carrier-grade optical transport equipment requiring -40°C to +85°C operation.

IC Role / Device Role / Timing Role: Industrial-temperature SRAM interfaced to ARM-based control processors; ZZ sleep mode reduces standby power during link idle periods.

Use Value: Guarantees data retention in sleep mode; TQFP-100 package supports reflow-compatible assembly in high-reliability telecom modules.

Use Scenario: Buffering position feedback and trajectory commands between motion controller ASICs and servo drives in CNC machines.

IC Role / Device Role / Timing Role: Deterministic-access memory for real-time closed-loop control loops running at 20kHz update rates.

Use Value: 7.5ns tCD ensures command latency < 8ns - meeting sub-microsecond jitter budgets for nanometer-precision axis control.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1373KV18512K × 18-bit organization; 8ns access; 165-ball fBGA only; no LBO pin - fixed linear burstRequires PCB redesign for BGA footprint and narrower data bus; lacks burst-order flexibilitySelect when higher density (9-Mbit same) and BGA space savings outweigh TQFP compatibility and burst configurability needs
AS7C36256PFSIG256K × 36-bit; 10ns access; 100-pin TQFP; no burst mode; asynchronous interfaceNon-burst, slower access limits throughput in high-clock-rate systems; no ADV/LBO/ZZ controlsChoose only for cost-sensitive legacy designs where burst performance and low-power sleep are not required

Compared with CY7C1373KV18 and AS7C36256PFSIG, the 71V67703S75PFG8 uniquely delivers 7.5ns flow-through timing in TQFP-100 with configurable burst order and ZZ sleep - making it optimal for new industrial and telecom designs demanding latency determinism and power-aware operation.

Availability

71V67703S75PFG8 is available at Aetrix Electronics and suitable for high-speed packet buffering, real-time DSP caching, and industrial PLC motion control requiring stable component supply across extended temperature ranges.

Supply support for 71V67703S75PFG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology) is a semiconductor company specializing in timing, memory interface, RF, and sensor solutions, now part of Renesas Electronics since 2019.

The 71V67703 family targets high-performance embedded systems requiring deterministic memory access - designed specifically for networking, telecom infrastructure, and real-time control applications where burst bandwidth and low-latency predictability are critical.

FAQ

What is the maximum clock frequency supported by the 71V67703S75PFG8?

The 71V67703S75PFG8 supports up to 117MHz clock frequency, corresponding to a minimum clock cycle time (tCYC) of 8.5ns and guaranteed 7.5ns access time (tCD). This rating is validated across the full industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions.

Does the 71V67703S75PFG8 support both linear and interleaved burst modes?

Yes, the 71V67703S75PFG8 supports both burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO is driven LOW, the device executes linear burst (00→01→10→11); when HIGH, it executes interleaved burst (00→01→11→10). LBO is a static DC input and must remain stable during operation.

What is the function of the ZZ pin on the 71V67703S75PFG8?

The ZZ pin on the 71V67703S75PFG8 is an asynchronous sleep mode input. When driven HIGH, it internally gates the CLK signal and reduces supply current to ≤70mA (IZZ), while guaranteeing data retention. No power supply sequencing is required, and the device resumes normal operation within tZZR ≤ 100ns after ZZ returns LOW.

How many address pins does the 71V67703S75PFG8 have, and what memory size do they support?

The 71V67703S75PFG8 has 19 address pins (A0–A18), configured for 256K × 36-bit organization (requiring A0–A17). A18 is NC in this configuration. The same pinout supports 512K × 18-bit variants (e.g., 71V67903) where A18 becomes active and BW3/BW4 are NC.

Is the 71V67703S75PFG8 compatible with 3.3V-only system designs?

Yes, the 71V67703S75PFG8 requires two 3.3V supplies: VDD = 3.3V ±5% for core logic and VDDQ = 3.3V ±5% for I/O. Both rails are independent, allowing noise isolation. Input thresholds meet 3.3V logic levels (VIH ≥ 2.0V, VIL ≤ 0.8V), and outputs drive to VOH ≥ 2.4V / VOL ≤ 0.4V under load.

71V67703S75PFG8 Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
256K x 36
Memory Interface:
Parallel
Clock Frequency:
117 MHz
Write Cycle Time - Word, Page:
-
Access Time:
7.5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
0°C ~ 70°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V67703S75PFG8 FAQ

1.How can I place an order for 71V67703S75PFG8 through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67703S75PFG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67703S75PFG8 reliable?

The price and inventory of 71V67703S75PFG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S75PFG8 is usually 5 days.

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We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S75PFG8 transactions.

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71V67703S75PFG8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67703S75PFG8 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67703S75PFG8?

For technical support, including 71V67703S75PFG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S75PFG8 requirements.

6.How does Aetrix verify that 71V67703S75PFG8 is sourced from the original manufacturer or authorized distributors?

All 71V67703S75PFG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S75PFG8 meets industry standards.

7.What is the process for return or replacement of 71V67703S75PFG8?

All 71V67703S75PFG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S75PFG8, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67703S75PFG8 part is unused and in its original packaging.

Return procedure for 71V67703S75PFG8:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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