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Renesas 71V67703S80BGGI
- Part No.:
- 71V67703S80BGGI
- Manufacturer:
- Renesas
- Category:
- Memory
- Package:
- 119-BGA
- Datasheet:
-
71V67703S80BGGI.pdf
- Description:
- IC SRAM 9MBIT PAR 119PBGA
- Quantity:
- Payment:
- Shipping:
Inventory:1,199
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Product details
Overview
71V67703S80BGGI from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and burst-mode operation. It supports 8.0 ns access time at up to 100 MHz clock frequency, operates across industrial temperature range (–40°C to +85°C), and uses JEDEC-standard 119-ball BGA (BGG) package. It is used in high-speed networking buffers and real-time DSP data caching.
For engineers reviewing the 71V67703S80BGGI datasheet, 71V67703S80BGGI pinout, 71V67703S80BGGI application, or 71V67703S80BGGI equivalent, key selection criteria include burst-order control (LBO), self-timed write with byte-level granularity (BW1–BW4), flow-through output timing, ZZ sleep mode entry, and compatibility with 3.3V I/O systems requiring deterministic read latency.
Technical Context
The 71V67703S80BGGI implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) data outputs-enabling predictable tCD = 8.0 ns clock-to-data delay. Its internal burst counter advances on ADV assertion and selects linear or interleaved sequences via LBO, supporting four-word bursts per address.
Write operations are controlled synchronously via GW (global), BWE (byte write enable), and BW1–BW4 (per-byte enables), allowing partial writes without bus contention. Power management includes asynchronous ZZ input for full-sleep mode (IZZ ≤ 70 µA), and CE/CS0/CS1 decoding supports multi-chip memory banking.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Memory Organization | 256K × 36-bit (9Mbit); supports 512K × 18-bit via pin-strapping - enables flexible data bus width matching. |
| Access Time | 8.0 ns max at 100 MHz clock - guarantees sub-10 ns deterministic read latency for real-time control loops. |
| Supply Voltages | VDD = 3.3 V ±5% (core), VDDQ = 3.3 V ±5% (I/O) - eliminates level-shifting in 3.3V system designs. |
| Burst Mode | Linear or interleaved 4-word burst via LBO pin - reduces address bus traffic by 75% during sequential accesses. |
| Power-Down Current | IZZ ≤ 70 µA in full sleep mode (ZZ = HIGH) - enables low-power standby in battery-backed or energy-sensitive systems. |
| Operating Temperature | –40°C to +85°C industrial grade - qualified for deployment in telecom infrastructure and industrial PLCs. |
| Package | 119-ball fine-pitch BGA (BGG), 12 mm × 12 mm - provides high I/O density and thermal performance for compact PCB layouts. |
Pinout & Package
71V67703S80BGGI is packaged in a JEDEC-standard 119-ball fine-pitch ball grid array (BGG119), 12 mm × 12 mm body, 0.8 mm ball pitch, with exposed thermal pad. Pinout conforms to BG119 layout for 256K × 36 configuration as documented in IDT datasheet revision 6.42, Figure 02c.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| A0–A17 | Address Inputs | 18-bit synchronous address bus; latched on rising CLK edge with ADSP/ADSC assertion - defines 256K word depth. |
| CLK | System Clock Input | Primary timing reference; all synchronous inputs sampled on rising edge - enables precise 100 MHz operation. |
| GW, BWE, BW1–BW4 | Write Control Inputs | Global/byte write enables; BW1–BW4 select 9-bit I/O groups (I/O0–7+I/OP1, etc.) - allows 8-bit, 16-bit, or 32-bit partial writes. |
| LBO | Burst Order Select | Asynchronous static input; LOW = linear burst, HIGH = interleaved - determines address sequence for burst reads/writes. |
| ZZ | Sleep Mode Enable | Asynchronous HIGH-active input; gates internal clock and reduces ICC to ≤70 µA - enables instant low-power state entry. |
| I/O0–I/O31, I/OP1–I/OP4 | Data I/O | 36-bit bidirectional synchronous data bus; flow-through outputs eliminate output register delay - ensures tCD = 8.0 ns. |
Key Features
| Feature | Design Value |
|---|---|
| Flow-through output architecture | Eliminates output register delay, delivering data within 8.0 ns of CLK rise - critical for cycle-accurate timing in FPGA co-processors. |
| Self-timed write cycle | Internal write completion detection removes external timing constraints - simplifies interface logic and improves reliability under voltage/temp variation. |
| Single-cycle deselect | Chip deactivation completes in one clock cycle - enables rapid bank switching in multi-SRAM memory subsystems. |
| Configurable burst order (LBO) | Hardware-selectable linear or interleaved addressing - matches cache line layouts in MIPS/PowerPC-based systems. |
| Industrial temperature qualification | Guaranteed operation from –40°C to +85°C - supports deployment in base station RF modules and motor drive controllers. |
Applications
| High-Speed Network Packet Buffer | DSP Data Cache for Real-Time Control |
|---|---|
Use Scenario: Storing ingress/egress Ethernet frames in Layer 2 switches before forwarding decisions. IC Role / Device Role / Timing Role: Synchronous SRAM buffer providing deterministic 8.0 ns read access and burst writes to match 100 MHz MAC interface timing. Use Value: Enables zero-latency frame queuing with no pipeline stalls, supporting wire-speed 1 Gbps throughput. | Use Scenario: Holding coefficient tables and intermediate results in motor control DSPs executing 20 kHz PWM loops. IC Role / Device Role / Timing Role: Low-latency data scratchpad with flow-through outputs ensuring sample-to-output delay remains fixed at 8.0 ns. Use Value: Guarantees jitter-free execution of PID calculations, eliminating timing uncertainty that could cause torque ripple. |
| Telecom Line Card Control Memory | Industrial PLC Program Storage |
Use Scenario: Storing configuration registers and status flags for multi-port T1/E1 framer ICs in carrier-grade line cards. IC Role / Device Role / Timing Role: Industrial-grade SRAM interfacing directly to framer parallel bus with CE/CS0/CS1 decode for multi-device mapping. Use Value: Supports hot-swap firmware updates and runtime reconfiguration without memory corruption across –40°C to +85°C. | Use Scenario: Holding ladder logic scan buffers and I/O image tables in programmable logic controllers deployed in factory automation cabinets. IC Role / Device Role / Timing Role: Burst-capable SRAM enabling full 36-bit I/O image update in four clock cycles per scan cycle. Use Value: Reduces scan time by 75% versus discrete addressing, improving PLC cycle time from 10 ms to ≤2.5 ms. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar synchronous SRAM applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| CY7C1371BV33-100AXC | 256K × 36, 100 MHz, 100-pin TQFP; no LBO pin; fixed linear burst only. | Lacks interleaved burst mode and BGA packaging - unsuitable for space-constrained or cache-coherent designs. | Select when board layout uses TQFP and burst order flexibility is unnecessary. |
| AS7C33256P-10BIN | 256K × 36, 10 ns access, 119-ball BGA; no ZZ sleep mode; commercial temp only (0°C to +70°C). | Higher access time (10 ns vs. 8 ns) and no industrial temp rating - limits use in outdoor or high-ambient environments. | Select for cost-sensitive commercial applications where sleep mode and extended temperature are not required. |
Compared with CY7C1371BV33-100AXC and AS7C33256P-10BIN, the 71V67703S80BGGI uniquely combines industrial temperature operation, 8.0 ns access, configurable burst order, and full-sleep mode in a 119-ball BGA - making it optimal for thermally demanding, latency-critical embedded systems.
Availability
71V67703S80BGGI is available at Aetrix Electronics and suitable for high-speed network packet buffering, real-time DSP data caching, and industrial PLC program storage requiring stable component supply over extended production lifecycles.
Supply support for 71V67703S80BGGI includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Renesas Electronics (formerly Integrated Device Technology) is a global semiconductor leader specializing in microcontrollers, analog, power management, and high-performance memory solutions.
The 71V67703S80BGGI belongs to IDT's high-speed synchronous SRAM product line, designed specifically for latency-sensitive embedded systems requiring deterministic burst access, low-power sleep states, and industrial-grade reliability.
FAQ
What is the maximum clock frequency supported by the 71V67703S80BGGI?
The 71V67703S80BGGI supports up to 100 MHz clock frequency with guaranteed 8.0 ns access time. This is validated across the full industrial temperature range (–40°C to +85°C) and under worst-case voltage conditions (VDD = 3.135 V). The device meets tCYC ≥ 10 ns and tCH/tCL ≥ 4 ns specifications at this speed.
Does the 71V67703S80BGGI support both linear and interleaved burst modes?
Yes, the 71V67703S80BGGI supports both linear and interleaved burst modes via the LBO (Linear/Interleaved Burst Order) pin. When LBO = LOW, linear addressing is used; when LBO = HIGH, interleaved addressing is selected. This hardware-selectable feature is static and must remain stable during operation.
What is the function of the ZZ pin on the 71V67703S80BGGI?
The ZZ pin on the 71V67703S80BGGI is an asynchronous active-HIGH sleep mode enable. When asserted, it gates the internal clock and reduces supply current to ≤70 µA (IZZ), preserving data while minimizing power. Recovery requires tZZR ≥ 100 ns after ZZ returns LOW and device reselection.
How many byte-write enable signals does the 71V67703S80BGGI provide?
The 71V67703S80BGGI provides four individual byte-write enable signals: BW1, BW2, BW3, and BW4. Each controls a 9-bit segment of the 36-bit data bus (e.g., BW1 → I/O0–I/O7 + I/OP1). These operate synchronously with CLK and require BWE = LOW to be active.
Is the 71V67703S80BGGI compatible with 5V-tolerant systems?
No, the 71V67703S80BGGI is strictly a 3.3V device: VDD and VDDQ are specified at 3.3V ±5%. Input voltages must not exceed VDD +0.3 V (VIH max) or go below –0.3 V (VIL min). Direct interface with 5V logic requires level translation; it is not 5V-tolerant.
71V67703S80BGGI Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Renesas
- Series:
- -
- Package/Case:
- 119-BGA
- Packaging:
- Tray
- Product Status:
- Obsolete
- Programmable:
- Not Verified
- Memory Type:
- Volatile
- Memory Format:
- SRAM
- Technology:
- SRAM - Synchronous, SDR
- Memory Size:
- 9Mbit
- Memory Organization:
- 256K x 36
- Memory Interface:
- Parallel
- Clock Frequency:
- 100 MHz
- Write Cycle Time - Word, Page:
- -
- Access Time:
- 8 ns
- Voltage - Supply:
- 3.135V ~ 3.465V
- Operating Temperature:
- -40°C ~ 85°C (TA)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- 119-PBGA (14x22)
71V67703S80BGGI FAQ
1.How can I place an order for 71V67703S80BGGI through Aetrix?
Please submit a Request for Quotation (RFQ) for 71V67703S80BGGI on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for 71V67703S80BGGI reliable?
The price and inventory of 71V67703S80BGGI are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for 71V67703S80BGGI is usually 5 days.
3.What payment methods are accepted for 71V67703S80BGGI?
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71V67703S80BGGI orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your 71V67703S80BGGI order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for 71V67703S80BGGI?
For technical support, including 71V67703S80BGGI datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your 71V67703S80BGGI requirements.
6.How does Aetrix verify that 71V67703S80BGGI is sourced from the original manufacturer or authorized distributors?
All 71V67703S80BGGI products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that 71V67703S80BGGI meets industry standards.
7.What is the process for return or replacement of 71V67703S80BGGI?
All 71V67703S80BGGI units undergo pre-shipment inspection (PSI). If there is an issue with 71V67703S80BGGI, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The 71V67703S80BGGI part is unused and in its original packaging.
Return procedure for 71V67703S80BGGI:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
71V67703S80BGGI Tags
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