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Renesas 71V67703S80BG
- Part No.:
- 71V67703S80BG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67703S80BG.pdf
- Description:
- IC SRAM 9MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:2,442
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Product details
Overview
71V67703S80BG from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and burst-mode operation. It supports 8.0 ns access time at up to 100 MHz clock frequency, features LBO-controlled linear/interleaved burst sequencing, self-timed write with global and byte-level write enables, and operates across industrial temperature range (–40°C to +85°C). It is used in high-bandwidth packet buffering and cache subsystems in telecom line cards.
For engineers reviewing the 71V67703S80BG datasheet, 71V67703S80BG pinout, 71V67703S80BG application, or 71V67703S80BG equivalent, key selection criteria include burst address advance timing (ADV), linear vs. interleaved burst order (LBO), flow-through output latency, ZZ-controlled sleep mode current (IZZ ≤ 70 mA), and compatibility with JEDEC-standard 100-pin TQFP packaging.
Technical Context
The 71V67703S80BG implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs-enabling zero-cycle output latency after clock-to-data delay. Its internal burst counter advances on ADV=LOW and selects sequence order via static LBO input.
Write operations are self-timed and support four modes: global write (GW), byte write enable (BWE) gated by BW1–BW4, and combinations thereof. Power management includes asynchronous ZZ-triggered sleep mode with guaranteed data retention and sub-70 mA full-sleep supply current (IZZ).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via address mapping |
| Access Time / Max Frequency | 8.0 ns access time; supports sustained 100 MHz clock operation |
| Supply Voltages | VDD = 3.3 V ±5% (core); VDDQ = 3.3 V ±5% (I/O); separate power domains |
| Burst Mode | Four-word burst per address; LBO pin selects linear or interleaved sequence |
| Output Architecture | Flow-through (no output register); tCD = 8.0 ns max; single-cycle deselect |
| Power Management | Asynchronous ZZ input enables full sleep mode; IZZ ≤ 70 mA (industrial) |
| Operating Temperature | –40°C to +85°C (industrial grade); validated for continuous operation |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, lead pitch 0.5 mm. Pin 1 marked by corner notch; top-side marking includes "71V67703S80BG" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge with ADSP/ADSC assertion; A0–A17 used for 256K×36 mode |
| CLK | Clock Input | Primary timing reference; all synchronous inputs referenced to rising edge |
| CE, CS0, CS1 | Chip Enable / Selects | Three-input chip select logic: CE LOW + CS0 HIGH + CS1 LOW enables device |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each control one 9-bit byte (I/O0–7/I/OP1, etc.) |
| ADV, LBO, ZZ | Mode Control Inputs | ADV advances burst counter; LBO selects linear/interleaved burst order; ZZ enables low-power sleep asynchronously |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional data bus; flow-through outputs; registered inputs; no internal output register |
| VDD, VDDQ, VSS | Power/Ground | VDD (core), VDDQ (I/O), and VSS pins are segregated; decoupling required per JEDEC layout guidelines |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay; delivers first valid data within tCD = 8.0 ns of CLK rise, critical for low-latency buffering |
| Configurable burst sequencing | LBO pin statically selects linear or interleaved 4-word burst order-enables optimization for cache line or DRAM controller alignment |
| Self-timed write cycle | Internal timing logic resolves write completion without external wait-state generation; simplifies interface to FPGA or ASIC controllers |
| Byte-selectable write granularity | Four independent 9-bit byte write enables (BW1–BW4) allow partial writes without read-modify-write overhead |
| Single-cycle deselect | Device enters high-Z state on next CLK edge after deselection-prevents bus contention during rapid address transitions |
| Asynchronous sleep mode | ZZ HIGH disables internal clock and reduces ICC to ≤70 mA while retaining memory contents-ideal for power-gated subsystems |
Applications
| Telecom Packet Buffering | Network Processor Cache |
|---|---|
|
Use Scenario: Line-card buffers for OC-192/STM-64 packet aggregation where deterministic latency and burst throughput are critical. IC Role / Device Role / Timing Role: High-speed, low-latency SRAM serving as first-level packet buffer between SerDes and traffic manager ASIC. Use Value: Flow-through outputs deliver tCD = 8.0 ns access; 100 MHz burst reads sustain 400 MB/s bandwidth per port-matching OC-192 line rate requirements. |
Use Scenario: Instruction/data cache for multi-threaded network processors handling IPv4/IPv6 forwarding lookups. IC Role / Device Role / Timing Role: Synchronous SRAM providing zero-wait-state instruction fetch and burst-aligned data access to processor core. Use Value: Linear burst mode (LBO = LOW) aligns with 64-byte cache line size; single-cycle deselect prevents pipeline stalls during context switches. |
| Industrial PLC Memory Expansion | Test Equipment Pattern Memory |
|
Use Scenario: Real-time I/O data logging and deterministic control loop storage in ruggedized programmable logic controllers. IC Role / Device Role / Timing Role: Industrial-grade SRAM storing cyclic process data with guaranteed retention under –40°C to +85°C ambient. Use Value: ZZ sleep mode reduces standby power to ≤70 mA during idle cycles; wide-temp qualification ensures reliability in uncontrolled enclosures. |
Use Scenario: High-speed pattern memory in automated test equipment (ATE) generating stimulus vectors for SoC validation. IC Role / Device Role / Timing Role: Burst-capable SRAM feeding parallel test channels with synchronized 100 MHz vector streams. Use Value: Interleaved burst mode (LBO = HIGH) matches ATE sequencer addressing; 8.0 ns access enables >1 Gb/s vector throughput per channel. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-100AXC | 256K × 32-bit; 100 MHz; 100-pin TQFP; no LBO or ADV pins; simpler burst control | Lacks configurable burst order and address advance; limited to fixed sequential burst | Choose when burst flexibility is unnecessary and 32-bit width suffices; lower gate count interface |
| AS7C3256B-10JIN | 256K × 32-bit; 10 ns access; 100-pin TQFP; asynchronous OE; no flow-through or burst mode | No burst capability; asynchronous output enable; higher access latency (tAA = 10 ns) | Choose for cost-sensitive, non-burst applications where flow-through timing is not required |
Compared with CY7C1371BV33-100AXC and AS7C3256B-10JIN, the 71V67703S80BG uniquely delivers flow-through latency, LBO-configurable burst order, and ADV-controlled burst suspension-making it irreplaceable in latency-critical, burst-optimized systems like telecom buffers and network caches.
Availability
71V67703S80BG is available at Aetrix Electronics and suitable for telecom infrastructure, industrial automation, and test equipment applications requiring stable component supply, long-lifecycle support, and industrial temperature compliance.
Supply support for 71V67703S80BG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, designs high-performance timing, memory, and interface ICs for communications, computing, and industrial markets.
The 71V67703S80BG belongs to IDT's high-speed synchronous SRAM product line, engineered specifically for low-latency, burst-intensive applications such as network packet buffering, cache expansion, and real-time control memory.
FAQ
What is the maximum operating frequency supported by the 71V67703S80BG?
The 71V67703S80BG supports up to 100 MHz clock frequency with 8.0 ns access time, verified across the full industrial temperature range (–40°C to +85°C). This frequency is guaranteed with proper signal integrity, termination, and power delivery per the AC Electrical Characteristics table in the official datasheet.
Does the 71V67703S80BG support both linear and interleaved burst modes?
Yes, the 71V67703S80BG supports both burst modes via the LBO (Linear Burst Order) pin: LBO = LOW selects linear sequence; LBO = HIGH selects interleaved sequence. The burst counter advances on ADV = LOW, and the selected mode defines the four-address sequence order for each burst read/write.
How does the flow-through output architecture of the 71V67703S80BG reduce system latency?
The 71V67703S80BG uses a flow-through output path-meaning data propagates directly from the memory array to outputs without passing through a register. This eliminates one clock cycle of latency, delivering valid data within tCD = 8.0 ns of the rising CLK edge, which is essential for real-time buffering and cache applications.
What is the function of the ZZ pin on the 71V67703S80BG, and how does it affect power consumption?
The ZZ pin on the 71V67703S80BG enables asynchronous sleep mode: when driven HIGH, it gates the internal clock and reduces supply current to IZZ ≤ 70 mA (industrial grade) while retaining all stored data. Recovery time tZZR is 100 ns, and the device must be deselected before exiting sleep mode.
Can the 71V67703S80BG perform partial writes, and how is this controlled?
Yes, the 71V67703S80BG supports partial writes using four independent byte write enables (BW1–BW4), each controlling a 9-bit segment of the 36-bit data bus. When BWE = LOW, active BWx signals gate corresponding byte writes; inactive bytes remain unchanged-enabling efficient 8-, 16-, or 24-bit updates without read-modify-write cycles.
71V67703S80BG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67703S80BG FAQ
1.How can I place an order for 71V67703S80BG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S80BG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S80BG reliable?
The price and inventory of 71V67703S80BG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S80BG is usually 5 days.
3.What payment methods are accepted for 71V67703S80BG?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for 71V67703S80BG transactions.
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4.How is shipping managed for 71V67703S80BG?
71V67703S80BG orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S80BG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S80BG?
For technical support, including 71V67703S80BG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S80BG requirements.
6.How does Aetrix verify that 71V67703S80BG is sourced from the original manufacturer or authorized distributors?
All 71V67703S80BG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S80BG meets industry standards.
7.What is the process for return or replacement of 71V67703S80BG?
All 71V67703S80BG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S80BG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S80BG part is unused and in its original packaging.
Return procedure for 71V67703S80BG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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