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Renesas 71V67703S75PFGI8
- Part No.:
- 71V67703S75PFGI8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 100-LQFP
- Datasheet:
-
71V67703S75PFGI8.pdf
- Description:
- IC SRAM 9MBIT PARALLEL 100TQFP
- Quantity:
- Payment:
- Shipping:
Inventory:4,368
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Product details
Overview
71V67703S75PFGI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through output architecture, 7.5ns access time at up to 117MHz clock frequency, single-cycle deselect, and industrial temperature support (–40°C to +85°C). It serves as high-bandwidth buffer or cache memory in network packet processors and telecom line cards requiring burst-mode data throughput.
For engineers reviewing the 71V67703S75PFGI8 datasheet, 71V67703S75PFGI8 pinout, 71V67703S75PFGI8 application, or 71V67703S75PFGI8 equivalent, key selection criteria include its TQFP-100 package, linear/interleaved burst mode via LBO pin, self-timed write with byte-level granularity (BW1–BW4), and flow-through read latency independent of clock-to-output register delay.
Technical Context
The 71V67703S75PFGI8 implements a synchronous, clock-driven interface with registered address and data inputs, but unregistered (flow-through) outputs-enabling zero-cycle output latency after clock edge. Its internal burst counter advances on ADV=LOW and supports four-word bursts defined by LBO state (linear or interleaved).
Write control is hierarchical: GW enables full 36-bit writes, BWE gates individual byte writes (BW1–BW4), and all synchronous controls (CE, CS0, CS1, ADSP/ADSC) require setup/hold timing relative to CLK. Power-down is managed asynchronously via ZZ input, reducing supply current to ≤70mA in full sleep mode.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-compatible variant |
| Access Time | 7.5ns maximum - guarantees valid data within 7.5ns after rising CLK edge for read cycles at 117MHz |
| Operating Voltage | 3.3V ±5% core (VDD) and I/O (VDDQ) - requires dual-rail 3.3V supply with separate VSS planes |
| Burst Mode | Linear or interleaved 4-word burst controlled by LBO pin - eliminates external address sequencing logic |
| Output Architecture | Flow-through (no output register) - eliminates clock-to-output register delay, enabling deterministic read latency |
| Temperature Range | –40°C to +85°C industrial grade - qualified for base station, industrial control, and aerospace avionics |
| Power-Down Current | ≤70mA in ZZ-active sleep mode - reduces system standby power without data loss |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14mm × 20mm body, 0.5mm pitch. Pin 1 marked by dot; top-side marking includes "71V67703S75PFGI8" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous 19-bit address bus; A0/A1 define burst order; A17/A18 used only in 512K×18 mode |
| CLK | System Clock Input | Rising-edge-triggered timing reference for all synchronous operations; no internal clock division |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE enables byte writes; BW1–BW4 select 9-bit bytes (I/O0–7+I/OP1, etc.) |
| ADSP / ADSC | Address Status Inputs | ADSP (processor) and ADSC (cache controller) load address register; both active-low, synchronous |
| LBO | Burst Order Select | Asynchronous static input: LOW = linear burst (00→01→10→11), HIGH = interleaved (00→01→11→10) |
| ZZ | Asynchronous Sleep Enable | HIGH disables internal clock and reduces IDD to ≤70mA; retains data without refresh |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; flow-through output path; registered input path; VDDQ-referenced I/O |
| VDD, VDDQ, VSS | Power Supplies | VDD (3.3V core), VDDQ (3.3V I/O), and dedicated VSS pins per functional block - require local decoupling |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay - read data appears on I/O pins within tCD (7.5ns) of CLK rise, critical for low-latency packet buffering |
| Self-timed write cycle | Internal timing logic completes write without external wait-state generation - simplifies FPGA/CPU interface design |
| Single-cycle deselect | Device enters high-Z output state within one CLK cycle after CE/CS deassertion - prevents bus contention in multi-SRAM systems |
| Byte-selectable write (BW1–BW4) | Enables 9-bit sub-word writes without masking logic - reduces power and bus traffic in partial-update applications |
| Industrial temperature qualification | Validated operation from –40°C to +85°C with full AC/DC specs - suitable for outdoor telecom and rail infrastructure |
Applications
| Packet Buffering in Switch ASICs | Cache Memory in Baseband Processors |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switching chips before forwarding decision. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM providing 36-bit parallel interface to switch fabric controller with burst-mode read/write. Use Value: 7.5ns tCD and flow-through output enable sub-10ns frame header lookup latency; single-cycle deselect prevents bus glitches during rapid queue switching. | Use Scenario: Acting as L1 instruction/data cache for multi-core DSPs in 4G/5G baseband units. IC Role / Device Role / Timing Role: Synchronous SRAM delivering 117MHz burst reads to match processor pipeline bandwidth. Use Value: Linear burst mode (LBO=LOW) delivers sequential instructions in lockstep with CPU fetch; ZZ sleep mode cuts idle power by >65% during low-traffic intervals. |
| Real-Time Video Frame Buffer | Industrial PLC Data Logging Buffer |
Use Scenario: Temporary storage of uncompressed HD video lines during format conversion in broadcast encoders. IC Role / Device Role / Timing Role: Dual-port-capable SRAM (via time-multiplexed CE/ADV) buffering pixel streams between sensor interface and encoder engine. Use Value: 256K×36 organization holds ≥1.5 lines of 1920×1080@8bpp; tOE=3.5ns ensures glitch-free pixel clock domain crossing. | Use Scenario: Capturing sensor telemetry at 10kHz in ruggedized factory automation controllers. IC Role / Device Role / Timing Role: Non-volatile-buffered SRAM interfaced to ARM Cortex-M7 via FSMC with byte-write capability. Use Value: Industrial temp rating (–40°C to +85°C) and ≤70mA ZZ sleep current ensure reliable logging in uncooled cabinets; BW1–BW4 reduce write energy per sample by 75% vs full-word writes. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1373KV18 | 512K × 18-bit, 6.5ns access, 133MHz max, 165-ball fBGA only - no TQFP option | Higher density but narrower data bus; requires PCB redesign for 36-bit interface | Select when system needs higher capacity and can accommodate fBGA layout and 18-bit data path |
| AS7C33128PFS32 | 128K × 32-bit, 8ns access, 100MHz, 100-pin TQFP - lower density, no burst mode or LBO | Lacks burst addressing and flow-through output; requires external address sequencer for multi-word reads | Select for cost-sensitive, non-burst applications where 128K×32 suffices and latency tolerance >8ns |
Compared with CY7C1373KV18 and AS7C33128PFS32, the 71V67703S75PFGI8 uniquely balances 256K×36 density, 7.5ns flow-through latency, TQFP-100 compatibility, and hardware burst control - making it optimal for legacy-compatible, latency-critical telecom buffers.
Availability
71V67703S75PFGI8 is available at Aetrix Electronics and suitable for packet buffering in network switches, cache memory in baseband processors, and real-time video frame buffering requiring stable component supply across extended product lifecycles.
Supply support for 71V67703S75PFGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power management, and high-performance memory solutions.
The 71V67703S75PFGI8 belongs to IDT's high-speed synchronous SRAM product line, engineered for low-latency, burst-capable memory subsystems in networking, wireless infrastructure, and real-time embedded systems.
FAQ
What is the maximum operating frequency supported by the 71V67703S75PFGI8?
The 71V67703S75PFGI8 supports up to 117MHz clock frequency, corresponding to its 7.5ns access time specification. This is validated across the full industrial temperature range (–40°C to +85°C) with 3.3V ±5% supplies. Operation above 117MHz violates tCYC minimum (8.5ns) and risks timing violations in setup/hold windows.
Does the 71V67703S75PFGI8 support both linear and interleaved burst modes?
Yes, the 71V67703S75PFGI8 supports both burst modes via the LBO pin: LBO=LOW selects linear order (00→01→10→11), and LBO=HIGH selects interleaved order (00→01→11→10). This is confirmed in the Interleaved and Linear Burst Sequence Tables (Tables 14–15) and applies identically to the 71V67703S75PFGI8 in 256K×36 configuration.
What is the function of the ZZ pin on the 71V67703S75PFGI8?
The ZZ pin on the 71V67703S75PFGI8 is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces supply current to ≤70mA (industrial grade) while retaining all stored data. Data retention is guaranteed across the full temperature range, and recovery time (tZZR) is 100ns minimum after ZZ returns LOW.
Can the 71V67703S75PFGI8 be used in a 512K × 18-bit configuration?
No - the 71V67703S75PFGI8 is specifically the 256K × 36-bit variant. The 512K × 18-bit configuration is implemented in the pin-compatible 71V67903 family member. While both share the same package and most control signals, the 71V67703S75PFGI8 uses A0–A17 for addressing (18 bits) and does not decode A18, confirming its fixed 256K×36 organization.
What are the power supply requirements for the 71V67703S75PFGI8?
The 71V67703S75PFGI8 requires two independent 3.3V supplies: VDD (core logic, 3.135–3.465V) and VDDQ (I/O drivers, 3.135–3.465V), each referenced to common VSS. Decoupling capacitors (0.1µF ceramic + 4.7µF tantalum per supply pair) are mandatory per the manufacturer's layout guidelines to maintain signal integrity at 117MHz.
71V67703S75PFGI8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 100-LQFP
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 117 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 7.5 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 100-TQFP (14x14)
71V67703S75PFGI8 FAQ
1.How can I place an order for 71V67703S75PFGI8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S75PFGI8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S75PFGI8 reliable?
The price and inventory of 71V67703S75PFGI8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S75PFGI8 is usually 5 days.
3.What payment methods are accepted for 71V67703S75PFGI8?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S75PFGI8 transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for 71V67703S75PFGI8?
71V67703S75PFGI8 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S75PFGI8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S75PFGI8?
For technical support, including 71V67703S75PFGI8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S75PFGI8 requirements.
6.How does Aetrix verify that 71V67703S75PFGI8 is sourced from the original manufacturer or authorized distributors?
All 71V67703S75PFGI8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S75PFGI8 meets industry standards.
7.What is the process for return or replacement of 71V67703S75PFGI8?
All 71V67703S75PFGI8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S75PFGI8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S75PFGI8 part is unused and in its original packaging.
Return procedure for 71V67703S75PFGI8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S75PFGI8 Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
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24LC01BT-I/OT
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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