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Renesas 71V67703S75PFGI

Part No.:
71V67703S75PFGI
Manufacturer:
Renesas
Category:
Memory
Package:
100-LQFP
Datasheet:
Aetrix71V67703S75PFGI.pdf
Description:
IC SRAM 9MBIT PARALLEL 100TQFP
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,560

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Product details

Overview

71V67703S75PFGI from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs and single-cycle deselect. It delivers 7.5ns access time at up to 117MHz clock frequency, supports linear/interleaved burst modes via LBO input, and features self-timed write with global and byte-level write control. It is used in high-speed networking line cards requiring deterministic low-latency memory access.

For engineers reviewing the 71V67703S75PFGI datasheet, 71V67703S75PFGI pinout, 71V67703S75PFGI application, or 71V67703S75PFGI equivalent, key selection criteria include burst-mode timing compliance, TQFP-100 package compatibility, 3.3V I/O voltage tolerance, industrial temperature support (–40°C to +85°C), and ZZ-controlled power-down behavior.

Technical Context

The 71V67703S75PFGI implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs-enabling zero-cycle output latency after clock edge. Its internal burst counter advances on ADV=LOW and selects sequence order (linear vs. interleaved) based on static LBO state.

Write operations are fully synchronous and support four distinct configurations: global write (GW), byte-write enable (BWE) gated individual byte writes (BW1–BW4), and asynchronous OE-controlled output disable. Power management includes active standby (ISB1), clock-running standby (ISB2), and full sleep mode (IZZ) triggered by ZZ HIGH.

Key Specifications

ParameterValue and Actual Design Meaning
Memory Organization256K × 36-bit (9Mbit); supports 512K × 18-bit via address remapping
Access Time / Max Frequency7.5ns access time; enables 117MHz system clock operation
Supply VoltagesVDD = 3.3V ±5% (core), VDDQ = 3.3V ±5% (I/O); separate supplies allow I/O voltage domain isolation
Burst ModeFour-word burst per address; LBO pin selects linear or interleaved sequence (static configuration)
Power-Down CurrentIZZ ≤ 70mA (industrial grade); ZZ HIGH disables internal clock and minimizes dynamic power
Operating Temperature–40°C to +85°C (industrial grade); validated for embedded telecom infrastructure
PackageJEDEC-standard 100-pin TQFP (14mm × 20mm); lead-free, RoHS-compliant

Pinout & Package

71V67703S75PFGI is packaged in a 100-pin thin quad flatpack (TQFP), JEDEC MO-145AC, 14mm × 20mm body, 0.5mm pitch. Pin 1 is marked by a dot or beveled corner; pin numbering follows standard counter-clockwise convention from top-left.

Pin/TerminalCircuit RoleDesign Meaning
A0–A18Address InputsSynchronous address latch triggered by CLK rising edge + ADSP/ADSC LOW; A0–A17 used for 256K×36 mode
CLKSystem Clock InputPrimary timing reference; all synchronous inputs sampled on rising edge; no internal clock division
GW, BWE, BW1–BW4Write Control InputsGW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7/I/OP1, etc.)
OEOutput EnableAsynchronous; drives I/O pins to high-Z when HIGH, regardless of clock or chip select state
LBOBurst Order SelectDC-level input: LOW = linear burst (00→01→10→11), HIGH = interleaved (00→01→11→10); must remain static during operation
ZZSleep Mode InputAsynchronous HIGH activates full sleep mode; gates internal CLK and reduces supply current to ≤70mA (industrial)
I/O0–I/O31, I/OP1–I/OP4Data I/O36-bit bidirectional bus; input path registered, output path flow-through (no output register delay)
VDD, VDDQ, VSSPower/GroundVDD = core logic (3.3V), VDDQ = I/O drivers (3.3V), VSS = common ground; decoupling required per datasheet layout guidelines

Key Features

FeatureDesign Value
Flow-through output architectureZero-cycle output latency: data appears on I/O pins within tCD (≤7.5ns) after CLK rising edge-critical for pipeline-aligned systems
Single-cycle deselectChip deactivation completes within one clock cycle; eliminates bus contention windows during rapid chip-select switching
Self-timed write cycleInternal timing logic determines write completion without external wait-state generation; simplifies controller interface
Configurable burst addressingLBO pin statically defines burst sequence order-enables optimization for cache-line or DMA-aligned access patterns
Multi-level power managementThree distinct low-power states: standby (ISB1), clock-running standby (ISB2), and full sleep (IZZ)-supports dynamic power scaling

Applications

High-Speed Network SwitchingTelecom Line Card Buffering

Use Scenario: Storing packet header metadata and forwarding tables in Layer 2/L3 switching ASICs.

IC Role / Device Role / Timing Role: Low-latency, burst-capable SRAM serving as on-chip buffer between MAC and switch fabric interfaces.

Use Value: 7.5ns tCD and flow-through outputs meet sub-10ns pipeline timing budgets; single-cycle deselect prevents inter-packet interference.

Use Scenario: Holding real-time voice sample buffers and protocol stack context in E1/T1 line interface units.

IC Role / Device Role / Timing Role: Synchronous memory interfacing directly with DSP or FPGA-based framing logic.

Use Value: 117MHz clock support matches TDM frame rates; industrial temperature rating ensures reliability in uncooled chassis environments.

Industrial PLC Data LoggingRadar Signal Processing FIFO

Use Scenario: Capturing sensor timestamped events and process variables in deterministic automation controllers.

IC Role / Device Role / Timing Role: High-reliability SRAM acting as dual-port-accessible circular buffer for time-critical logging.

Use Value: ZZ sleep mode reduces idle power to ≤70mA; –40°C to +85°C rating guarantees operation in factory-floor enclosures.

Use Scenario: Implementing ping-pong FIFOs for ADC sample buffering in phased-array radar front-ends.

IC Role / Device Role / Timing Role: Burst-mode SRAM providing four-sample bursts synchronized to ADC sampling clock.

Use Value: Linear/interleaved burst selection (LBO) aligns with FFT bin ordering; 3.3V I/O matches FPGA I/O banks without level-shifting.

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
CY7C1371BV33-75BGXI256K × 36-bit, 75MHz max (13.3ns), 119-ball BGA only; no LBO or ADV pin; fixed linear burstLacks configurable burst order and ADV-controlled burst suspension; unsuitable for protocols requiring interleaved addressingSelect only if board uses BGA footprint and burst sequence is fixed; verify tCD ≥13.3ns meets system timing.
AS7C3256A-75PCN256K × 36-bit, 75MHz max (13.3ns), 100-pin TQFP; no burst mode; asynchronous OE and CENo burst capability or flow-through outputs; requires external address sequencing logic for multi-word transfersChoose only for cost-sensitive legacy designs where burst performance is unnecessary and timing margins exceed 13.3ns.

Compared with CY7C1371BV33-75BGXI and AS7C3256A-75PCN, the 71V67703S75PFGI uniquely delivers 7.5ns access with programmable burst order and flow-through outputs in a drop-in-compatible TQFP-100 package-enabling higher throughput in burst-oriented architectures without FPGA logic overhead.

Availability

71V67703S75PFGI is available at Aetrix Electronics and suitable for high-speed network switching, telecom line card buffering, and industrial PLC data logging requiring stable component supply across extended product lifecycles.

Supply support for 71V67703S75PFGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

IDT (Integrated Device Technology), now part of Renesas Electronics, is a fabless semiconductor company specializing in high-performance timing, memory, and interface solutions for communications and computing infrastructure.

The 71V67703S75PFGI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for deterministic, low-latency memory subsystems in telecom, networking, and industrial real-time control applications.

FAQ

What is the maximum operating frequency supported by the 71V67703S75PFGI?

The 71V67703S75PFGI supports up to 117MHz clock frequency, corresponding to its 7.5ns access time specification. This is validated over the full industrial temperature range (–40°C to +85°C) and under worst-case voltage conditions (VDD = 3.135V). System-level timing must account for setup/hold requirements including tSA (1.5ns min), tHA (0.5ns min), and tCH/tCL (3ns min each).

Does the 71V67703S75PFGI support both 256K×36 and 512K×18 configurations?

Yes, the 71V67703S75PFGI is internally organized as 256K × 36-bit but supports 512K × 18-bit operation through address remapping-using A18 as word-select and collapsing the 36-bit bus into two 18-bit halves. Pin compatibility is maintained; however, BW3/BW4 are unused in 512K×18 mode per datasheet note.

How does the LBO pin affect burst behavior in the 71V67703S75PFGI?

The LBO pin is a static DC input that selects burst order: LOW enables linear sequence (00→01→10→11), HIGH enables interleaved (00→01→11→10). It must not change during active burst operation. The 71V67703S75PFGI implements this via hardwired logic-not programmable registers-so configuration occurs at power-up or reset and remains fixed until next power cycle.

What is the power consumption of the 71V67703S75PFGI in sleep mode?

In full sleep mode (ZZ HIGH), the 71V67703S75PFGI draws ≤70mA supply current (ISB2) under industrial conditions (VDD = 3.465V, TA = +85°C). This represents >80% reduction versus active operation (IDD = 285mA max), while guaranteeing data retention. No external refresh or backup power is required.

Is the 71V67703S75PFGI pin-compatible with other members of the 71V67xx family?

The 71V67703S75PFGI shares identical pinout and AC/DC specifications with the 71V67903 in TQFP-100 package, differing only in memory organization (256K×36 vs. 512K×18) and BW3/BW4 functionality. Direct substitution is possible if application logic accommodates the different data width and ignores unused byte enables.

71V67703S75PFGI Specifications

Product attributes
Attribute value
Manufacturer:
Renesas
Series:
-
Package/Case:
100-LQFP
Packaging:
Tray
Product Status:
Active
Programmable:
Not Verified
Memory Type:
Volatile
Memory Format:
SRAM
Technology:
SRAM - Synchronous, SDR
Memory Size:
9Mbit
Memory Organization:
256K x 36
Memory Interface:
Parallel
Clock Frequency:
117 MHz
Write Cycle Time - Word, Page:
-
Access Time:
7.5 ns
Voltage - Supply:
3.135V ~ 3.465V
Operating Temperature:
-40°C ~ 85°C (TA)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
100-TQFP (14x14)

71V67703S75PFGI FAQ

1.How can I place an order for 71V67703S75PFGI through Aetrix?

Please submit a Request for Quotation (RFQ) for 71V67703S75PFGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for 71V67703S75PFGI reliable?

The price and inventory of 71V67703S75PFGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S75PFGI is usually 5 days.

3.What payment methods are accepted for 71V67703S75PFGI?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S75PFGI transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for 71V67703S75PFGI?

71V67703S75PFGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your 71V67703S75PFGI order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for 71V67703S75PFGI?

For technical support, including 71V67703S75PFGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S75PFGI requirements.

6.How does Aetrix verify that 71V67703S75PFGI is sourced from the original manufacturer or authorized distributors?

All 71V67703S75PFGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S75PFGI meets industry standards.

7.What is the process for return or replacement of 71V67703S75PFGI?

All 71V67703S75PFGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S75PFGI, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The 71V67703S75PFGI part is unused and in its original packaging.

Return procedure for 71V67703S75PFGI:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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