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Renesas 71V67703S80BGG
- Part No.:
- 71V67703S80BGG
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67703S80BGG.pdf
- Description:
- IC SRAM 9MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:3,313
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Product details
Overview
71V67703S80BGG from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and 8.0 ns access time at 100 MHz clock frequency. It features burst-mode operation (linear/interleaved), self-timed write with global and byte-level write control, and industrial-grade temperature support (–40°C to +85°C). It is used in high-speed networking buffers, packet-switching ASIC/FPGA interfaces, and real-time DSP memory subsystems.
For engineers reviewing the 71V67703S80BGG datasheet, 71V67703S80BGG pinout, 71V67703S80BGG application, or 71V67703S80BGG equivalent, key selection criteria include burst address sequencing (LBO-controlled), flow-through output timing (tCD = 8.0 ns), 100-pin TQFP package compatibility, and dual-voltage I/O (VDDQ = 3.3 V) for interfacing with 3.3V logic families.
Technical Context
The 71V67703S80BGG implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs - enabling deterministic tCD timing without output register latency. Its internal burst counter advances on ADV assertion and supports four-word bursts per address, with sequence order determined by LBO pin state (linear vs. interleaved).
Write operations are fully synchronous and configurable: global write (GW) enables full 36-bit writes, while BWE and BW1–BW4 allow selective 9-bit byte writes. Power management includes asynchronous ZZ sleep mode (IZZ ≤ 70 mA) and CMOS standby (ISB1 ≤ 70 mA), both compatible with industrial temperature operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-strapping |
| Access Time / Max Clock | 8.0 ns / 100 MHz - guarantees sub-10ns read-to-data timing for high-throughput buffering |
| Core & I/O Voltage | VDD = 3.3 V ±5%, VDDQ = 3.3 V ±5% - enables direct interface with 3.3V FPGA/ASIC I/O banks |
| Burst Mode | Linear or interleaved 4-word burst controlled by LBO pin - eliminates external address generation logic |
| Output Architecture | Flow-through (no output register) - delivers data on same clock edge as address latch, minimizing read latency |
| Power-Down Mode | Asynchronous ZZ input reduces supply current to ≤70 mA - supports low-power idle states in telecom line cards |
| Operating Temperature | –40°C to +85°C - qualified for industrial and telecom infrastructure environments |
Pinout & Package
Packaged in JEDEC-standard 100-pin thin quad flatpack (TQFP), 14 mm × 20 mm body, 0.5 mm pitch. Pin 1 marked by corner notch; top-side marking includes "71V67703S80BGG" and date code.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A18 | Address Inputs | Synchronous address latching on rising CLK edge gated by ADSP/ADSC; A0–A17 used for 256K×36 mode |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge; no internal clock divider |
| GW, BWE, BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE gates BWx; BW1–BW4 each enable one 9-bit byte (I/O0–7/I/OP1, etc.) |
| ADSP / ADSC | Address Status Inputs | ADSP (processor) and ADSC (cache controller) load address register; both active-low, synchronous |
| ADV | Burst Address Advance | Active-low signal that increments internal burst counter; HIGH suspends burst sequence |
| LBO | Burst Order Select | DC-level input selecting linear (LBO = LOW) or interleaved (LBO = HIGH) 4-word burst address sequence |
| OE | Output Enable | Asynchronous control; LOW enables flow-through outputs, HIGH forces high-Z regardless of clock state |
| ZZ | Sleep Mode Input | Asynchronous HIGH disables internal clock and reduces IDD to ≤70 mA; retains data during sleep |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional bus; input path registered, output path flow-through; VDDQ-referenced |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay, delivering valid data within 8.0 ns of CLK rise - critical for zero-wait-state bus designs |
| Single-cycle deselect | Chip deactivation completes in one clock cycle, enabling rapid context switching between memory banks |
| Configurable burst addressing | LBO pin selects linear or interleaved 4-word burst order - matches processor cache line layouts or DMA engine expectations |
| Byte-selectable write capability | Four independent 9-bit write enables (BW1–BW4) allow partial-word updates without read-modify-write overhead |
| Asynchronous sleep entry/exit | ZZ pin triggers immediate power-down without clock synchronization - simplifies power sequencing in multi-SRAM systems |
Applications
| Network Packet Buffering | FPGA-Based Protocol Acceleration |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2/L3 switches before forwarding decisions. IC Role / Device Role / Timing Role: High-bandwidth, low-latency buffer memory interfaced directly to MAC controller or switch fabric ASIC. Use Value: 8.0 ns tCD and flow-through outputs enable frame readout in ≤10 ns, supporting 10 Gbps+ line rates without pipeline stalls. |
Use Scenario: Providing local instruction/data memory for soft-core processors (e.g., MicroBlaze) or custom datapath engines in Xilinx/Intel FPGAs. IC Role / Device Role / Timing Role: Synchronous SRAM acting as tightly coupled memory with deterministic access for real-time processing loops. Use Value: Single-cycle deselect and burst mode reduce effective memory latency by >40% versus non-burst alternatives, improving loop throughput. |
| DSP Co-Processor Memory | Industrial Real-Time Control Buffer |
Use Scenario: Holding filter coefficients and sample buffers for fixed-point FFT or FIR implementations in telecom baseband processing. IC Role / Device Role / Timing Role: Dual-port-capable memory (via time-multiplexed reads/writes) serving as ping-pong buffer for streaming data. Use Value: Byte-write enables (BW1–BW4) allow coefficient updates without disturbing adjacent data, preserving pipeline continuity. |
Use Scenario: Caching sensor fusion data (IMU, encoder, analog inputs) in PLC motion controllers requiring deterministic response under -40°C to +85°C. IC Role / Device Role / Timing Role: Industrial-qualified SRAM providing reliable, jitter-free memory access for safety-critical servo update cycles. Use Value: Guaranteed operation across full industrial temperature range with no derating - eliminates thermal recalibration in field-deployed units. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-100AXC | 256K × 36-bit, 100 MHz, 3.3V, 100-pin TQFP - identical organization and speed grade but Cypress (Infineon) silicon; tCD = 10 ns (slower) | Requires timing margin adjustment in sub-10ns-critical paths; lacks LBO-configurable burst order | Select when legacy Cypress design reuse is prioritized over minimal access time or burst flexibility |
| AS7C3256B-10JCN | 256K × 36-bit, 100 MHz, 3.3V, 100-pin TQFP - Alliance Memory part; tCD = 10 ns, no ZZ sleep mode, only linear burst | No sleep mode support limits power efficiency in always-on embedded gateways; burst inflexibility may require firmware adaptation | Select for cost-sensitive industrial HMI where sleep mode and burst configuration are non-essential |
Compared with CY7C1371BV33-100AXC and AS7C3256B-10JCN, the 71V67703S80BGG delivers superior timing performance (8.0 ns tCD), configurable burst ordering (LBO), and integrated sleep mode (ZZ) - making it optimal for latency-constrained, power-aware telecom and real-time control systems.
Availability
71V67703S80BGG is available at Aetrix Electronics and suitable for high-speed networking equipment, FPGA-based protocol accelerators, and industrial real-time control systems requiring stable component supply, long-term lifecycle assurance, and industrial temperature qualification.
Supply support for 71V67703S80BGG includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
IDT (Integrated Device Technology), now part of Renesas Electronics, is a semiconductor company specializing in high-performance timing, memory, and interface solutions for communications, computing, and industrial markets.
The 71V67703S80BGG belongs to IDT's high-speed synchronous SRAM product line, designed specifically for applications demanding deterministic low-latency memory access, burst efficiency, and robust industrial reliability.
FAQ
What memory organization does the 71V67703S80BGG support?
The 71V67703S80BGG is organized as 256K × 36-bit (9 Mbit) and supports 512K × 18-bit configuration via pin-strapping. In 256K × 36 mode, it uses address pins A0–A17; A18 is NC. This dual-configuration flexibility allows system designers to match bus width requirements without changing PCB layout.
How does the LBO pin affect burst behavior in the 71V67703S80BGG?
The LBO pin on the 71V67703S80BGG selects burst address order: LOW enables linear sequence (00→01→10→11), HIGH enables interleaved (00→01→11→10). This static configuration must be set before operation and cannot change dynamically. The choice aligns with processor cache line mapping or DMA engine expectations to avoid address translation overhead.
What is the significance of flow-through outputs in the 71V67703S80BGG?
Flow-through outputs in the 71V67703S80BGG mean data appears on I/O pins without passing through an output register - resulting in tCD = 8.0 ns (clock-to-data) with no additional clock-cycle delay. This architecture eliminates output register latency, enabling true zero-wait-state operation in high-frequency bus interfaces such as those found in network packet processors.
Can the 71V67703S80BGG operate in industrial temperature conditions?
Yes, the 71V67703S80BGG is qualified for industrial temperature operation from –40°C to +85°C. This rating is explicitly confirmed in the datasheet's Recommended Operating Conditions table and applies to all speed grades including the S80 (8.0 ns) variant. No derating is required across this range for parameters like tCD, IDD, or IZZ.
What power management features does the 71V67703S80BGG provide?
The 71V67703S80BGG provides two power-saving modes: CMOS standby (ISB1 ≤ 70 mA) when deselected, and full sleep mode (IZZ ≤ 70 mA) activated by asserting ZZ HIGH. Sleep mode gates the internal clock and maintains data retention - critical for battery-backed or energy-harvesting industrial nodes where microamp-level quiescent current is not required, but milliamp-level reduction is essential.
71V67703S80BGG Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67703S80BGG FAQ
1.How can I place an order for 71V67703S80BGG through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S80BGG on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S80BGG reliable?
The price and inventory of 71V67703S80BGG are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S80BGG is usually 5 days.
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Once your 71V67703S80BGG order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S80BGG?
For technical support, including 71V67703S80BGG datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S80BGG requirements.
6.How does Aetrix verify that 71V67703S80BGG is sourced from the original manufacturer or authorized distributors?
All 71V67703S80BGG products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S80BGG meets industry standards.
7.What is the process for return or replacement of 71V67703S80BGG?
All 71V67703S80BGG units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S80BGG, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S80BGG part is unused and in its original packaging.
Return procedure for 71V67703S80BGG:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S80BGG Tags
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M24C02-WMN6TP
STMicroelectronics
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AT24C02C-XHM-T
Microchip Technology
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AT21CS01-STUM10-T
Microchip Technology
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AT24C02C-SSHM-T
Microchip Technology
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24LC01BT-I/OT
Microchip Technology
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M24C02-FMC6TG
STMicroelectronics
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AT24CS02-SSHM-T
Microchip Technology
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93LC46BT-I/OT
Microchip Technology
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AT24C04C-SSHM-T
Microchip Technology
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24LC01BT-I/SN
Microchip Technology
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24AA02UIDT-I/OT
Microchip Technology
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AT24C08C-STUM-T
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