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Renesas 71V67703S80BGG8
- Part No.:
- 71V67703S80BGG8
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67703S80BGG8.pdf
- Description:
- IC SRAM 9MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,513
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Product details
Overview
71V67703S80BGG8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and burst-mode operation. It supports 8.0 ns access time at up to 100 MHz clock frequency, features LBO-controlled linear/interleaved burst sequencing, self-timed write with global and byte-level write enables, and operates across industrial temperature range (–40°C to +85°C). It is used in high-bandwidth packet buffering and cache subsystems requiring deterministic timing.
For engineers reviewing the 71V67703S80BGG8 datasheet, 71V67703S80BGG8 pinout, 71V67703S80BGG8 application, or 71V67703S80BGG8 equivalent, key selection criteria include burst address counter behavior, flow-through vs. registered output architecture, ZZ-controlled sleep mode current (≤70 mA), and TQFP/BGA package compatibility for memory subsystem layout.
Technical Context
This SRAM implements a synchronous, clock-driven interface with dual address status inputs (ADSP/ADSC) enabling processor- or cache-controller-initiated bursts. Its internal burst logic uses A0/A1 and LBO to determine four-word sequence order-linear when LBO = LOW, interleaved when LBO = HIGH-and advances on ADV assertion.
The device employs a flow-through output path (no output register), delivering data within tCD ≤ 8.0 ns after CLK rise, while input data is registered on CLK edge. Write control is hierarchical: GW enables full 36-bit writes, BWE gates BW1–BW4 for 9-bit byte writes, and CE/CS0/CS1 provide multi-level chip enable with asynchronous OE and ZZ.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-compatible variant |
| Access Time / Max Frequency | 8.0 ns / 100 MHz - defines minimum clock cycle (tCYC ≥ 10 ns) for synchronous read/write timing compliance |
| Core & I/O Voltage | 3.3 V ±5% (VDD and VDDQ) - requires separate low-noise 3.3V supplies; no voltage translation needed |
| Burst Mode | Four-word burst per address; LBO selects linear or interleaved sequence - eliminates external address generation logic |
| Power-Down Current | IZZ ≤ 70 mA (industrial temp) - achieved via asynchronous ZZ HIGH; retains data with minimal leakage |
| Output Architecture | Flow-through (unregistered) - eliminates output register delay; enables true single-cycle deselect (tOHZ ≤ 3.5 ns) |
| Write Control Granularity | Global (GW) + 4× byte (BW1–BW4) + byte-write-enable (BWE) - allows partial-word updates without masking logic |
Pinout & Package
71V67703S80BGG8 is packaged in a JEDEC-standard 119-ball fine-pitch BGA (BGG119), 14 mm × 20 mm footprint, with 3.3V core (VDD) and I/O (VDDQ) supplies, ground (VSS) planes, and dedicated power/ground ball assignments per datasheet drawing 5309 drw 02d.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge when ADSP or ADSC asserted |
| CLK | Clock Input | Primary timing reference; all synchronous operations referenced to rising edge |
| ADSP / ADSC | Address Status Inputs | Processor- or cache-controller-triggered address load; ADSP gated by CE, ADSC independent |
| ADV | Burst Address Advance | Active-LOW signal that increments internal burst counter; HIGH suspends burst progression |
| LBO | Linear/Interleaved Burst Order | Static DC input selecting burst sequence (LOW = linear, HIGH = interleaved); must not toggle during operation |
| GW / BWE / BW1–BW4 | Write Control Inputs | GW enables full 36-bit write; BWE enables BWx; BW1–BW4 each control one 9-bit byte (I/O0–7+I/OP1, etc.) |
| OE | Output Enable | Asynchronous; drives I/O pins to high-Z when HIGH - enables bus sharing without clock-domain constraints |
| ZZ | Sleep Mode Input | Asynchronous HIGH disables internal clock and reduces supply current to IZZ ≤ 70 mA; retains memory contents |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus; input path registered, output path flow-through |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay, enabling tCD ≤ 8.0 ns and true single-cycle deselect (tOHZ ≤ 3.5 ns) |
| Configurable burst sequencing (LBO) | Hardware-selectable linear or interleaved 4-word burst order - matches CPU/cache address mapping without firmware overhead |
| Self-timed write with multiple enable levels | GW + BWE + BWx hierarchy allows full-word, partial-word, or byte-granularity writes without external timing logic |
| Asynchronous sleep mode (ZZ) | Reduces active current (IDD) to standby (ISB1) or deep-sleep (IZZ) states without clock gating or software intervention |
| Dual address status interface (ADSP/ADSC) | Supports both processor- and cache-controller-initiated bursts - simplifies integration into heterogeneous memory subsystems |
Applications
| Network Packet Buffering | High-Speed Cache Tag RAM |
|---|---|
|
Use Scenario: Storing ingress/egress packet headers and metadata in Layer 2/3 switches with line-rate forwarding. IC Role / Device Role / Timing Role: Synchronous SRAM providing deterministic 8.0 ns read latency and burst-aligned data delivery to packet classification engines. Use Value: Flow-through outputs and single-cycle deselect prevent pipeline stalls during rapid buffer pointer updates; LBO matches TCAM address stride. |
Use Scenario: Holding tag entries and valid bits for multi-way set-associative L1/L2 caches in embedded processors. IC Role / Device Role / Timing Role: Low-latency, burst-capable SRAM serving as tag RAM with parallel access to multiple ways per cycle. Use Value: 100 MHz operation sustains >3.6 Gbps bandwidth; byte-write enables update of individual tag fields without disturbing adjacent entries. |
| Industrial Motion Controller Memory | Test Equipment Pattern Memory |
|
Use Scenario: Buffering real-time position/velocity commands and feedback samples in servo drive FPGA-based controllers. IC Role / Device Role / Timing Role: Deterministic-access SRAM interfacing directly to FPGA fabric for jitter-free command streaming. Use Value: ZZ sleep mode cuts power during idle intervals without losing motion profile data; industrial temp rating ensures reliability in cabinet environments. |
Use Scenario: Storing stimulus/response patterns in automated test equipment (ATE) digital I/O channels. IC Role / Device Role / Timing Role: High-speed pattern memory synchronized to ATE clock domain with precise burst-read alignment. Use Value: 4-word burst mode delivers consecutive test vectors in one address cycle; tCD ≤ 8.0 ns meets sub-10 ns timing margins for 100 MHz pattern rates. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-100BAXI | 256K × 36-bit, 3.3V, 100 MHz, but uses registered outputs (not flow-through); tCD = 9.5 ns | Requires additional clock cycle for output registration; unsuitable where single-cycle deselect is mandatory | Select 71V67703S80BGG8 when flow-through timing and tOHZ ≤ 3.5 ns are required for bus turnaround optimization. |
| AS7C3256B-10JIN | 256K × 36-bit, 3.3V, 10 ns access (100 MHz), but lacks burst mode, LBO, ADV, and ZZ sleep | No hardware burst counter or low-power sleep - demands external logic for burst generation and power management | Choose 71V67703S80BGG8 for integrated burst control and <70 mA sleep current in thermally constrained systems. |
Compared with CY7C1371BV33-100BAXI and AS7C3256B-10JIN, the 71V67703S80BGG8 uniquely combines flow-through outputs, configurable burst sequencing, and asynchronous sleep - reducing FPGA logic utilization and system-level power management complexity.
Availability
71V67703S80BGG8 is available at Aetrix Electronics and suitable for network packet buffering, high-speed cache tag storage, industrial motion control, and ATE pattern memory applications requiring stable component supply and long-term industrial-grade availability.
Supply support for 71V67703S80BGG8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly IDT) is a global semiconductor leader specializing in high-performance memory, timing, and analog solutions for communications, computing, and industrial markets.
The 71V67703S80BGG8 belongs to IDT's high-speed synchronous SRAM product line, designed specifically for deterministic-latency memory subsystems in networking, test equipment, and real-time control applications.
FAQ
What is the maximum operating frequency supported by the 71V67703S80BGG8?
The 71V67703S80BGG8 supports up to 100 MHz clock frequency, corresponding to an 8.0 ns access time (tCD) and 10 ns minimum clock cycle (tCYC). This is guaranteed across the industrial temperature range (–40°C to +85°C) with 3.3V ±5% supplies. The device achieves this performance using a flow-through output architecture and optimized CMOS process.
Does the 71V67703S80BGG8 support burst-mode operation, and how is it configured?
Yes, the 71V67703S80BGG8 supports four-word synchronous burst mode initiated by ADSP or ADSC. Burst sequence order is selected via the LBO pin: LOW enables linear addressing (00→01→10→11), HIGH enables interleaved (00→01→11→10). The internal counter advances on each ADV LOW pulse, and burst suspension is possible by holding ADV HIGH.
What is the function of the ZZ pin on the 71V67703S80BGG8, and what power savings does it provide?
The ZZ pin on the 71V67703S80BGG8 is an asynchronous sleep mode input. When driven HIGH, it gates the internal clock and reduces supply current to IZZ ≤ 70 mA (industrial grade), while retaining all stored data. This enables rapid entry/exit from low-power state without reset or reinitialization - critical for duty-cycled applications like motion control buffers.
How does the 71V67703S80BGG8 handle partial-word writes, and what pins control them?
The 71V67703S80BGG8 supports partial-word writes via a hierarchical control scheme: Global Write (GW) enables full 36-bit writes; Byte Write Enable (BWE) gates four individual byte write signals (BW1–BW4), each controlling a 9-bit segment (e.g., BW1 → I/O0–7 + I/OP1). All outputs are disabled during any active byte write, ensuring bus integrity.
Is the 71V67703S80BGG8 pin-compatible with other members of the 71V67703/71V67903 family?
Yes, the 71V67703S80BGG8 shares identical pinout and package (BGG119) with the 71V67903 (512K × 18-bit variant), differing only in internal memory organization and certain NC/BW pin assignments. Pin compatibility enables footprint reuse across density options, though design validation is required for address decoding and burst behavior alignment.
71V67703S80BGG8 Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- 0°C ~ 70°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67703S80BGG8 FAQ
1.How can I place an order for 71V67703S80BGG8 through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S80BGG8 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S80BGG8 reliable?
The price and inventory of 71V67703S80BGG8 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S80BGG8 is usually 5 days.
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Once your 71V67703S80BGG8 order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S80BGG8?
For technical support, including 71V67703S80BGG8 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S80BGG8 requirements.
6.How does Aetrix verify that 71V67703S80BGG8 is sourced from the original manufacturer or authorized distributors?
All 71V67703S80BGG8 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S80BGG8 meets industry standards.
7.What is the process for return or replacement of 71V67703S80BGG8?
All 71V67703S80BGG8 units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S80BGG8, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S80BGG8 part is unused and in its original packaging.
Return procedure for 71V67703S80BGG8:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S80BGG8 Tags
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M24C02-WMN6TP
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