Renesas 71V67703S80BGGI8

Overview

71V67703S80BGGI8 from IDT (now Renesas) is a 256K × 36-bit, 3.3V synchronous SRAM with flow-through outputs, single-cycle deselect, and linear/interleaved burst mode. It delivers 8.0 ns access time at up to 100 MHz clock frequency, supports byte-write and global-write control, and operates across industrial temperature range (–40°C to +85°C). Used in high-speed networking buffers and real-time DSP data caching.

For engineers reviewing the 71V67703S80BGGI8 datasheet, 71V67703S80BGGI8 pinout, 71V67703S80BGGI8 application, or 71V67703S80BGGI8 equivalent, key selection criteria include burst address sequencing (LBO-controlled), ZZ sleep-mode current (≤70 mA), flow-through output timing (tCD = 8.0 ns), and 119-ball BGA (BGG) package compatibility with JEDEC MO-270AB.

Technical Context

This SRAM implements a synchronous, clock-driven architecture with registered address, control, and data inputs, but unregistered (flow-through) outputs - enabling deterministic tCD timing without output register latency. Burst operation is initiated by ADSP/ADSC and advanced via ADV, with internal binary counter generating four consecutive addresses per burst.

The device supports two memory configurations (256K × 36 or 512K × 18) via pin-strapping and package variant; the 71V67703S80BGGI8 is specifically the 256K × 36 version in 119-ball BGA (BGG119) package. LBO selects linear vs. interleaved burst order, while ZZ enables full-sleep mode with ≤70 mA ISB2 current.

Key Specifications

Pinout & Package

71V67703S80BGGI8 is packaged in a 119-ball fine-pitch BGA (BGG119) per JEDEC MO-270AB, with 12 mm × 12 mm body size and 1.0 mm ball pitch. Pinout follows the 256K × 36 configuration as defined in IDT document 5309 drw 02c.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar synchronous SRAM applications.

Compared with CY7C1373KV18 and AS7C3256B, the 71V67703S80BGGI8 uniquely combines 256K × 36 density, LBO-configurable burst, flow-through timing, and industrial-grade sleep mode - making it optimal for high-throughput, low-latency, thermally demanding embedded data buffering.

Availability

71V67703S80BGGI8 is available at Aetrix Electronics and suitable for high-speed network packet buffering, DSP data caching, industrial PLC I/O exchange, and radar signal processing requiring stable component supply and long-term industrial temperature support.

Supply support for 71V67703S80BGGI8 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Renesas Electronics (formerly Integrated Device Technology, IDT) is a global semiconductor leader specializing in high-performance memory, timing, and connectivity solutions for infrastructure and industrial markets.

The 71V67703S80BGGI8 belongs to IDT's high-speed synchronous SRAM product line, engineered for deterministic low-latency data buffering in telecom, test equipment, and real-time control systems where flow-through timing and burst efficiency are critical.

FAQ

What is the exact memory organization and density of the 71V67703S80BGGI8?

The 71V67703S80BGGI8 is organized as 256K × 36 bits, delivering 9,216,000 bits (9 Mbit) of total storage. It is specifically the 256K × 36 variant of the IDT71V67703/7903 family and is not configurable to 512K × 18 in this package and speed grade. The BGG119 package pins out the full 36-bit data bus (I/O0–I/O31 + I/OP1–I/OP4) and 18 address lines (A0–A17).

Does the 71V67703S80BGGI8 support both linear and interleaved burst modes, and how is it controlled?

Yes, the 71V67703S80BGGI8 supports both linear and interleaved burst modes via the LBO (Linear Burst Order) pin. When LBO is driven LOW, the device executes linear burst (00→01→10→11); when HIGH, it executes interleaved burst (00→01→11→10). LBO is an asynchronous static input and must remain stable during burst operation - changing it mid-burst may cause undefined address sequencing in the 71V67703S80BGGI8.

What is the function of the ZZ pin on the 71V67703S80BGGI8, and what power savings does it provide?

The ZZ pin on the 71V67703S80BGGI8 is an asynchronous sleep mode enable. When driven HIGH, it gates the internal clock and places the device in full sleep mode, reducing supply current to ≤70 mA (ISB2) under industrial conditions. This allows the 71V67703S80BGGI8 to maintain data retention while minimizing system-level standby power - critical for fanless industrial controllers and remote sensing nodes.

How does the flow-through output architecture of the 71V67703S80BGGI8 affect timing compared to registered-output SRAMs?

The 71V67703S80BGGI8 uses a flow-through (unregistered) output path, meaning data appears at the I/O pins with tCD = 8.0 ns after the rising CLK edge - purely array-to-pin propagation with no additional register delay. In contrast, registered-output SRAMs add ≥1 ns of output register latency. This makes the 71V67703S80BGGI8 ideal for applications requiring strict read-to-read timing closure, such as high-frequency packet inspection engines.

Is the 71V67703S80BGGI8 pin-compatible with other members of the IDT71V67703/7903 family, such as the 71V67903?

No, the 71V67703S80BGGI8 is not pin-compatible with the 71V67903. While both share the same BGG119 package outline, the 71V67903 is a 512K × 18 device with different address and data pin assignments (e.g., A18 used, no BW3/BW4). The 71V67703S80BGGI8's 256K × 36 configuration requires distinct pin mapping - confirmed in IDT doc 5309 drw 02c vs. drw 02d - and substituting either part without PCB revision will result in functional failure.