Renesas 71V67703S80BG8

Overview

71V67703S80BG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and burst-mode capability. It supports 8.0 ns access time at up to 100 MHz clock frequency, operates across industrial temperature range (–40°C to +85°C), and uses JEDEC-standard 119-ball BGA (BG119) package. It is used in high-speed networking buffers and real-time packet processing systems requiring deterministic latency.

For engineers reviewing the 71V67703S80BG8 datasheet, 71V67703S80BG8 pinout, 71V67703S80BG8 application, or 71V67703S80BG8 equivalent, key selection criteria include burst order control via LBO, self-timed write with GW/BWE/BWx granularity, flow-through output timing, ZZ-controlled sleep mode, and compatibility with 3.3V I/O interfaces in telecom and embedded control subsystems.

Technical Context

The 71V67703S80BG8 implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs-enabling predictable tCD = 8.0 ns clock-to-data delay. Its internal burst counter advances on ADV assertion and selects linear or interleaved sequences based on LBO state.

Burst operation initiates on ADSP/ADSC low with CE/CS0/CS1 asserted; subsequent outputs appear on consecutive CLK rising edges without reissuing address. Write cycles support global (GW) or byte-level (BW1–BW4) control, with BWE gating byte enables and OE providing asynchronous output disable.

Key Specifications

Pinout & Package

71V67703S80BG8 is packaged in a JEDEC-standard 119-ball grid array (BG119) with 0.8 mm ball pitch, 12 mm × 12 mm body size, and thermal pad exposed on underside. Pin functions are defined per the BG119 top-view layout in IDT document 5309 drw 02d.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1373KV18 and AS7C3256A, the 71V67703S80BG8 uniquely balances 256K × 36-bit density, 8.0 ns flow-through latency, and industrial-temperature BGA packaging - making it optimal for new designs requiring deterministic burst buffering in space-constrained telecom modules.

Availability

71V67703S80BG8 is available at Aetrix Electronics and suitable for high-speed network buffers, real-time packet processing, and industrial PLC data exchange requiring stable component supply and long-term lifecycle assurance.

Supply support for 71V67703S80BG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power management, and high-performance memory solutions.

The 71V67703S80BG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for deterministic-latency applications in networking, telecommunications, and industrial control where burst-mode throughput and flow-through timing are critical.

FAQ

What is the maximum clock frequency supported by the 71V67703S80BG8?

The 71V67703S80BG8 supports up to 100 MHz clock frequency with guaranteed 8.0 ns access time. This is validated across the industrial temperature range (–40°C to +85°C) and 3.3V ±5% supply conditions. The device achieves this performance using a flow-through output architecture that eliminates output register delay, ensuring tCD remains fixed at 8.0 ns regardless of clock duty cycle or load.

Does the 71V67703S80BG8 support both linear and interleaved burst modes?

Yes, the 71V67703S80BG8 supports both linear and interleaved burst modes via the LBO (Linear Burst Order) input. When LBO = LOW, the device executes linear burst addressing (00→01→10→11). When LBO = HIGH, it executes interleaved burst (00→01→11→10). This static configuration must be set prior to operation and held stable during burst sequences to prevent address counter corruption.

How does the 71V67703S80BG8 handle power-down and sleep mode?

The 71V67703S80BG8 enters low-power sleep mode when ZZ is driven HIGH asynchronously. In this state, internal clock gating reduces supply current to ≤70 mA (industrial grade) while retaining data. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW and the device must be deselected during wake-up. No external reset or initialization sequence is needed post-sleep.

What is the function of the ADV pin on the 71V67703S80BG8?

The ADV (Burst Address Advance) pin controls burst progression on the 71V67703S80BG8. When ADV = LOW on the rising edge of CLK, the internal burst counter increments and delivers the next sequential word. When ADV = HIGH, burst advancement halts - suspending the sequence and holding the current address. This allows precise control over burst length and enables partial-burst reads/writes.

Can the 71V67703S80BG8 be used in systems requiring byte-level write granularity?

Yes, the 71V67703S80BG8 supports true byte-level write control via four independent byte write enables (BW1–BW4), each controlling a 9-bit segment of the 36-bit data bus. When BWE = LOW, active BWx signals gate corresponding byte writes; inactive bytes retain their prior values. This enables atomic updates to status registers or protocol fields without read-modify-write cycles.